Datasheet UBA2070 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UBA2070

600 V CCFL ballast driver IC

Product specification
Supersedes data of 2001 Sep 27

2002 Oct 24

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

FEATURES

• Current controlled operation

• Adaptive non-overlap time control

• Integrated high voltage level shift function

• Power-down function

• Protected against lamp failures or lamp removal

• Capacitive mode protection.

APPLICATION

• The circuit topology enables a broad range of backlight
inverters.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

UBA2070T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
UBA2070P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1

GENERAL DESCRIPTION

TheUBA2070isahighvoltageintegratedcircuitfordriving
electronically ballasted Cold Cathode Fluorescent Lamps
(CCFL) at mains voltages up to 277 V (RMS) (nominal
value). The circuit is made in a 650 V Bipolar CMOS
DMOS (BCD) power logic process. The UBA2070
provides the drive function for the two discrete MOSFETs.
Besides the drive function the UBA2070 also includes the
level-shift circuit, the oscillator function, a lamp voltage
monitor, a current control function, a timer function and
protections.

PACKAGE

2002 Oct 24 2

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITION MIN. TYP. MAX. UNIT

High voltage supply

V

hs

Start-up state

V

DD(high)

V

DD(low)

I

DD(start)

Reference voltage (pin V

V

ref

Voltage controlled oscillator

f

bridge(max)

f

bridge(min)

Output drivers (pins GH and GL)

I

source

I

sink

Lamp voltage sensor (pin LVS)

V

LVS(fail)

V

LVS(max)

Average current sensor (pin CS)

V

offset

g

m

Ignition timer (pin CT)

V

OL

V

OH

high side supply voltage Ihs<30µA; t < 1 s −−600 V

oscillator start voltage 12.4 13 13.6 V
oscillator stop voltage 8.6 9.1 9.6 V
start-up current VDD<V

)

REF

DD(high)

− 170 200 µA

reference voltage IL=10µA 2.86 2.95 3.04 V

maximum bridge frequency 90 100 110 kHz
minimum bridge frequency 38.9 40.5 42.1 kHz

source current VGH− VSH= 0; VGL= 0 135 180 235 mA
sink current VGH− VSH=13V;

265 300 415 mA

VGL=13V

fail voltage level 1.19 1.25 1.31 V
maximum voltage level 1.67 1.76 1.85 V

offset voltage VCS= 0 to 2.5 V −2 0 +2 mV
transconductance f = 1 kHz 100 200 400 µA/mV

LOW-level output voltage − 1.4 − V
HIGH-level output voltage − 3.6 − V

2002 Oct 24 3

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2002 Oct 24 4

V

DD

V

REF

book, full pagewidth

BLOCK DIAGRAM

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

n.c.

GND

CT

8

5

1

REFERENCE

CURRENT

SUPPLY

IGNITION TIMER

VOLTAGE

CONTROLLED

OSCILLATOR

I

V

714

reference

voltages

digital

supply (5 V)

analog

V

DD(low)

reset

LOGIC

3 V

V

DD(clamp)

STATE LOGIC

• reset state

• ignition state

• burn state

• hold state

• powerdown state

LAMP

VOLTAGE

SENSOR

V

LVS(fail)VLVS(max)

BOOTSTRAP

DRIVER

LOGIC

FREQUENCY

CONTROL

LOGIC

LEVEL

SHIFTER

ANT/CMD

HS
DRIVER

LS
DRIVER

AVERAGE
CURRENT

SENSOR

9

FV

DD

10

GH

11

SH

6

GL

12

ACM

15
16

CS
CS

+

−

I

REF

4

CF

3

LVS

13

2

MGT990

CSW

Fig.1 Block diagram.

