Philips UMA1018M Datasheet

INTEGRATED CIRCUITS

DATA SH EET

UMA1018M

Low-voltage dual frequency synthesizer for radio telephones

Product speciﬁcation Supersedes data of November 1994 File under Integrated Circuits, IC03

1995 Jun 27

Philips Semiconductors Product speciﬁcation

Low-voltage dual frequency synthesizer for radio telephones

FEATURES

• Low current from 3 V supply

• Fully programmable RF divider

• 3-line serial interface bus

• Second synthesizer to control first IF or offset loop

frequency

• Independent fully programmable reference dividers for each loop, driven from external crystal oscillator

• Dual phase detector outputs to allow fast frequency switching

• Integrated digital-to-analog converter

• Dual power-down modes.

APPLICATIONS

• 900 MHz mobile telephones

• Portable battery-powered radio equipment.

GENERAL DESCRIPTION

The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies.

UMA1018M

The principal synthesizer operates at RF input frequencies up to1.25 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the first IF or to transmit offset loop-frequency settings. Each synthesizer has a fully programmable reference divider. All divider ratios are supplied via a 3-wire serial programming bus.

Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing damage. Digital supplies

and V

DD1

must be equal to or greater than VDD (i.e. VDD= 3 V and VCC= 5 V for wider tuning range).

The principal synthesizer phase detector uses two charge pumps, one provides normal loop feedback, while the other is only active during fast mode to speed-up switching. The auxiliary loop has a separate phase detector. All charge pump currents (gain) are fixed by an external resistance at pin I filters are used; the charge-pumps function within a wide voltage compliance range to improve the overall system performance. An on-chip 7-bit DAC enables adjustment of an external function, such as the temperature compensation of a crystal oscillator in Global System for Mobile communications (GSM).

must also be at the same potential. V

DD2

(pin 14). Only passive loop

SET

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

, V

CC+IDD

supply voltage VCC≥ V

principal synthesizer supply current auxiliary synthesizer in

2.7 − 5.5 V

− 7.7 − mA

power-down mode

, I

CCPD

VCO

XTAL

PPC

APC

amb

principal and auxiliary synthesizer supply current

current in power-down mode per supply − 12 −µA

DDPD

principal input frequency 50 − 1250 MHz auxiliary input frequency 20 − 300 MHz crystal reference input frequency 3 − 40 MHz principal phase comparator frequency − 200 − kHz auxiliary phase comparator frequency − 200 − kHz operating ambient temperature −30 − +85 °C

principal and auxiliary synthesizers ON

− 10 − mA

1995 Jun 27 2

Philips Semiconductors Product speciﬁcation

Low-voltage dual frequency

UMA1018M

synthesizer for radio telephones

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

UMA1018M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

BLOCK DIAGRAM

PACKAGE

Fig.1 Block diagram.

1995 Jun 27 3

Philips Semiconductors Product speciﬁcation

Low-voltage dual frequency synthesizer for radio telephones

PINNING

SYMBOL PIN DESCRIPTION

FAST 1 control input to speed-up main

synthesizer

CPPF 2 principal synthesizer speed-up

charge-pump output

CPP 3 principal synthesizer normal

charge-pump output

DD1

DD2

PRI 6 1 GHz principal synthesizer

DGND 7 digital ground f

XTAL

PON 9 principal synthesizer power-on input DOUT 10 7-bit digital-to-analog output CLK 11 Programming bus clock input DATA 12 programming bus data input E 13 programming bus enable input

SET

AUX 15 auxiliary synthesizer frequency input AGND 16 analog ground CPA 17 auxiliary synthesizer charge-pump

AON 19 auxiliary synthesizer power-on input LOCK 20 in-lock detect output (main PLL);

4 digital power supply 1 5 digital power supply 2

frequency input

8 common crystal frequency input from

TCXO

(active LOW)

14 regulator pin to set the charge-pump

currents

output

18 supply for charge-pump and DAC

circuits

test mode output

UMA1018M

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION Principal synthesizer

Programmable reference and main dividers drive the principal PLL phase detector. Two charge pumps produce phase error current pulses for integration in an external loop filter. A hardwired power-down input PON (pin 9) ensures that the dividers and phase comparator circuits can be disabled.

The PRI input (pin 6) drives a pre-amplifier to provide the clock to the first divider stage. The pre-amplifier has a high input impedance, dominated by pin and pad capacitance. The circuit operates with signal levels from 50 mV up to

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225 mV (RMS), and at frequencies as high as 1.25 GHz. The high frequency divider circuits use bipolar transistors, slower bits are CMOS. Divider ratios (512 to 131071) allow a 1 MHz phase comparison with a 500 MHz RF input, and a 10 kHz phase comparison with a 1.25 GHz RF input.

The reference and main divider outputs are connected to a phase/frequency detector that controls two charge pumps. The two pumps have a common bias-setting current that is set by an external resistance. The ratio between currents in fast and normal operating modes can be programmed via the 3-wire serial bus. The low current pump remains active except in power-down.

