Philips TEA5767HL_3 Datasheet

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Page 1

INTEGRATED CIRCUITS

DATA SH EET

TEA5767HL

Low-power FM stereo radio for handheld applications

Product speciﬁcation Supersedes data of 2003 Nov 06

2004 Sep 13

Page 2

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

CONTENTS

1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 QUICK REFERENCE DATA 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION

7.1 Low-noise RF amplifier

7.2 FM mixer

7.3 VCO

7.4 Crystal oscillator

7.5 PLL tuning system

7.6 RF AGC

7.7 IF filter

7.8 FM demodulator

7.9 Level voltage generator and analog-to-digital converter

7.10 IF counter

7.11 Soft mute

7.12 MPX decoder

7.13 Signal dependent mono to stereo blend

7.14 Signal dependent AF response

7.15 Software programmable ports

8 3-WIRE BUS AND BUS-CONTROLLED

FUNCTIONS

8.1 3-wire bus specification

8.1.1 Data transfer

8.1.2 Power-on reset

8.2 Writing data

8.3 Reading data

8.4 Bus timing

TEA5767HL

9 LIMITING VALUES 10 THERMAL CHARACTERISTICS 11 DC CHARACTERISTICS 12 AC CHARACTERISTICS 13 INTERNAL PIN CONFIGURATION 14 APPLICATION INFORMATION 15 PACKAGE OUTLINE 16 SOLDERING

16.1 Introduction to soldering surface mount packages

16.2 Reflow soldering

16.3 Wave soldering

16.4 Manual soldering

16.5 Suitability of surface mount IC packages for wave and reflow soldering methods

17 DATA SHEET STATUS 18 DEFINITIONS 19 DISCLAIMERS

2004 Sep 13 2

Page 3

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

1 FEATURES

• High sensitivity due to integrated low-noise RF input amplifier

• FM mixer for conversion to IF of the US/Europe (87.5 MHz to 108 MHz) and Japanese (76 MHz to 91 MHz) FM band

• Preset tuning to receive Japanese TV audio up to 108 MHz

• RF Automatic Gain Control (AGC) circuit

• LC tuner oscillator operating with low cost fixed chip

inductors

• FM IF selectivity performed internally

• No externaldiscriminatorneeded due to fully integrated

FM demodulator

• Crystal reference frequency oscillator; the oscillator operates with a 32.768 kHz clock crystal or with a 13 MHz crystal and with an externally applied 6.5 MHz reference frequency

• PLL synthesizer tuning system

• 3-wire bus

• 7-bit IF counter output via the 3-wire bus

• 4-bit level information output via the 3-wire bus

TEA5767HL

• Soft mute

• Signal dependent mono to stereo blend [Stereo Noise

Cancelling (SNC)]

• Signal dependent High Cut Control (HCC)

• Soft mute, SNC and HCC can be switched off via the

3-wire bus

• Adjustment-free stereo decoder

• Autonomous search tuning function

• Standby mode

• Two software programmable ports

• Bus enable line to switch the bus input and output lines

into 3-state mode.

2 GENERAL DESCRIPTION

The TEA5767HL is a single-chip electronically tuned FM stereo radio for low-voltage applications with fully integrated IF selectivity and demodulation. The radio is completely adjustment-free and only requires a minimum of small and low cost external components. The radio can be tuned to the European, US and Japanese FM bands.

3 ORDERING INFORMATION

TYPE

NUMBER

TEA5767HL LQFP32 plastic low proﬁle quad ﬂat package; 32 leads; body 7 × 7 × 1.4 mm SOT358-1

NAME DESCRIPTION VERSION

PACKAGE

2004 Sep 13 3

Page 4

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

4 QUICK REFERENCE DATA

CCA=VCC(VCO)=VCCD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CCA

CC(VCO)

analog supply voltage 2.5 3.0 5.0 V voltage controlled oscillator

supply voltage

CCD

CCA

CC(VCO)

digital supply voltage 2.5 3.0 5.0 V analog supply current operating; V

voltage controlled oscillator supply current

CCD

FM(ant)

amb

digital supply current operating; V

FM input frequency 76 − 108 MHz

ambient temperature V FM overall system parameters; see Fig.7 V

−200

+200

RF sensitivity input voltage fRF= 76 MHz to 108 MHz; ∆f = 22.5 kHz;

LOW side 200 kHz selectivity ∆f=−200 kHz; fRF= 76 MHz to 108 MHz;

HIGH side 200 kHz

selectivity V

AFL

; V

left and right audio frequency

AFR

output voltage (S+N)/N maximum signal plus

noise-to-noise ratio

cs(stereo)

stereo channel separation VRF= 1 mV; R = L = 0 or R = 0 and L = 1

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;f

2.5 3.0 5.0 V

= 3 V 6.0 8.4 10.5 mA

CCA

standby mode; V operating; V

VCOTANK1=VVCOTANK2

standby mode; V

CCD

standby mode; V

=3V − 36 µA

CCA

= 3 V 560 750 940 µA

VCOTANK1=VVCOTANK2

=3V − 12 µA

= 3 V 2.1 3.0 3.9 mA

=3V

CCD

bus enable line HIGH 30 56 80 µA bus enable line LOW 11 19 26 µA

CCA=VCC(VCO)=VCCD

=2.5Vto5V −10 − +75 °C

− 2 3.5 µV

= 1 kHz; (S+N)/N = 26 dB;

mod

de-emphasis = 75 µs; L = R; BAF= 300 Hz to 15 kHz

32 36 − dB

note 1 ∆f = +200 kHz; fRF= 76 MHz to 108 MHz;

39 43 − dB

note 1 VRF= 1 mV; L = R; ∆f = 22.5 kHz;

= 1 kHz; de-emphasis = 75 µs

mod

VRF= 1 mV; L = R; ∆f = 22.5 kHz; f

= 1 kHz; de-emphasis = 75 µs;

mod

60 75 90 mV

54 60 − dB

BAF= 300 Hz to 15 kHz

24 30 − dB

including 9 %pilot; ∆f = 75 kHz; f

mod

= 1 kHz;

data byte 3 bit 3 = 0; data byte 4 bit1=1

mod

= 1 kHz;