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

PINNING

SYMBOL PIN DESCRIPTION

CT 1 ignition timer output
CSW 2 voltage controlled oscillator input
CF 3 voltage controlled oscillator output
I

REF

GND 5 ground
GL 6 gate of the low side switch output
V

DD

n.c. 8 not connected
FV

DD

GH 10 gate of the high side switch output
SH 11 source of the high side switch
ACM 12 capacitive mode input
LVS 13 lamp voltage sensor input
V

REF

CS+ 15 average current sensor positive input
CS− 16 average current sensor negative input

4 internal reference current input

7 low voltage supply

9 floating supply; supply for the high side switch

14 reference voltage output

handbook, halfpage

CT

CSW

CF

I

REF

GND

GL

V

DD

n.c.

1
2
3
4

UBA2070T

5
6
7
8

MGT985

16

−

CS

15

+

CS
V

14

REF

13

LVS

12

ACM

11

SH

10

GH
FV

9

DD

Fig.2 Pin configuration (SO16).

2002 Oct 24 5

handbook, halfpage

CT

CSW

CF

I

REF

GND

GL

V

DD

n.c.

1
2
3
4

UBA2070P

5
6
7
8

MGT984

16

−

CS

15

+

CS
V

14

REF

13

LVS

12

ACM

11

SH

10

GH
FV

9

DD

Fig.3 Pin configuration (DIP16).

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

FUNCTIONAL DESCRIPTION
Start-up state

Initial start-up can be achieved by charging C

VDD

using an
externalstart-upresistor.Thestart-upofthecircuitissuch,
that the MOSFETs Tls and Ths shall be non-conductive.
The circuit will be reset in the start-up state. If the V
supply reaches the value of V

the circuit starts

DD(high)

DD

oscillating. A DC reset circuit is incorporated in the high
side (hs) driver. Below the lockout voltage at pin FVDDthe
output voltage (VGH− VSH) is zero. The voltages at pins
CF and CT are zero during the start-up state.

Oscillation

The internal oscillator is a Voltage Controlled Oscillator
circuit (VCO) which generates a sawtooth waveform
between the high level at pin CF and 0 V (see Fig.4). The
frequency of the sawtooth is determined by CCF,
R

and the voltage at pin CSW. The minimum and

IREF

maximum frequencies are determined by CCF and R

IREF

The minimum to maximum ratio is fixed internally. The
sawtooth frequency is twice the half bridge frequency. The
IC brings the MOSFETs Thsand Tls alternately into
conduction with a duty factor of 50%.The oscillator starts
oscillating at f

. During the first switching cycle the

max

MOSFET Tls is switched on. To charge the bootstrap
capacitorthe first conduction time after thestart-upstate is
made extra long. In all other cases the duty factor at the
start is 50%.

Non-overlap time

The non-overlap time is realized with an Adaptive
Non-Overlap circuit (ANT). By using this circuit, the
application determines the duration of the non-overlap
time (determined by the slope of the half bridge voltage
and detected by the signal across R

) and makes the

ACM

non-overlap time optimum for each frequency (see Fig.4).
The minimum non-overlap time is internally fixed. The
maximum non-overlap time is internally fixed at
approximately 25% of the bridge period time.

Ignition state

After the start at f

the frequency will decrease due to

max

charging the capacitor at pin CSW with an internally fixed
current. During this continuous decrease in frequency, the
circuit approaches the resonant frequency of the lamp.
This will cause a high voltage across the lamp, which
ignites the lamp. The ignition voltage of the lamp is
designedtobeabovethe V

level.Ifthelampvoltage

LVS(fail)

exceeds this voltage level the ignition timer is started (see
Fig.5).

Burn state

If the lamp voltage does not exceed the V

LVS(max)

voltage at pin CSW will continue to increase until the
clamp level at pin CSW is reached. As a consequence the
frequency will decrease until the minimum frequency is
reached. When the frequency reaches its minimum level it
is assumed that the lamp has ignited, the circuit will enter
the burn state and the Average Current Sensor (ACS)

.

circuit will be enabled (see Fig.5). As soon as the average
voltage across R

(measured at pin CS−) reaches the

sense

reference level at pin CS+, the average current sensor
circuit will take over the control of the lamp current. The
average current through R

is transferred to a voltage

sense

at the voltage controlled oscillator to regulate the
frequency and, as a result, the lamp current.

