Datasheet UBA1710M Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UBA1710M

Modulator for GaAs power
amplifiers

Product specification
Supersedes data of 1997 Feb 18
File under Integrated Circuits, IC17

1997 Oct 17

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

FEATURES

• Power MOS modulators for control of GaAs power
amplifier drain voltage

• Power control loop amplifier and MOS driver

• Voltage tripler for supply of MOS driver

• Positive-to-negative DC converter for GaAs power

amplifier gate biasing.

APPLICATIONS

• Control of GaAs power amplifiers for GSM and DCS
hand-held transceivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

V

CC

V

DD

I

CC+IDD

T

amb

analog supply voltage 4.2 4.8 7.5 V
digital supply voltage 4.2 4.8 7.5 V
peak supply current in power-up mode − 12 − mA
operating ambient temperature −20 − +85 °C

Note

1. For conditions, see Chapter “Characteristics”.

(1)

GENERAL DESCRIPTION

The UBA1710M integrates the functions required to
operate the GaAs Power Amplifiers (PAs) from the
CGY20xx family which are intended for GSM and DCS
applications.

It includes a negative supply for PA gate biasing and most
of the functions required to implement power control so
that only a very few external component are required.
The power control section integrates two power MOS
devices for control of the PA drain voltages, an MOS driver
and a feedback loop amplifier. The MOS driver is supplied
from an on-chip voltage tripler.

MIN. TYP. MAX. UNIT

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

UBA1710M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1997 Oct 17 2

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

BLOCK DIAGRAM

TC1

handbook, full pagewidth

D1B
D1A

S1B
S1A

D2
S2

TC1

689

16
15

14
13

18
17

TC2

P

N

VOLTAGE TRIPLER

POWER MOS 1

POWER MOS 2

PINNING

SYMBOL PIN DESCRIPTION

NC3
NC3
V

N

V

CC

P
N

1 charge pump tank capacitor
2 charge pump tank capacitor
3 negative bias voltage

4 analog supply voltage
GND 5 ground
TC1
V

DD

TC1
TC2
TC2
V

P

N

P
N
P

6 charge pump tank capacitor

7 digital supply voltage

8 charge pump tank capacitor

9 charge pump tank capacitor

10 charge pump tank capacitor

11 positive tripler voltage
BUFI 12 buffer input
S1A 13 power MOS 1 source A
S1B 14 power MOS 1 source B
D1A 15 power MOS 1 drain A
D1B 16 power MOS 1 drain B
S2 17 power MOS 2 source
D2 18 power MOS 2 drain
R

ext

19 external resistance for V
STB 20 standby input (active HIGH)

TC2

V

N

P

10 11

STB

P

CLOCK

BUFFER

475 12

V

V

CC

Fig.1 Block diagram.

handbook, halfpage

N

NC3

20

NEGATIVE DC-DC

UBA1710M

MANAGEMENT

GND BUFI

DD

NC3

N

2

CONVERTER

POWER

NC3

NC3

TC1

TC1
TC2
TC2

V

N

P

13

MGG536

1

P

2

N

V

3

N

V

4

CC

GND

5

UBA1710M

6

N

V

7

DD

8

P

9

N

10

P

19

Fig.2 Pin configuration.

R

ext

MGG535

STB

20
19

R

ext

18

D2

17

S2

16

D1B
D1A

15

S1B

14

S1A

13

BUFI

12

V

11

P

1997 Oct 17 3

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

FUNCTIONAL DESCRIPTION
Power control section

Power control for GaAs PAs from the CGY20xx family is
achieved by varying the drain voltage. This is achieved
with the UBA1710M by means of the two power MOS
devices integrated on-chip. They enable separate control
of the PA output stage from the pre-amplifier stages.
They have a very low ‘on’ resistance for low drop voltage
at high RF output power.

The standard value is typically −2 V, without any external
resistor connected. The other one is a voltage tripler and
is required to supply the MOS driver. The driver is required
to raise the MOS gate voltage well above the battery
voltage in order to open the MOS switches
(‘high side’ driver).

These DC-DC converters are operated at a typical
frequency of 600 kHz supplied by an internal oscillator.
Five external capacitors with a typical value of 0.1 µF
(0603 SMD) are required to operate these converters.