− 0.4 1 %

de-emphasis = 75 µs

Note

1. LOWside andHIGH side selectivitycan be switchedby changing themixer from HIGHside to LOWside LOinjection.

2004 Sep 13 4

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2004 Sep 13 5

5 BLOCK DIAGRAM

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

handheld applications

CCA

FM antenna

22 nF

4.7 Ω

100 pF

47 nF 47 nF 33 nF

LIMDEC2

24 23 22 21 20

27 pF 47 pF

22 µF

4.7 nF LOOPSW

gain

AGND

CCA

RFI1

RFGND

RFI2

TAGC

I/Q-MIXER

1st FM

28 29

TUNING SYSTEM

CPOUT VCOTANK2 V

39 nF10 nF

10 kΩ

100 kΩ

AGC

VCO

VCOTANK1

D1 D2

GAIN

STABILIZATION

RESONANCE

AMPLIFIER

IF CENTRE

FREQUENCY

ADJUST

programmable divider output

reference frequency divider output

CC(VCO)

LIMDEC1 TIFC V

LIMITER

LEVEL

ADC

5678 DGND CLOCK

12 Ω

CCD

47 nF

DEMODULATOR

COUNTER

ref

MUX

3-WIRE BUS

CCD

22 nF

TEA5767HL

PROGRAMMABLE

DATAV

ref

POWER SUPPLY

SOFTWARE

PORT

pilot

mono

MPXO TMUTE

SOFT MUTE

MPX

DECODER

33 nF

AFR

19 18 17

SDS

CRYSTAL

OSCILLATOR

mhc245

AFL

15 14

12 11

PILFIL

33 kΩ

PHASEFIL XTAL2

pull

XTAL1

SWPORT2 SWPORT1

BUSENABLE

WRITE/READ

1 nF

22 nF

(1)

10 kΩ

comp

(1)

32.768 kHz or

13 MHz

CCA

The component list is given in Chapter 14. (1) C

comp

and C

data depends on crystal specification.

pull

47 Ω

22 nF

CC(VCO)

TEA5767HL

Fig.1 Block diagram.

Page 6

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

6 PINNING

SYMBOL PIN DESCRIPTION

CPOUT 1 charge pump output of synthesizer PLL VCOTANK1 2 voltage controlled oscillator tuned circuit output 1 VCOTANK2 3 voltage controlled oscillator tuned circuit output 2 V

CC(VCO)

DGND 5 digital ground V

CCD

DATA 7 bus data line input/output CLOCK 8 bus clock line input WRITE/READ 9 write/read control input for the 3-wire bus BUSENABLE 10 bus enable input SWPORT1 11 software programmable port 1 SWPORT2 12 software programmable port 2 XTAL1 13 crystal oscillator input 1 XTAL2 14 crystal oscillator input 2 PHASEFIL 15 phase detector loop ﬁlter PILFIL 16 pilot detector low-pass ﬁlter V

AFL

AFR

TMUTE 19 time constant for soft mute MPXO 20 FM demodulator MPX signal output V

ref

TIFC 22 time constant for IF centre adjust LIMDEC1 23 decoupling IF limiter 1 LIMDEC2 24 decoupling IF limiter 2 I

gain

AGND 26 analog ground V

CCA

RFI1 28 RF input 1 RFGND 29 RF ground RFI2 30 RF input 2 TAGC 31 time constant RF AGC LOOPSW 32 switch output of synthesizer PLL loop ﬁlter

4 voltage controlled oscillator supply voltage

6 digital supply voltage

17 left audio frequency output voltage 18 right audio frequency output voltage

21 reference voltage

25 gain control current for IF ﬁlter

27 analog supply voltage

TEA5767HL

2004 Sep 13 6

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

CPOUT LIMDEC2 VCOTANK1 LIMDEC1 VCOTANK2 TIFC

CC(VCO)

CLOCK V

1 2 3 4 5

DGND MPXO

CCD

DATA V

CCA

32313029282726

TEA5767HL

10111213141516

XTAL1 RFI1

XTAL2 V

SWPORT1 RFI2

SWPORT2 RFGND

BUSENABLE TAGC

WRITE/READ LOOPSW

PILFIL I

PHASEFIL AGND

gain

24 23 22 21

ref

20 19

TMUTE

AFR

AFL

001aab573

TEA5767HL

Fig.2 Pin configuration.

7 FUNCTIONAL DESCRIPTION

7.1 Low-noise RF ampliﬁer

The LNA input impedance together with the LC RF input circuit defines an FM band filter. The gain of the LNA is controlled by the RF AGC circuit.

7.2 FM mixer

The FM quadrature mixer converts the FM RF (76 MHz to 108 MHz) to an IF of 225 kHz.

7.3 VCO

The varactor tuned LC VCO provides the Local Oscillator (LO) signal for the FM quadrature mixer. The VCO frequency range is 150 MHz to 217 MHz.

7.4 Crystal oscillator

The crystal oscillator can operate with a 32.768 kHz clock crystal or a 13 MHz crystal. The temperature drift of standard 32.768 kHz clock crystals limits the operational temperature range from −10 °C to +60 °C.

The PLL synthesizer can be clocked externally with a

32.768 kHz, a 6.5 MHz or a 13 MHz signal via pin XTAL2. The crystal oscillator generates the reference frequency

for:

• The reference frequency divider for the synthesizer PLL

• The timing for the IF counter

• The free-running frequency adjustment of the stereo

decoder VCO

• The centre frequency adjustment of the IF filters.

7.5 PLL tuning system

The PLL synthesizer tuning system is suitable to operate with a 32.768 kHz or a 13 MHz reference frequency generated by thecrystal oscillatoror applied to the ICfrom an external source. The synthesizer can also be clocked via pin XTAL2 at 6.5 MHz. The PLL tuning system can perform an autonomous search tuning function.

