InfoContent
KeywordsClass D Audio Amplifier, Universal Class D, UcD, PWM Audio Amplifier,
High Power Audio.
AbstractThis user manual describes the operating instructions and the most
important background information of the Philips Semiconductor Discrete
Class D High Power Audio Amplifier Demonstrator Board. With proper
heatsinking of the Power MOSFETs and a well dimensioned powersupply,
the PWM amplifier is capable of supplying 200 W of high quality audio
power into a 4 Ω loudspeaker.
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Philips Semiconductors
Revision history
RevDateDescription
0220060905corrected
0120060801initial version
UM10155
Discrete Class D High Power Audio Amplifier
Figure 9.
Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, please send an email to: [email protected]
The Universal Class D (UcD) version 1.00 demonstrator board implements a 200 W true
RMS (into a 4 Ω load) high quality audio power amplifier on a very compact printed-circuit
board. The amplifier is built-up of discrete components only, and makes use of Philips
patent WO 03/090343.
UM10155
Discrete Class D High Power Audio Amplifier
001aaf148
Fig 1. General view
The demonstrator board is intended to illustrate the capability of Philips PowerMOSFETs
in discrete high-end PWM audio amplifier applications. The board is self-contained and
only requires a simple (non-stabilized) dual power supply, an audio source (e.g. function
generator,CD player) and a loudspeaker to demonstrate its capabilities. For evaluation at
high output power a provision is made to attach an appropriate heatsink to the MOSFETs
on the board.
A provision has been added to the circuit to provide pop-less/click-less start-up and
shutdown. To make use of the start-up facility, make sure that the supply power (pins J5
and J9) is applied prior to enabling the amplifier (connecting J3 to J4). Tobenefit from the
pop-less shutdown feature, disable the amplifier (disconnect J3 and J4) prior to removing
the supply power.
4.2 Overcurrent protection
A provision has been added to the circuit to monitor the current flowing through the Power
MOSFETs (Q13 and Q14). The voltage appearing between pins J5 and J6 is proportional
to the current in MOSFET Q14 (ratio: 50 mV/A) and the voltage between J8 and J9 is
proportional to the current in MOSFET Q13 (ratio: 50 mV/A). With the use of an external
circuit these two signals may be used to disable the amplifier (disconnect J3 and J4) in
case of an overcurrent situation. Similarly the J3-J4 pin combination can be used to
disable the amplifier in case of other fault conditions.
4.3 Important notice
The ‘High Power Class D Audio Amplifier Demonstrator Board’ is meant to demonstrate
the capabilities of the specific Class D Amplifier design and its semiconductor
components. No provisions for short-circuit and overcurrent protection were made on the
demonstrator board itself. Neither was an operating temperature compensation feature
implemented on the board. The circuit on the board is reduced to its essentials.
In this implementation the ‘High Power Class D Audio Amplifier Demonstrator Board’ is
not intended to be used for long term operation or under extreme temperature conditions
when delivering substantial output power.
5.Wiring diagram and powering-up
UM10155
Discrete Class D High Power Audio Amplifier
J3
J4
J1
signal
J2
ground
Audio input: J1 is signal; J2 is ground
Initially, leave J6 and J8 unconnected; J7 and J11 are at the same (ground) potential
• Implementing pop-less and click-less start-up and shut-down
• Shutting down the amplifier in case of a failure condition
(short-circuit/overcurrent/over-temperature)
The transistor in the enabling/disabling circuit must be low current, 60 V type (such as
BC846) and the resistor must limit the base current of the transistor to approximately
1 mA (in case of logic level driving, that would mean R = 4.7 kΩ).
The ‘Short-circuit and overcurrent protection’ circuit must be used together with the
‘Electronic enabling/disabling’ circuit.
The output pins of IC1 and IC2 produce a HIGH logic level pulse when overcurrent is
detected in either the low side MOSFET (Q13 on the Demonstrator Board) and high side
MOSFET (Q14 on the Demonstrator Board) respectively. The two signals are combined
through the IC3 OR-gate. The resulting signal must be processed in the ‘µP or other logic’
block. One of the simplest solutions would be a latch circuit, which on a high pulse forces
the output go low. This causes the ‘Electronic enabling/disabling circuit’ to disable the
amplifier. Through manual intervention and/or after a certain while, the latch should be
reset to a HIGH logic level, which in turn re-enables the amplifier.
The dead-time that is allowed between Q13 and Q14 conduction determines the
efficiency of the Demonstrator Board for a great deal; a long dead-time leads to better
efficiency. On the other side,long dead-time also leads to worse sonic performance; it has
important adverse consequences for e.g. THD.
Short dead-time causes quiescent current to go up, thus reducing efficiency and
improving sonic performance. The higher quiescent current is the result of more
cross-conduction of Q13 and Q14. So, most of the power that is lost in this way is
dissipated in Q13 and Q14, which may heat-up excessively. This may cause thermally
instable behavior of the MOSFETs. For that reason, the Demonstrator Board is shipped in
low quiescent current mode – during initial evaluation the risk of damaging the MOSFETs
through thermal runaway is thus reduced.
Nevertheless, by modifying one resistor value, the dead-time can be shortened and
evaluation in enhanced sonic performance mode can take place. Changing R9 to a lower
value decreases dead-time. It is left the responsibility of the experimenter to prevent
thermal runaway, but assistance from Philips will be available through the local sales
representatives.
UM10155
Discrete Class D High Power Audio Amplifier
To reduce the risk of thermal runaway in the enhanced sonic performance mode, a
thermal feedback loop can be implemented: the operating temperature of the MOSFETs
can be fed-back to the dead-time control by changing the fixed R9 value, mounting a PTC
resistor on the heatsink of the MOSFETs and connecting the PTC in parallel with R9.
Again, any changes are left the responsibility of the experimenter, but assistance from
Philips will be available through the local sales representatives.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave noliabilityfor theconsequences of
use of such information.
7.2Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
7.3Patents
Notice is herewith given that the subject device uses one or more of the
following patents and that each of these patents may have corresponding
patents in other jurisdictions.
WO 03/090343 — owned by Koninklijke Philips Electronics N.V. (int. patent
application)
7.4Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.