The MOS devices are driven by a buffer. The buffer
amplifier, in association with power MOS, is included in a
feedback loop to exhibit a high cut-off frequency (3 MHz)
over the whole control dynamic range. This buffer allows
fast switching of the MOS in accordance with GSM power
ramping requirements.

DC-DC converters

One DC-DC converter is required to provide negative gate
biasing to the GaAs PA.

Power management

The power management disables the PA drain voltage and
prevents the PA from burnout if drain voltage is supplied
before the negative gate voltage is available.

Standby mode

An additional feature includes a standby mode, reducing
the current consumption to a maximum value of 1 µA.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

V

DD

V

I

analog supply voltage −0.5 +9.0 V
digital supply voltage −0.5 +9.0 V
DC input voltage

all pins (except BUFI) −0.5 +9.0 V
pin BUFI −0.5 +5.0 V

I

I

P

tot

T

stg

T

amb

DC current into any signal pin −10 +10 mA
total power dissipation − 0.65 W
storage temperature −65 +150 °C
operating ambient temperature −20 +85 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient 100 K/W

1997 Oct 17 4

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

CHARACTERISTICS

V

CC=VDD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

I

CC+IDD

I

stb

Power MOS 1

R

DSon1

Power MOS 2

R

DSon2

Clock circuit

f

clk

Voltage tripler

V

Po

V

R(p-p)

t

on

Negative DC/DC converter

V

No

V

R(p-p)

t

on

MOS buffer amplifier

V

IL

V

IH

t

sw

= 4.8 V; T

=25°C; unless otherwise specified.

amb

peak supply current power-up mode; PA on − 12 − mA

power-down mode; PA off − 5 − mA

standby current standby mode − 0.1 1 µA

on resistance IDS= 1.3 A − 0.18 −Ω

on resistance IDS= 0.4 A − 0.5 −Ω

clock frequency − 600 − kHz

output voltage with IPo= 2 mA 11.3 11.8 12.3 V
amplitude ripple

(peak-to-peak value)

with IPo= 2 mA;
C1 = C2 = 100 nF; CP= 100 nF

− 20 − mV

turn-on time − 100 −µs

output voltage with INo= 250 µA; R
amplitude ripple

(peak-to-peak value)

with INo= 250 µA; C3 = 100 nF;
CN= 100 nF

= 470 kΩ−1.5 −1.8 −2.0 V

ext

− 2 − mV

turn-on time − 280 −µs

LOW level input voltage − 1.2 − V
HIGH level input voltage − 3.4 − V
switching time from 0 to 4.5 V 2 Ω load at MOS outputs − 1 −µs

1997 Oct 17 5

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

APPLICATION INFORMATION

handbook, full pagewidth

V

bat

D1B

16

D1A

15

S1B

14

S1A

13

D2

18

S2

17

PA input PA output

PA

C1 C2 C3

TC1

TC1

N

689

VOLTAGE TRIPLER

TC2

P

N

10 11

POWER MOS 1

POWER MOS 2

C

P

TC2

V

P

P

STB
20

CLOCK

UBA1710M

BUFFER

475 12

V

V

CC

DD

NEGATIVE DC-DC

GND BUFI

Fig.3 Application diagram.

NC3

NC3

N

2

CONVERTER

POWER

MANAGEMENT

P

13

C

N

V

N

R

19

ext

MGG537

1997 Oct 17 6

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

D

c

y

Z

20

pin 1 index

11

A

2

A

1

110

w M

b

e

p

E

H

E

detail X

SOT266-1

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE
VERSION

SOT266-1

A

max.

1.5

0.1501.4

1.2

b

3

p

0.32

0.20

0.20

0.13

0.25

IEC JEDEC EIAJ

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

(1)E(1)

cD

6.6

6.4

REFERENCES

4.5

0.65 1.0 0.2

4.3

1997 Oct 17 7

eHELLpQZywv θ

6.6

6.2

0.75

0.45

0.65

0.45

PROJECTION

0.13 0.1

EUROPEAN

(1)

0.48

0.18

ISSUE DATE

90-04-05
95-02-25

o

10

o

0

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Oct 17 8

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 17 9

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

NOTES

1997 Oct 17 10

Philips Semiconductors Product specification

Modulator for GaAs power amplifiers UBA1710M

NOTES

1997 Oct 17 11

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Printed in The Netherlands 437027/1200/03/pp12 Date of release: 1997 Oct 17 Document order number: 9397 750 02955