7.6 RF AGC

The RF AGC prevents overloading and limits the amount of intermodulation products created by strong adjacent channels.

2004 Sep 13 7

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

7.7 IF ﬁlter

Fully integrated IF filter.

7.8 FM demodulator

The FM quadrature demodulator has an integrated resonator to perform the phase shift of the IF signal.

7.9 Level voltage generator and analog-to-digital converter

TheFM IF analoglevel voltage isconvertedto 4 bits digital data and output via the 3-wire bus.

7.10 IF counter

The IF counter outputs a 7-bit count result via the 3-wire bus.

7.11 Soft mute

The low-pass filtered level voltage drives the soft mute attenuator at low RF input levels. The soft mute function can be switched off via the 3-wire bus.

7.12 MPX decoder

The PLL stereo decoder is adjustment-free. The stereo decoder can be switched to mono via the 3-wire bus.

7.13 Signal dependent mono to stereo blend

With a decreasing RF input level the MPX decoder blends from stereo to mono to limit the output noise. The continuousmono tostereo blend canalso be programmed viathe3-wire bus toanRFlevel depending switched mono tostereo transition.Stereo Noise Cancelling(SNC) can be switched off via the 3-wire bus.

7.14 Signal dependent AF response

Theaudio bandwidthwill be reducedwith a decreasingRF input level. This function can be switched off via the3-wire bus.

7.15 Software programmable ports

Two software programmableports (open-collector) canbe addressed via the 3-wire bus.

The port 1 (pin SWPORT1) function can be changed with write data byte 4 bit 0 (see Table 10). Pin SWPORT1 is then output for the ready flag of read byte 1.

TEA5767HL

8 3-WIRE BUS AND BUS-CONTROLLED

FUNCTIONS

8.1 3-wire bus speciﬁcation

The3-wire bus controls thewrite/read,clock and data lines and operates at a maximum clock frequency of 400 kHz.

Before any READ or WRITE operation the pin BUSENABLE has to be HIGH for at least 10 µs.

Hint: By using the standby bit the IC can be switched into a low current standby mode. In standby mode the IC must be in the WRITE mode. When the IC is switched to READ mode, during standby, the IC will hold the data line down. The standby current can be reduced by deactivating the bus interface (pin BUSENABLE LOW). If thebus interface is deactivated (pin BUSENABLE LOW) without the standby mode being programmed, the IC maintains normal operation, but is isolated from the clock and data line.

8.1.1 DATA TRANSFER Data sequence: byte 1, byte 2, byte 3, byte 4 and byte 5

(the data transfer has to be in this order). A positive edge at pin WRITE/READ enables the data

transfer into the IC. The data has to be stable at the positive edge of the clock. Data may change while the clock is LOWand is writteninto theIC on thepositive edge of the clock. Data transfer can be stopped after the transmission of new tuning information with the first two bytes or after each following byte.

A negative edge at pin WRITE/READ enables the data transfer from the IC. The WRITE/READ pin changeswhile the clock is LOW. With the negative edge at pin WRITE/READ the MSB of the first byte occurs at pin DATA.

The bits are shifted on the negative clock edge to pin DATA and can be read on the positive edge.

To do two consecutive read or write actions, pin WRITE/READ has to be toggled for at least one clock period. When a search tuning request is sent, the IC autonomously starts searching the FM band; the search direction and search stop level can be selected. When a station with a field-strength equal to or greater than the stop level is found, the tuning system stops and the ready flag bit is set to HIGH. When, during search, a band limit is reached, the tuning system stops at the band limit and the band limit flag bit is set to HIGH. The ready flag is also set to HIGH in this case.

2004 Sep 13 8

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

The software programmable output (SWPORT1) can be programmed to operate as a tuning indicator output. As long as the IC has not completed a tuning action, pin SWPORT1 remains LOW. The pin becomes HIGH, when a preset or search tuning is completed or when a band limit is reached.

The reference frequency divider of the synthesizer PLL is changed when the MSB in byte 5 is set to logic 1. The tuning system can then be clocked via pin XTAL2 at

6.5 MHz.

8.2 Writing data

50 %WRITE/READ

TEA5767HL

8.1.2 POWER-ON RESET At Power-on reset the mute is set, all other bits are

random.To initializethe IC allbytes have tobe transferred.

CLOCK

DATA

W(write)

su(clk)

50 % 50 %

su(write)

50 %

Fig.3 3-wire bus write data.

valid data

h(write)

mhc250

2004 Sep 13 9

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

Table 1 Write mode

DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5

Table 2 Format of 1st data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

MUTE SM PLL13 PLL12 PLL11 PLL10 PLL9 PLL8

Table 3 Description of 1st data byte bits

BIT SYMBOL DESCRIPTION

7 MUTE if MUTE = 1 then L and R audio are muted; if MUTE = 0 then L and R audio are not

muted

6SMSearch Mode: if SM = 1 then in search mode; if SM = 0 then not in search mode

5 to 0 PLL[13:8] setting of synthesizer programmable counter for search or preset

Table 4 Format of 2nd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLL7 PLL6 PLL5 PLL4 PLL3 PLL2 PLL1 PLL0

Table 5 Description of 2nd data byte bits

BIT SYMBOL DESCRIPTION

7 to 0 PLL[7:0] setting of synthesizer programmable counter for search or preset

Table 6 Format of 3rd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

SUD SSL1 SSL0 HLSI MS MR ML SWP1

Table 7 Description of 3rd data byte bits

BIT SYMBOL DESCRIPTION

7 SUD Search Up/Down: if SUD = 1 then search up; if SUD = 0 then search down

6 and 5 SSL[1:0] Search Stop Level: see Table 8

4 HLSI HIGH/LOW Side Injection: if HLSI = 1 then HIGH side LO injection; if HLSI = 0 then

LOW side LO injection 3MSMono to Stereo: if MS = 1 then forced mono; if MS = 0 then stereo ON 2MRMute Right: if MR = 1 then the right audio channel is muted and forced mono; if MR = 0

then the right audio channel is not muted 1MLMute Left: if ML = 1 then the left audio channel is muted and forced mono; if ML = 0

then the left audio channel is not muted 0 SWP1 Software programmable port 1: if SWP1 = 1 then port 1 is HIGH; if SWP1 = 0 then

port 1 is LOW

2004 Sep 13 10

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

Table 8 Search stop level setting

SSL1 SSL0 SEARCH STOP LEVEL

0 0 not allowed in search mode 0 1 low; level ADC output= 5 1 0 mid; level ADC output = 7 1 1 high; level ADC output = 10