Philips Semiconductors Product speciﬁcation

Low-voltage dual frequency synthesizer for radio telephones

The high current pump is enabled via the control input FAST (pin 1). By appropriate connection to the loop filter, dual bandwidth loops are provided: short time constant during frequency switching (FAST mode) to speed-up channel changes and low bandwidth in the settled state (on-frequency) to reduce noise and breakthrough levels.

The principal synthesizer speed-up charge pump (CPPF) is controlled by the FAST input in synchronization with phase detector operation in such a way that potential disturbances are minimized. The dead zone (caused by finite time taken to switch the current sources on or off) is cancelled by feedback from the normal pump output to the phase detector thereby improving linearity.

An open drain transistor drives the output pin LOCK (pin 20). It is recommended that the pull-up resistor from this pin to VDD is chosen such that the value is high enough to keep the sink current in the LOW state below 400 µA. The circuit can be programmed to output either the phase error in the principal or auxiliary phase detectors or the combination from both detectors (OR function). The resultant output will be a current pulse with the duration of the selected phase error. By appropriate external filtering and threshold comparison an out-of-lock or an in-lock flag is generated.

Auxiliary synthesizer

The auxiliary synthesizer has a 14-bit main divider and an 11-bit reference divider. A separate power-down input AON (pin 19), disables currents in the auxiliary dividers, phase detector, and charge pump. The auxiliary input signal is amplified and fed to the main divider. The input buffer presents a high impedance, dominated by pin and pad capacitance. First divider stages use bipolar technology operating at input frequencies up to 300 MHz; the slower bits are CMOS. The auxiliary loop phase detector and charge pump use similar circuits to the main loop low-current phase comparator, including dead-zone compensation feedback.

The auxiliary reference divider is clocked on the opposite edge of the principal reference divider to ensure that active edges arrive at the auxiliary and principal phase detectors at different times. This minimizes the potential for interference between the charge pumps of each loop.

UMA1018M

Serial programming bus

A simple 3-line unidirectional serial bus is used to program the circuit. The 3 lines are DATA, CLK and data sent to the device is loaded in bursts framed by E. Programming clock edges and their appropriate data bits are ignored until E goes active LOW. The programmed information is loaded into the addressed latch when E returns inactive HIGH. Only the last 21 bits serially clocked into the device are retained within the programming register. Additional leading bits are ignored, and no check is made on the number of clock pulses. The fully static CMOS design uses virtually no current when the bus is inactive. It can always capture new programmed data even during power-down of main and auxiliary loops.

However, when either principal synthesizer or auxiliary synthesizer or both are powered-on, the presence of a TCXO signal is required at pin 8 (f programming.

Data format

Data is entered with the most significant bit first. The leading bits make up the data field, while the trailing four bits are an address field. The UMA1018M uses 6 of the 16 available addresses. These are chosen to allow direct compatibility with the UAA2072M integrated front-end. The data format is shown in Table 1. The first entered bit is p1, the last bit is p21.

The trailing address bits are decoded on the inactive edge

E. This produces an internal load pulse to store the data

of in one of the addressed latches. To ensure that the data is correctly loaded on first power-up, E should be held LOW and only taken HIGH after having programmed an appropriate register. To avoid erroneous divider ratios, the pulse is not allowed during data reads by the frequency dividers. This condition is guaranteed by respecting a minimum E pulse width after data transfer. The corresponding relationship between data fields and addresses is given in Table 2.

XTAL

E (enable). The

) for correct

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Table 1 Format of programmed data

LAST IN PROGRAMMING REGISTER BIT USAGE FIRST IN

p21 p20 p19 p18 p17 p16 ../.. p2 p1

ADD0 ADD1 ADD2 ADD3 DATA0 DATA1 ../.. DATA15 DATA16

LATCH ADDRESS LSB DATA COEFFICIENT MSB

Table 2 Bit allocation (note 1)

Philips Semiconductors Product speciﬁcation

Low-voltage dual frequency

synthesizer for radio telephones

p1 p2 p3 p4 p5 p6 p7 p8 p9 p10 p11 p12 p13 p14 p15 p16 p17 p18 p19 p20 p21 dt16 dt15 dt14 dt13 dt12 DATA FIELD dt4 dt3 dt2 dt1 dt0 ADDRESS

X X X X OLP OLA CR1 CR0 X X sPON sAON X X X X X 0001 PM16 PRINCIPAL MAIN DIVIDER COEFFICIENT PM0 0100 X X X X X X PR10 PRINCIPAL REFERENCE DIVIDER COEFFICIENT PR0 0101 X X X AM13 AUXILIARY MAIN DIVIDER COEFFICIENT AM0 0110 X X X X X X AR10 AUXILIARY REFERENCE DIVIDER COEFFICIENT AR0 0111 X X X X X X X X X 0 DA6 7-BIT DAC DA0 1000

Notes

1. FT = first; LT = last; sPON = software power-up for principal synthesizer (1 = ON); sAON = software power-up for auxiliary synthesizer (1 = ON).

2. The test register should not be programmed with any other value except all zeros for normal operation.

Table 3 Out-of-lock select

OLP OLA OUT-OF-LOCK ON PIN 20

0 0 output disabled 0 1 auxiliary phase error 1 0 principal phase error 1 1 both auxiliary and principal

TEST BITS

(2)

0000

UMA1018M

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