Philips XSA5223CU, XSA5223CK Datasheet

Philips Semiconductors
SA5223
Wide dynamic range AGC transimpedance amplifier (150MHz)
Product specification 1995 Oct 24
INTEGRATED CIRCUITS
IC19 Data Handbook
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
2
1995 Oct 24 853-1816 15939
DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier with differential outputs, incorporating AGC and optimized for signal recovery in wide-dynamic-range fiber optic receivers, such as SONET. The part is also suited for many other RF and fiber optic applications as a general purpose gain block.
The SA5223 is the first AGC amplifier to incorporate internal AGC loop hold capacitor, therefore, no external components are required. The internal AGC loop enables the SA5223 to effortlessly handle bursty data over a range of nA to mA of signal current, positive direction (sinking) only.
FEA TURES
Extremely low noise:
1.17pA
ń
Hz
Ǹ
Single 5V supply
Low supply current: 22mA
Large bandwidth: 150MHz
Differential outputs
Internal hold capacitor
Low input/output impedances
High power-supply-rejection ratio: 55dB
Tight transresistance control
High input overload: 4mA
2000V HBM ESD protection
PIN DESCRIPTION
D Package
IN
GND
2
OUT
V
CC
1
2
3
4
8
7
6
5
OUT
GND
4
GND
3
GND
1
SD00369
APPLICATIONS
OC3 SONET preamp (see AN1431 for detailed analysis
Current-to-voltage converters
Wide-band gain block
Medical and scientific instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline
-40 to +85°C
SA5223D SOT96-1
For unpackaged die please contact factory.
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
Power supply voltage 6 V
T
A
Ambient temperature range -40 to +85
°C
T
J
Junction temperature range -55 to +150
°C
T
STG
Storage temperature range -65 to +150
°C
P
D
Power dissipation TA = 25oC (still air)
1
0.78 W
I
INMAX
Maximum input current 5 mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ
JA
= 158oC/W. Derate
6.2mW/
°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
Power supply voltage 4.5 to 5.5 V
T
A
Ambient temperature range: SA grade -40 to +85
°C
T
J
Junction temperature range: SA grade -40 to +105
°C
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
3
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C, and VCC = +5V, unless otherwise specified.
SA5223
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
V
IN
Input bias voltage 1.3 1.55 1.8 V
V
O
±
Output bias voltage 2.9 3.2 3.5 V
V
OS
Output offset voltage (V
PIN6
- V
PIN7
) -200 80 +200 mV
I
CC
Supply current 15 22 29 mA
I
OMAX
Output sink/source current 1.5 2 mA
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C and VCC = +5V, unless otherwise specified.
SA5223
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
R
T
Transresistance (differential output)
DC tested, RL = , IIN = 0-1µA
90 125 160 k
R
T
Transresistance (single-ended output)
DC tested, RL = , IIN = 0-1µA
45 62.5 80 k
R
O
Output resistance (differential output)
DC tested 140
R
O
Output resistance (single-ended output)
DC tested 70
f
3dB
Bandwidth (-3dB) Test Circuit 1 110 150 MHz
R
IN
Input resistance DC tested 250
C
IN
Input capacitance
1
0.7
pF
C
INT
Input capacitance including Miller multiplied capacitance
4.0
pF
R/V Transresistance power supply sensitivity V
CC1
= V
CC2
= 5 ±0.5V 3 %/V
R/T
Transresistance ambient temperature sensi­tivity
TA = T
A MAX
- T
A MIN
0.09
%/oC
I
IN
RMS noise current spectral density (referred to input)
2
Test Circuit 2, f = 10MHz 1.17
pAń Hz
Ǹ
Integrated RMS noise current over the band-
Test circuit 2,
f = 50MHz
7
w
idth (ref
erred to inpu
t)
=
p
f = 100MHz 12
I
T
C
S
= 0.
1F
f = 150MHz 16
nA
T
f = 50MHz 8
CS = 0.4pF f = 100MHz 13
f = 150MHz 18 PSRR Power supply rejection ratio (change in VOS) DC Tested, ∆VCC = ±0.5V –55 dB PSRR Power supply rejection ratio
3
f = 1.0MHz, Test Circuit 3 –20 dB
V
OLMAX
Maximum differential output AC voltage Ii = 0–2mA peak AC 800 mV
dR
T
dt
AGC loop time constant parameter
4
10µA to 20µA steps 1 dB/ms
I
INMAX
Maximum input amplitude for output duty cycle of 50 ±5%
Test circuit 4 +2 mA
tr, tfOutput rise and fall times 10 – 90% 2.2 ns
t
D
Group delay f = 10MHz 2.2 ns
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line.
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit Error Rate (BER) for 100,000 cycles at 100MHz).
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
4
TEST CIRCUITS
Test Circuit 1: Bandwidth
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
V
CC
.1uF
.1uF
50
Z
O
= 50
OUT
OUT
IN DUT
0.1uF
R=1k
50
GND
1
SINGLE-ENDED
GND
2
R
TSE
+ 12.4 @ S21@ RIN,RIN+ 1k ) R
INSS
[ 1250W
Z
O
= 50
SD00370
500
500
Test Circuit 2: Noise
SPECTRUM ANALYZER
V
CC
OUT
OUT
IN DUT
GND
2
GND
1
NE5209
50
.1µF
.1µF
1.0µF
1.0µF
C
S
50
SD00371
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
V
CC
.1uF
.1uF
OUT
OUT
IN DUT
GND
2
GND
1
50
CAL
UNBAL.
0.1uF
NC
50
BIAS TEE
5V
NHO300HB
TRANSFORMER
CONVERSION
LOSS = 9dB
100 BAL.
SD00372
Test Circuit 3: PSRR
Test Circuit 4: Duty Cycle Distortion
PULSE GEN
OUT
OUT
DUT
OSCILLOSCOPE
A
B
Meaurement done using differential wave forms
5V
0.1uF
.1µF
.1µF
GND
1
GND
2
ZO = 50
Z
O
= 50
IN
500
500
1k
50
OFFSET
SD00373
50% DUTY CYCLE
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