Table 9 Format of 4th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

SWP2 STBY BL XTAL SMUTE HCC SNC SI

Table 10 Description of 4th data byte bits

BIT SYMBOL DESCRIPTION

7 SWP2 Software programmable port 2: if SWP2 = 1 then port 2 is HIGH; if SWP2 = 0 then

port 2 is LOW 6 STBY Standby: if STBY = 1 then in standby mode; if STBY = 0 then not in standby mode 5BLBand Limits: if BL = 1 then Japanese FM band; if BL = 0 then US/Europe FM band 4 XTAL if XTAL = 1 then f 3 SMUTE Soft MUTE: if SMUTE = 1 then soft mute is ON; if SMUTE = 0 then soft mute is OFF 2 HCC High Cut Control: if HCC = 1 then high cut control is ON; if HCC = 0 then high cut

control is OFF 1 SNC Stereo Noise Cancelling: if SNC = 1 then stereo noise cancelling is ON; if SNC = 0

then stereo noise cancelling is OFF 0SISearch Indicator: if SI = 1 then pin SWPORT1 is output forthe ready ﬂag; if SI = 0 then

pin SWPORT1 is software programmable port 1

= 32.768 kHz; if XTAL = 0 then f

xtal

= 13 MHz

xtal

Table 11 Format of 5th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLLREF DTC −−−−−−

Table 12 Description of 5th data byte bits

BIT SYMBOL DESCRIPTION

7 PLLREF if PLLREF = 1 then the 6.5 MHz reference frequency for the PLL is enabled;

if PLLREF = 0 then the 6.5 MHz reference frequency for the PLL is disabled 6 DTC if DTC = 1 then the de-emphasis time constant is 75 µs; if DTC = 0 then the

de-emphasis time constant is 50 µs

5to0 − not used; position is don’t care

2004 Sep 13 11

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

8.3 Reading data

W(read)

CLOCK

DATA

50 %WRITE/READ

su(clk)

50 %

LOW

h(out)

HIGH

50 %

d(out)

TEA5767HL

50 %

mhc249

Fig.4 3-wire bus read data.

Table 13 Read mode

DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5

Table 14 Format of 1st data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

RF BLF PLL13 PLL12 PLL11 PLL10 PLL9 PLL8

Table 15 Description of 1st data byte bits

BIT SYMBOL DESCRIPTION

7RFReady Flag: if RF = 1 then a station has been found or the band limit has been

reached; if RF = 0 then no station has been found 6 BLF Band Limit Flag: if BLF = 1 then the band limit has been reached; if BLF = 0 then the

band limit has not been reached

5 to 0 PLL[13:8] setting of synthesizer programmable counter after search or preset

2004 Sep 13 12

Page 13

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

Table 16 Format of 2nd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLL7 PLL6 PLL5 PLL4 PLL3 PLL2 PLL1 PLL0

Table 17 Description of 2nd data byte bits

BIT SYMBOL DESCRIPTION

7 to 0 PLL[7:0] setting of synthesizer programmable counter after search or preset

Table 18 Format of 3rd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

STEREO IF6 IF5 IF4 IF3 IF2 IF1 IF0

Table 19 Description of 3rd data byte bits

BIT SYMBOL DESCRIPTION

7 STEREO Stereo indication: if STEREO = 1 then stereo reception; if STEREO = 0 then mono

reception

6 to 0 PLL[13:8] IF counter result

Table 20 Format of 4th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

LEV3 LEV2 LEV1 LEV0 CI3 CI2 CI1 0

Table 21 Description of 4th data byte bits

BIT SYMBOL DESCRIPTION

7 to 4 LEV[3:0] level ADC output 3 to 1 CI[3:1] Chip Identiﬁcation: these bits have to be set to logic 0

0 − this bit is internally set to logic 0

Table 22 Format of 5th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

00000000

Table 23 Description of 5th data byte bits

BIT SYMBOL DESCRIPTION

7to0 − reserved for future extensions; these bits are internally set to logic 0

2004 Sep 13 13

Page 14

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

8.4 Bus timing Table 24 Digital levels and timing

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Digital inputs

Digital outputs

sink(L)

Timing (3-wire bus enabled)

clk

HIGH

LOW

W(write)

W(read)

su(clk)

h(out)

d(out)

su(write)

h(write)

HIGH-level input voltage 0.45V LOW-level input voltage − 0.2V

CCD

− V

CCD

LOW-level sink current 500 −µA LOW-level output voltage IOL= 500 µA − 450 mV

clock input frequency − 400 kHz clock HIGH time 1 −µs clock LOW time 1 −µs pulse width for write enable 1 −µs pulse width for read enable 1 −µs clock set-up time 300 − ns read mode data output hold time 10 − ns read mode output delay time − 400 ns write mode set-up time 100 − ns write mode hold time 100 − ns