Lamp failure

DURING IGNITION STATE
Ifthe lamp fails to ignite, thevoltage level increases. When

the lamp voltage exceeds the V

LVS(max)

level, the voltage
will be regulated at that level. The ignition timer is started
when the V
pin LVS is above the V

level is exceeded. If the voltage at

LVS(fail)

level at the end of the

LVS(fail)

ignition time the circuit stops oscillation and is forced into
aPower-downstate(seeFig.6).Thisstateisterminatedby
switching off the VDD supply.

DURING BURN STATE

level the

Timing circuit

Atiming circuit is included (a clockgenerator)to determine
the maximum ignition time. The ignition time is defined as
1 pulseat pin CT; the lamp has toignite within the duration
of this pulse. The timer circuit starts operating when a
critical value of the lamp voltage [V

LVS(fail)

] is exceeded.
When the timer is not operating the capacitor at pin CT is
discharged by 1 mA to 0 V.

2002 Oct 24 6

If the lamp fails during normal operation, the voltage
across the lamp will increase and the lamp voltage will
exceedthe V

level.This forces the circuit to re-enter

LVS(fail)

the ignition state and results in an attempt to re-ignite the
lamp. If during restart the lamp still fails, the voltage
remains high until the end of the ignition time. At the end
of the ignition time the circuit stops oscillating and enters
the Power-down state (see Fig.7).

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

handbook, full pagewidth

GH-SH

V

half bridge

V

CF

GL

ACM

0

0

0

0

V

+

CMD

0

V

−

CMD

Fig.4 Oscillator and driver timing.

MGT989

t

handbook, full pagewidth

V

LVS

V

LVS(max)

V

LVS(fail)

Timer

on
off

start timer stop timer

Fig.5 Normal ignition behaviour.

2002 Oct 24 7

f

min

Burn stateIgnition state

detection

MGT986

t

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

handbook, full pagewidth

V

LVS

V

LVS(max)

V

LVS(fail)

Timer

start timer

on
off

Fig.6 Lamp failure during ignition state.

Power-downIgnition state

MGT987

t

handbook, full pagewidth

V

LVS

V

LVS(max)

V

LVS(fail)

Timer

start timer

on
off

Ignition

Fig.7 Lamp failure during burn state.

2002 Oct 24 8

Power-downBurn state

MGT988

t

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

Power-down state

The Power-down state will be entered if, at the end of the
ignition time, the voltage at pin LVS is above V

LVS(fail)

.
In thePower-downstatetheoscillation will be stopped and
MOSFETs Thsand Tls will be non-conductive. The V

DD

supply is internally clamped. The circuit is released from
the Power-down state by reducing the supply voltage to
below V

DD(reset)

.

Capacitive mode protection

The signal across R

also gives information about the

ACM

switching behaviour of the half bridge. If the voltage at
R

does not exceed the V

ACM

level during the

CMD

Charge coupling

Due to parasitic capacitive coupling to the high voltage
circuitry all pins are charged with a repetitive charge
injection. Given the typical application the pins
I

and CF are sensitive to this charge injection. For

REF

charge coupling of ±8 pC, a safe functional operation of
the IC is guaranteed, independent of the current level.

Charge coupling at current levels below 50 µA will not
interfere with the accuracy of the VCS and V

Charge coupling at current levels below 20 µA will not
interfere with the accuracy of any parameter.

non-overlap time (see Fig.4), the Capacitive Mode
Detection (CMD) circuit assumes that the circuit is in
capacitivemodeofoperation.Consequently the frequency
will be directly increased to f

. In this event the

max

frequency behaviour is decoupled from the voltage at
pin CSWuntilthevoltageisdischargedtozero.Aninternal
filter of 30 ns is included at pin ACM to increase the noise
immunity.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages referenced to ground.

