Philips US1series Datasheet
DATA SH EET
Product specification 2000 Feb 14
DISCRETE SEMICONDUCTORS
US1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
ook, halfpage
M3D168
2000 Feb 14 2
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
US1 series
FEATURES
• Glass passivated
• High maximum operating temperature
• Ideal for surface mount automotive applications
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• UL 94V-O classified plastic package
• Shipped in 12 mm embossed tape
• Marking: cathode, date code, type code
• Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic.The small rectangular package has
two J bent leads.
lumns
MSA474
Top view Side view
cathode
band
ka
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
US1A − 50 V
US1B − 100 V
US1D − 200 V
US1G − 400 V
US1J − 600 V
V
R
continuous reverse voltage
US1A − 50 V
US1B − 100 V
US1D − 200 V
US1G − 400 V
US1J − 600 V
V
RMS
root mean square voltage
US1A − 35 V
US1B − 70 V
US1D − 140 V
US1G − 280 V
US1J − 420 V
I
F(AV)
average forward current averaged over any 20 ms period;
Ttp= 110 °C; see Fig.2
− 1A
2000 Feb 14 3
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
US1 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al
2O3
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the
‘General Part of associated Handbook’
.
I
FSM
non-repetitive peak forward current t = 8.3 ms half sine wave;
Tj=25°C prior to surge;
VR=V
RRMmax
− 25 A
T
stg
storage temperature −65 +175 °C
T
j
junction temperature See Fig.3 −65 +175 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage IF=1A;
US1A to US1G see Fig.4 − 1.1 V
US1J see Fig.5 − 1.4 V
I
R
reverse current VR=V
RRMmax
; see Figs 6 and 7 − 10 µA
V
R=VRRMmax
; Tj= 165 °C; see Figs 6 and 7 − 50 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.12
− 50 ns
C
d
diode capacitance VR= 4 V; f = 1 MHz;
US1A to US1G see Fig.8 14 − pF
US1J see Fig.9 10 − pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point; see Fig.10 27 K/W
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
2000 Feb 14 4
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
US1 series
GRAPHICAL DATA
handbook, halfpage
0 40 200
2
1.5
0.5
0
1
80
Ttp (°C)
I
F(AV)
(A)
120 160
MCD822
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
VR=V
RRMmax
; δ = 0.5; a = 1.57.
handbook, halfpage
0 100
VR (%V
Rmax
)
T
j
(°C)
200
0
100
50
MBK455
Device mounted as shown in Fig.11.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.
Fig.3 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
32
VF (V)
I
F
(A)
10
MCD792
10
2
10
1
10
−1
10
−2
10
−3
US1A to G
Tj=25°C.
Fig.4 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
42
I
F
(A)
VF (V)
103
MCD793
10
2
10
1
10
−1
10
−2
10
−3
US1J
Tj=25°C.
Fig.5 Forward current as a function of forward
voltage; typical values.
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