2004 Sep 13 14

Page 15

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

9 LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCOTANK1

VCOTANK2

CCD

CCA

stg

amb

Notes

1. Machine model (R = 0 Ω, C = 200 pF).

2. Human body model (R = 1.5 kΩ, C = 100 pF).

VCO tuned circuit output voltage 1 −0.3 +8 V VCO tuned circuit output voltage 2 −0.3 +8 V digital supply voltage −0.3 +5 V analog supply voltage −0.3 +8 V storage temperature −55 +150 °C ambient temperature −10 +75 °C electrostatic handling voltage

for all pins except pin DATA note 1 −200 +200 V

note 2 −2000 +2000 V

for pin DATA note 1 −150 +200 V

note 2 −2000 +2000 V

10 THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th(j-a)

thermal resistance from junction to ambient in free air 80 K/W

2004 Sep 13 15

Page 16

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

11 DC CHARACTERISTICS

CCA=VVCOTANK1=VVCOTANK2=VCCD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply voltages; note 1

CCA

CC(VCO)

analog supply voltage 2.5 3.0 5.0 V voltage controlled

oscillator supply voltage

CCD

digital supply voltage 2.5 3.0 5.0 V

Supply currents

CCA

CC(VCO)

analog supply current operating

voltage controlled oscillator supply current

CCD

digital supply current operating

= 2.7 V; T

=25°C; unless otherwise speciﬁed.

amb

2.5 3.0 5.0 V

= 3 V 6.0 8.4 10.5 mA

CCA

= 5 V 6.2 8.6 10.7 mA

CCA

standby mode

=3V − 36 µA

CCA

=5V − 3.2 6.2 µA

CCA

operating

VCOTANK1=VVCOTANK2

= 3 V 560 750 940 µA = 5 V 570 760 950 µA

standby mode

VCOTANK1=VVCOTANK2

= 3 V 2.1 3.0 3.9 mA

CCD

= 5 V 2.25 3.15 4.05 mA

CCD

standby mode; V

CCD

=3V − 12 µA =5V − 1.2 2.2 µA

=3V bus enable line HIGH 30 56 80 µA bus enable line LOW 11 19 26 µA

standby mode; V

CCD

=5V bus enable line HIGH 50 78 105 µA bus enable line LOW 20 33 45 µA

2004 Sep 13 16

Page 17

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC operating points

CPOUT

XTAL1

XTAL2

PHASEFIL

PILFIL

VAFL

VAFR

TMUTE

MPXO

Vref

TIFC

LIMDEC1

LIMDEC2

Igain

RFI1

RFI2

TAGC

Note

1. V

CCA

unloaded DC voltage 0.1 − V

data byte 4 bit 4 = 1 1.64 1.72 1.8 V data byte 4 bit 4 = 0 1.68 1.75 1.82 V data byte 4 bit 4 = 1 1.64 1.72 1.8 V data byte 4 bit 4 = 0 1.68 1.75 1.82 V

0.4 1.2 V

0.65 0.9 1.3 V fRF= 98 MHz; VRF= 1 mV 720 850 940 mV fRF= 98 MHz; VRF= 1 mV 720 850 940 mV VRF= 0 V 1.5 1.65 1.8 V fRF= 98 MHz; VRF= 1 mV 680 815 950 mV

1.45 1.55 1.65 V

1.34 1.44 1.54 V

1.86 1.98 2.1 V

480 530 580 mV

0.93 1.03 1.13 V

0.93 1.03 1.13 V VRF= 0 V 1 1.57 2 V

, V

CC(VCO)

and V

must not differ more than 200 mV.

CCD

CC(VCO)

− 0.4 V

CCA

− 0.1 V

2004 Sep 13 17

Page 18

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

12 AC CHARACTERISTICS

CCA=VVCOTANK1=VVCOTANK2=VCCD

in RMS; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage controlled oscillator

osc

oscillator frequency 150 − 217 MHz

Crystal oscillator

IRCUIT INPUT: PIN XTAL2

V R

i(osc)

oscillator input voltage oscillator externally clocked 140 − 350 mV input resistance oscillator externally clocked

input capacitance oscillator externally clocked

CRYSTAL: 32.768 kHz f

∆f/f C

∆fr/f

r(25 °C)

series resonance frequency data byte 4 bit 4 = 1 − 32.768 − kHz frequency deviation −20 × 10−6− +20 × 10 shunt capacitance −−3.5 pF series resistance −−80 kΩ

temperature drift −10 °C<T CRYSTAL:13MHZ f

∆f/f C

mot

∆fr/f

r(25 °C)

series resonance frequency data byte 4 bit 4 = 0 − 13 − MHz

frequency deviation −30 × 10−6− +30 × 10

shunt capacitance −−4.5 pF

motional capacitance 1.5 − 3.0 fF

series resistance −−100 Ω

temperature drift −40 °C<T

Synthesizer

= 2.7 V; T

=25°C; measured in the circuit of Fig.7; all AC values are given

amb

data byte 4 bit 4 = 0 2 3 4 kΩ data byte 4 bit 4 = 1 230 330 430 kΩ

data byte 4 bit 4 = 0 3.9 5.6 7.3 pF data byte 4 bit 4 = 1 5 6 7 pF

< +60 °C −50 × 10−6− +50 × 10

amb

< +85 °C −30 × 10−6− +30 × 10

amb

−6

PROGRAMMABLE DIVIDER; note 1 N

prog

programmable divider ratio data byte 1 = XX111111;

data byte 2 = 11111110 data byte 1 = XX010000;

data byte 2 = 00000000

∆N

step

programmable divider step

size REFERENCE FREQUENCY DIVIDER N

ref

crystal oscillator divider

ratio

data byte 4 bit 4 = 0 − 260 − data byte 5 bit 7 = 1;

data byte 4 bit 4 = 0 data byte 4 bit 4 = 1 − 1 −

2004 Sep 13 18

−−8191

2048 −−

− 1 −

− 130 −

Page 19

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CHARGE PUMP: PIN CPOUT I

sink

source

IF counter

precount

count(IF)

RES

count(IF)

count

Pins DATA, CLOCK, WRITE/READ and BUSENABLE

Software programmable ports

charge pump peak sink

current

charge pump peak source

current

RF input voltage for correct

0.2V<V <V

VCOTANK2

VCO>fref

0.2V<V <V

VCOTANK2

VCO<fref

CPOUT

− 0.2 V;