ACM

levels.

SYMBOL PARAMETER CONDITION MIN. MAX. UNIT

V

hs

V

ACM

V

LVS

V

CS+

V

CS−

V

CSW

T

amb

T

j

T

stg

V

esd

high side supply voltage Ihs<30µA; t<1s − 600 V

<30µA − 510 V

I

hs

voltage on pin ACM −5+5V
voltage on pin LVS 0 5 V
voltage on pin CS+ 0 5 V
voltage on pin CS−−0.3 +5 V
voltage on pin CSW 0 5 V
ambient temperature −25 +80 °C
junction temperature −25 +150 °C
storage temperature −55 +150 °C
electrostatic discharge voltage note 1

pins FV

, GH, SH and V

DD

DD

pins GL, ACM, CS+, CS−, CSW,
LVS, CF, I

, CT and V

REF

REF

−1000 +1000 V

−2500 +2500 V

Note

1. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series

resistor.

2002 Oct 24 9

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

THERMAL CHARACTERISTICS

SYMBOL PARAMETER DESCRIPTION VALUE UNIT

R

th(j-a)

R

th(j-t)

QUALITY SPECIFICATION

thermal resistance from junction to ambient in free air

SO16 100 K/W
DIP16 60 K/W

thermal resistance from junction to tie-point

SO16 50 K/W
DIP16 30 K/W

In accordance with

“SNW-FQ-611D”

.

CHARACTERISTICS

VDD=13V,V

− VSH=13V;T

FVDD

=25°C; all voltages referenced to ground; see Fig.8; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITION MIN. TYP. MAX. UNIT

High voltage supply

I

L

leakage current on high voltage pins voltage at pins FVDD,

−− 30 µA

GH and SH = 600 V

Start-up state (pin VDD)

V

DD

supply voltage for defined driver

Ths= off; Tls= off −− 6V

output

V

DD(high)

V

DD(low)

V

DD(hys)

I

DD(start)

V

DD(clamp)

I

DD(pd)

V

DD(reset

I

DD

) reset voltage Ths= off; Tls= off 4.5 5.5 7 V

oscillator start voltage 12.4 13 13.6 V
oscillator stop voltage 8.6 9.1 9.6 V
start-stop hysteresis voltage 3.5 3.9 4.4 V
start-up current VDD<V

DD(high)

− 170 200 µA
clamp voltage Power-down mode 10 11 12 V
Power-down current VDD=9V − 170 200 µA

operating supply current f

= 40 kHz without

bridge

− 1.5 2.2 mA

gate drive

Reference voltage (pin V

V

ref

I

ref

reference voltage IL=10µA 2.86 2.95 3.04 V
reference current source 1 −−mA

REF

)

sink 1 −−mA

Z

o

∆V

/∆T temperature coefficient of V

ref

Current supply (pin I

V

I

I

I

output impedance IL= 1 mA source − 3 −Ω

REF

ref

IL=10µA;
T

=25to150°C

amb

)

−−0.64 − %/K

input voltage − 2.5 − V
input current 65 − 95 µA

2002 Oct 24 10

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

SYMBOL PARAMETER CONDITION MIN. TYP. MAX. UNIT

Voltage controlled oscillator

t

start

f

bridge(max)

f

bridge(min)

∆f

stab

t

no(min)

t

no(max)

PIN CSW
V

i

V

clamp

PIN CF
I

start

I

min

I

max

V

OH

Output drivers

V

boot

V

FVDD

I

FVDD

PINS GH AND GL
I

source

I

sink

V

OH

V

OL

HIGH SIDE AND LOW SIDE

R

on

R

off

Adaptive non-overlap timing and capacitive mode detection (pin ACM)

I

i

V

det

first output oscillator stroke after start-up state only − 50 −µs
maximum bridge frequency 90 100 110 kHz
minimum bridge frequency 38.9 40.5 42.1 kHz
frequency stability T