× N

CPOUT

− 0.2 V;

× N

− 0.5 −µA

prog

−−0.5 −µA

prog

− 12 18 µV

IF count

IF counter length − 7 − bit

IF counter prescaler ratio − 64 −

IF counter period f

IF counter resolution f

IF counter result for search

tuning stop

= 32.768 kHz − 15.625 − ms

xtal

= 13 MHz − 15.754 − ms

xtal

= 32.768 kHz − 4.096 − kHz

xtal

= 13 MHz − 4.0625 − kHz

xtal

= 32.768 kHz 31 − 3E HEX

xtal

= 13 MHz 32 − 3D HEX

xtal

input resistance 10 −− MΩ

PIN SWPORT1 I

sink(max)

leak(max)

maximum sink current data byte 3 bit 0 = 0;

maximum leakage current data byte 3 bit 0 = 1;

PIN SWPORT2 I

sink(max)

leak(max)

maximum sink current data byte 4 bit 7 = 0;

maximum leakage current data byte 4 bit 7 = 1;

FM signal channel

FM RF INPUT R

input resistance at pins

RFI1 and RFI2 to RFGND C

input capacitance at pins

RFI1 and RFI2 to RFGND

data byte 4 bit 0 = 0; V

SWPORT1

< 0.5 V

<5V

< 0.5 V

<5V

500 −− µA

−1 − +1 µA

500 −− µA

−1 − +1 µA

75 100 125 Ω

2.5 4 6 pF

2004 Sep 13 19

Page 20

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IP3

out

RF AGC

RF1

IF ﬁlter

+200

−200

+100

−100

IR image rejection f

FM IF level detector and mute voltage

∆V

step

PIN TMUTE V

level

level(slope)

RF sensitivity input voltage fRF= 76 MHz to 108 MHz;

∆f = 22.5 kHz; f

mod

= 1 kHz;

− 2 3.5 µV

(S+N)/N = 26 dB; de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz

in-band 3rd-order intercept

point related to V

RFI1-RFI2

∆f1= 200 kHz; ∆f2= 400 kHz; f

= 76 MHz to 108 MHz

tune

81 84 − dBµV

(peak value)

out-band 3rd-order

intercept point related to

RFI1-RFI2

(peak value)

RF input voltage for start of

AGC

∆f1= 4 MHz; ∆f2= 8 Hz; f

= 76 MHz to 108 MHz

tune

= 93 MHz; f

RF1

=50dBµV;

RF2

∆

TMUTE

----------------------V

RF1

RF2

14 mV

-------------------3 dBµV

= 98 MHz;

; note 2

82 85 − dBµV

66 72 78 dBµV

IF ﬁlter centre frequency 215 225 235 kHz IF ﬁlter bandwidth 85 94 102 kHz HIGH side 200 kHz

selectivity

∆f = +200 kHz; f

= 76 MHz to 108 MHz;

tune

39 43 − dB

note 3

LOW side 200 kHz selectivity

∆f=−200 kHz; f

= 76 MHz to 108 MHz;

tune

32 36 − dB

note 3

HIGH side 100 kHz selectivity

∆f = +100 kHz; f

= 76 MHz to 108 MHz;

tune

812− dB

note 3

LOW side 100 kHz selectivity

∆f=−100 kHz; f

= 76 MHz to 108 MHz;

tune

812− dB

note 3

= 76 MHz to 108 MHz;

tune

24 30 − dB

VRF=50dBµV

RF input voltage for start of

read mode data byte 4 bit4=1 2 3 5 µV

level ADC level ADC step size 2 3 5 dB

level output DC voltage VRF=0µV 1.55 1.65 1.80 V

VRF=3µV 1.60 1.70 1.85 V

slope of level voltage VRF=10µV to 500 µV 150 165 180

--------------20 dB

output resistance 280 400 520 kΩ

2004 Sep 13 20

Page 21

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

FM demodulator: pin MPXO

MPXO

(S+N)/N maximum signal plus

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;

sink

Soft mute

mute

MPX decoder

; V

AFL

; R

AFL

sink(AFL)

sink(AFR)

MPXIN(max)

AFL/VAFR

cs(stereo)

demodulator output voltage VRF= 1 mV; L = R;

∆f = 22.5 kHz; f

mod

= 1 kHz;

60 75 90 mV

de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz

noise-to-noise ratio

VRF= 1 mV; L = R; ∆f = 22.5 kHz; f

mod

= 1 kHz;

54 60 − dB

de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz

− 0.5 1.5 %

= 1 kHz;

mod

de-emphasis = 75 µs

AM suppression VRF= 300 µV; L=R;

∆f = 22.5 kHz; f

mod

= 1 kHz;

40 −− dB

m = 0.3; de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz

demodulator output

−−500 Ω

resistance demodulator output sink

−−30 µA

current

RF input voltage for soft mute start

mute attenuation VRF=1µV; L = R;

= 3 dB; data byte 4

mute

bit3=1

∆f = 22.5 kHz; f

mod

3510µV

10 20 30 dB

= 1 kHz de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz; data byte 4 bit 3 = 1

left and right audio

AFR

frequency output voltage

VRF= 1 mV; L = R; ∆f = 22.5 kHz; f

mod

60 75 90 mV

= 1 kHz; de-emphasis = 75 µs

left and right audio

AFR

−−50 Ω

frequency output resistance

;

left and right audio

170 −− µA frequency output sink current

input overdrive margin THD < 3 % 4 −− dB left and right audio

frequency output voltage difference

stereo channel separation VRF= 1 mV; R = L = 0 or R = 0

VRF= 1 mV;L = R; ∆f = 75 kHz; f

= 1 kHz;

mod

de-emphasis = 75 µs

−1 − +1 dB

24 30 − dB

and L = 1 including 9 % pilot; ∆f = 75 kHz; f

mod

= 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 1

2004 Sep 13 21

Page 22

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(S+N)/N maximum signal plus

noise-to-noise ratio

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;

∆f

pilot

pilot suppression measured at pins V

AFL

and V

AFR

stereo pilot frequency deviation

∆

pilot1

--------------- f

∆

pilot2

pilot switch hysteresis VRF= 1 mV 2 −− dB

VRF= 1 mV; L = R; ∆f = 22.5 kHz; f

mod

= 1 kHz;

54 60 − dB

de-emphasis = 75 µs; BAF= 300 Hz to 15 kHz

− 0.4 1 %

= 1 kHz;

mod

de-emphasis = 75 µs related to ∆f = 75 kHz;

= 1 kHz;

mod

40 50 − dB

de-emphasis = 75 µs VRF= 1 mV; read mode;

data byte 3

bit7=1 − 3.6 5.8 kHz bit7=0 1 3 − kHz

HIGH CUT CONTROL TC

de-em

de-emphasis time constant VRF=1mV

MONO TO STEREO BLEND CONTROL

cs(stereo)

stereo channel separation VRF=45µV;R=L=0orR=0

MONO TO STEREO SWITCHED

cs(stereo)

stereo channel separation switching from mono to stereo with increasing RF input level

cs(stereo)

stereo channel separation switching from stereo to mono with decreasing RF input level

data byte 5 bit 6 = 0 38 50 62 µs data byte 5 bit 6 = 1 57 75 93 µs

VRF=1µV

data byte 5 bit 6 = 0 114 150 186 µs data byte 5 bit 6 = 1 171 225 279 µs

41016dB and L = 1 including 9 % pilot; ∆f = 75 kHz; f

mod

= 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 1

VRF= 1 mV; R = L = 0 or R = 0

24 −− dB and L = 1 including 9 % pilot; ∆f = 75 kHz; f

mod

= 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 0

VRF=20µV;R=L=0orR=0

−−1dB and L = 1 including 9 % pilot; ∆f = 75 kHz; f

mod

= 1 kHz; data byte 3 bit 3 = 0; data byte 4 bit 1 = 0

2004 Sep 13 22

Page 23

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

US-DRIVEN MUTE FUNCTIONS

Tuning mute

mute

mute(L)

mute(R)

Notes

1. Calculation of this 14-bit word can be done as follows: formula for HIGH side injection: ; formula for LOW side injection: where:

N = decimal value of PLL word f

= the intermediate frequency [Hz] = 225 kHz

ref

when externally clocked with 6.5 MHz. Example for receiving a channel at 100 MHz with HIGH side injection: .

The PLL word becomes 2FCAH.

2. V

3. LOWside andHIGH side selectivitycan be switchedby changing themixer from HIGHside to LOWside LOinjection.

and V

AFL

muting depth data byte 3 bit 1 = 1;

AFL

muting depth data byte 3 bit 2 = 1;

AFR

muting depth data byte 1 bit 7 = 1 −−−60 dB

AFR

−−−80 dB

fAF= 1 kHz; R

load(L)

<30kΩ

−−−80 dB

fAF= 1 kHz; R

= N

----------------------------------

+()×

RFfIF

ref

load(R)

<30kΩ

= the wanted tuning frequency [Hz]

= the reference frequency [Hz] = 32.768 kHz for the 32.768 kHz crystal; f

in Fig.7 is replaced by V

RF1+VRF2

. The radio is tuned to 98 MHz (HIGH side injection).

--------------------------------- -

= 50 kHz for the 13 MHz crystal or

ref

4 100

------------------------------------------------------------------

×10 2253×10+()×

32768

–()×

RFfIF

ref

12234==

2004 Sep 13 23

Page 24

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

AFL

, V

(dB)

AFR

−

(1) (2)

(3)

(4) (5)

(6)

handbook, full pagewidth

TEA5767HL

MHC247

THD

(%)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

−

−3

(1) Mono signal; soft mute on. (2) Left channel with modulation left; SNC on. (3) Right channel with modulation left; SNC on. (4) Noise in mono mode; soft mute on. (5) Noise in stereo mode; SNC on. (6) Total harmonic distortion; ∆f = 75 kHz; L = R; f

−2

−1

mod

= 1 kHz.

Fig.5 FM characteristics 1.

10 10

(mV)

2004 Sep 13 24

Page 25

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

AFL

, V

(dB)

AFR

−

(1)

(2)

(3)

handbook, full pagewidth

TEA5767HL

MHC309

TMUTE

(V)

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

−

−3

(1) Mono signal; no soft mute. (2) Noise in mono mode; no soft mute. (3) Level voltage; V

CCA

= 2.7 V.

−2

−1

Fig.6 FM characteristics 2.

10 10

(mV)

1.4

2004 Sep 13 25

Page 26

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

13 INTERNAL PIN CONFIGURATION

PIN SYMBOL EQUIVALENT CIRCUIT

1 CPOUT

270 Ω

2 VCOTANK1 3 VCOTANK2

120 Ω

TEA5767HL

MHC251

120 Ω

MHC25

CC(VCO)