= −20 to +80 °C − 1.3 − %

amb

minimum non-overlap time GH to GL 0.68 0.90 1.13 µs

GL to GH 0.75 1 1.25 µs

maximum non-overlap time at f

= 40 kHz; note 1 − 6.7 −µs

bridge

input voltage 2.7 3 3.3 V
clamp voltage burn state 2.8 3.1 3.4 V

start current VCF= 1.5 V 3.8 4.5 5.2 µA
minimum current VCF= 1.5 V − 21 −µA
maximum current VCF= 1.5 V − 54 −µA
HIGH-level output voltage f = f

min

− 2.5 − V

bootstrap diode forward drop I = 5 mA 1.3 1.7 2.1 V
lockout voltage on pin FV

DD

floating well supply current on
pin FV

DD

DC level at
VGH− VSH=13V

2.8 3.5 4.2 V

− 35 −µA

source current VGH− VSH= 0; VGL= 0 135 180 235 mA
sink current VGH− VSH=13V;

265 300 415 mA

VGL=13V
HIGH-level output voltage Io= 10 mA 12.5 −−V
LOW-level output voltage Io=10mA −− 0.5 V

on resistance Io=10mA 32 39 45 Ω
off resistance Io=10mA 16 21 26 Ω

input current V

= 1.25 V −− 1µA

ACM

capacitive mode detection voltage positive 80 100 120 mV

negative −68 −85 −102 mV

2002 Oct 24 11

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

SYMBOL PARAMETER CONDITION MIN. TYP. MAX. UNIT

Lamp voltage sensor (pin LVS)

I

i

V

LVS(fail)

V

LVS(fail)(hys)

∆V

LVS(fail)(hys)

V

LVS(max)

I

o(sink)

I

o(source)(ign)

input current V
fail voltage 1.19 1.25 1.31 V
fail voltage hysteresis 112 140 168 mV

/∆T temperature coefficient hysteresis − 0.65 − mV/K

maximum voltage 1.67 1.76 1.85 V
output sink current V
ignition output source current V

Average current sensor (pins CS+ and CS−)

I

i

V

offset

I

o(source)

I

o(sink)

g

m

input current VCS=0V −− 1µA
offset voltage VCS= 0 to 2.5 V −2 0 +2 mV
output source current V
output sink current V
transconductance f = 1 kHz 100 200 400 µA/mV

Ignition timer (pin CT)

I

o

V

OL

V

OH

V

hys

t

ign

output current VCT= 2.5 V 5.5 5.9 6.3 µA
LOW-level output voltage − 1.4 − V
HIGH-level output voltage − 3.6 − V
output hysteresis 2.05 2.20 2.35 V
ignition time − 0.257 − s

Note

1. The maximum non-overlap time is determined by the level of the CF signal. If this signal exceeds a level of 1.25 V
the non-overlap will end. This equals a maximum non-overlap time of 6.7 µs at a bridge frequency of 40 kHz.

= 1.25 V −− 1µA

LVS

= 2 V 2.8 3.2 3.6 µA

CSW

= 2 V 9.0 10 11 µA

CSW

= 2.0 V 9.0 10 11 µA

CSW

= 2.0 V 9.0 10 11 µA

CSW

2002 Oct 24 12

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2002 Oct 24 13

R

VDD

470 kΩ

BOOTSTRAP

V

7

DD

SUPPLY

DRIVER

CONTROL

UBA2070

+

V

DC

300 V

C

VDD
1 µF

CT

IGNITION

TIMER

REFERENCE

CURRENT

DIVIDER

VOLTAGE

CONTROLLED

OSCILLATOR

HIGH SIDE

DRIVER

LOW SIDE

DRIVER

ADAPTIVE

NON-OVERLAP

TIMING

CAPACITIVE

MODE DETECTOR

LAMP

VOLTAGE

SENSOR

AVERAGE
CURRENT

SENSOR

−
+

FV

9

DD

GH

10
11

SH

6

GL

ACM1

12

LVS

13

−

CS

16

+

CS

15

dbook, full pagewidth

C

boot

100 nF

R

GH

47 Ω

R

GL

47 Ω

R

8.2 kΩ

avg

T

T

hs

ls

R

ACM

1.5 Ω

D

C

LVS3

56 nF

VDD

C

BR1

1 nF

C

BR2

18 nF

220 nF

Z

D

LVS1

R

LVS

150 kΩ

C

DC

VDD

13 V

D

LVS2

C

LVS1

8.2 nF

C

LVS2

8.2 nF

C

1 nF

C

1 nF

res1

res2

C

lamp1

47 pF

Lamp1

C

lamp2

47 pF

Lamp2

APPLICATION AND TEST INFORMATION

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

C

CT

330 nF

45 3 2 14

REF

R

IREF

33 kΩ

C

CF

100 pF

CSWCFGNDI

C

CSW

220 nF

V

REF

R

pwr1

220 kΩ

Fig.8 Test application circuit.

C

1 nF

pwr

R

pwr2

8.2 kΩ

C

avg

12 nF

MGT991

R

sense

2.2 Ω

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

PACKAGE OUTLINES

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Z

16

pin 1 index

1

D

c

y

9

A

2

A

1

8

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

A

max.

1.75

0.069

OUTLINE
VERSION

SOT109-1

A1A

0.25

0.10

0.010

0.004

A

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.0100

0.019

0.0075

0.014

2

1.45

1.25

0.057

0.049

IEC JEDEC EIAJ

076E07 MS-012

(1)E(1) (1)

cD

10.0

4.0

3.8

0.16

0.15

1.27

0.050

9.8

0.39

0.38

REFERENCES

2002 Oct 24 14

eHELLpQZywv θ

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.020

EUROPEAN

PROJECTION

0.25 0.1

0.01

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

6.2

5.8

0.244

0.228

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

D

seating plane

L

Z

16

pin 1 index

e

b

b

1

9

A

w M

SOT38-1

M

E

A

2

A

1

c

(e )

1

M

H

E

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

max.

4.7 0.51 3.7

OUTLINE

VERSION

SOT38-1

min.

A

1 2

max.

0.15

IEC JEDEC EIAJ

050G09 MO-001 SC-503-16

b

1.40

1.14

0.055

0.045

b

1

0.53

0.38

0.021

0.015

cEe M

0.32

0.23

0.013

0.009

REFERENCES

(1) (1)

D

21.8

21.4

0.86

0.84

2002 Oct 24 15

6.48

6.20

0.26

0.24

8

(1)

Z

e

0.30

1

0.15

0.13

M

L

3.9

3.4

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

9.5

8.3

0.37

0.33

w

H

0.2542.54 7.62

0.010.100.0200.19

ISSUE DATE

95-01-19
99-12-27

max.

2.2

0.087

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

SOLDERING
Introduction

Thistextgivesaverybriefinsight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsaremixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

stg(max)

). If the

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.

2002 Oct 24 16

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

(1)

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable

SOLDERING METHOD

WAVE REFLOW

(3)

− suitable

(2)

DIPPING

Surface mount BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable −

HBCC, HBGA, HLQFP, HSQFP, HSOP,

not suitable

(4)

suitable −

HTQFP, HTSSOP, HVQFN, HVSON, SMS

(5)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

, SO, SOJ suitable suitable −

(5)(6)

suitable −

(7)

suitable −

Notes

1. Formoredetailed information on the BGA packages refer tothe

“(LF)BGAApplication Note

”(AN01026);order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

6. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

7. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 Oct 24 17

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2002 Oct 24 18

Philips Semiconductors Product specification

600 V CCFL ballast driver IC UBA2070

NOTES

2002 Oct 24 19

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613502/02/pp20 Date of release: 2002 Oct 24 Document order number: 9397 750 10257

SCA74