5 DGND 6V

CCD

7 DATA

8 CLOCK

270 Ω

MHC25

2004 Sep 13 26

Page 27

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

PIN SYMBOL EQUIVALENT CIRCUIT

9 WRITE/READ

270 Ω

10 BUSENABLE

150 Ω

11 SWPORT1

150 Ω

TEA5767HL

MHC25

510

MHC25

12 SWPORT2

13 XTAL1 14 XTAL2

15 PHASEFIL

13 14

150 Ω

MHC25

MHC259

2004 Sep 13 27

MHC26

Page 28

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

PIN SYMBOL EQUIVALENT CIRCUIT

16 PILFIL

270 Ω

17 V

AFL

10 Ω

TEA5767HL

MHC261

MHC262

18 V

AFR

19 TMUTE

20 MPXO

10 Ω

MHC263

1 kΩ

MHC26

150 Ω

2004 Sep 13 28

MHC265

Page 29

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

PIN SYMBOL EQUIVALENT CIRCUIT

21 V

22 TIFC

ref

MHC266

40 kΩ

MHC26

TEA5767HL

23 LIMDEC1

24 LIMDEC2

25 I

gain

270 Ω

MHC26

MHC27

26 AGND 27 V

CCA

2004 Sep 13 29

Page 30

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

PIN SYMBOL EQUIVALENT CIRCUIT

28 RFI1 29 RFGND 30 RFI2

31 TAGC

32 LOOPSW

28 30

TEA5767HL

MHC271

MHC27

14 APPLICATION INFORMATION Table 25 Component list for Figs 1 and 7

COMPONENT PARAMETER VALUE TOLERANCE TYPE MANUFACTURER

R1 resistor with low temperature coefﬁcient 18 kΩ±1 % RC12G Philips D1 and D2 varicap for VCO tuning −− BB202 Philips L1 RF band ﬁlter coil 120 nH ±2% Q L2 and L3 VCO coil 33 nH ±2% Q

min min

=40

=40 XTAL13 13 MHz crystal −− NX4025GA C

pull

pulling capacitor for NX4025GA 10 pF −

XTAL32.768 32.768 kHz crystal −−

2004 Sep 13 30

Page 31

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2004 Sep 13 31

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

handheld applications

47 nF 47 nF 33 nF

LIMDEC2

24 23 22 21 20

22 nF

CCA

4.7 Ω

100 pF

40 Ω

27 pF 47 pF

22 µF

4.7 nF LOOPSW

gain

AGND

CCA

RFI1

RFGND

RFI2

TAGC

I/Q-MIXER

1st FM

28 29

TUNING SYSTEM

12 CPOUT VCOTANK2 V

39 nF10 nF

10 kΩ

100 kΩ

VCO

VCOTANK1

D1L3D2

AGC

GAIN

STABILIZATION

RESONANCE

AMPLIFIER

IF CENTRE

FREQUENCY

ADJUST

programmable divider output

reference frequency divider output

CC(VCO)

LIMDEC1 TIFC V

LIMITER

LEVEL

ADC

5678 DGND CLOCK

12 Ω

CCD

47 nF

DEMODULATOR

COUNTER

ref

MUX

3-WIRE BUS

CCD

22 nF

TEA5767HL

PROGRAMMABLE

DATAV

ref

POWER

SUPPLY

SOFTWARE

PORT

pilot

mono

MPXO TMUTE

SOFT MUTE

MPX

DECODER

33 nF

AFR

19 18 17

SDS

CRYSTAL

OSCILLATOR

mhc246

AFL

15 14

12 11

PILFIL

33 kΩ

PHASEFIL XTAL2

pull

XTAL1

SWPORT2 SWPORT1

BUSENABLE

WRITE/READ

1 nF

22 nF

(1)

10 kΩ

comp

(1)

32.768 kHz or

13 MHz

CCA

(1) C

comp

and C

data depends on crystal specification.

pull

47 Ω

22 nF

CC(VCO)

TEA5767HL

Fig.7 Test circuit.

Page 32

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

15 PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm

24 17

TEA5767HL

SOT358-1

pin 1 index

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A1A2A3bpcE

max.

0.20

1.45

1.6

0.05

1.35

0.25

0.4

0.18

0.3

0.12

0 2.5 5 mm

(1) (1)(1)

7.1

6.9

scale

(1)

eHELL

9.15

0.8

8.85

9.15

8.85

0.75

0.45

detail X

0.25 0.11 0.2

0.9

0.5

Zywv θ

0.9

0.5

(A )

OUTLINE VERSION

SOT358 -1 136E03 MS-026

IEC JEDEC JEITA

REFERENCES

2004 Sep 13 32

EUROPEAN

PROJECTION

ISSUE DATE

00-01-19 03-02-25

Page 33

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for handheld applications

16 SOLDERING

16.1 Introduction to soldering surface mount packages

Thistext gives averybriefinsight to acomplextechnology. A more in-depth account of soldering ICs can be found in our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011). There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for certainsurface mount ICs, butitis not suitable forfinepitch SMDs. In these situations reflow soldering is recommended.

16.2 Reﬂow soldering

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied tothe printed-circuit boardby screen printing,stencillingor pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing.

Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method.

Typical reflow peak temperatures range from 215 °C to 270 °C depending onsolder paste material.The top-surface temperature of the packages should preferably be kept:

• below 225 °C (SnPb process) or below 245 °C (Pb-free

process) – for all BGA, HTSSON..T and SSOP..T packages – for packages with a thickness ≥ 2.5 mm – for packages with a thickness < 2.5 mm and a

volume ≥ 350 mm3 so called thick/large packages.

• below 240 °C (SnPb process) or below 260 °C (Pb-free

process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

TEA5767HL

To overcome these problems the double-wave soldering method was specifically developed.

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

• Forpackages with leads onfoursides, the footprint must be placedat a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.

During placement and before soldering,the packagemust be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

16.4 Manual soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 °C and 320 °C.

16.3 Wave soldering

Conventional single wave soldering is not recommended forsurface mount devices (SMDs)orprinted-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

2004 Sep 13 33

Page 34

Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

16.5 Suitability of surface mount IC packages for wave and reﬂow soldering methods

(1)

(3)

, TFBGA,

not suitable suitable

BGA, HTSSON..T

PACKAGE

(3)

, LBGA, LFBGA, SQFP, SSOP..T

VFBGA, XSON DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON,

not suitable

HTQFP, HTSSOP, HVQFN, HVSON, SMS

(5)

PLCC

, SO, SOJ suitable suitable LQFP, QFP, TQFP not recommended SSOP, TSSOP, VSO, VSSOP not recommended CWQCCN..L

(8)

, PMFP

(9)

, WQCCN..L

(8)

not suitable not suitable

Notes

1. Formore detailed informationon the BGApackagesrefer to the

“(LF)BGAApplication Note”

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through morethan one soldering cycle or subjected toinfrared reflow soldering with peaktemperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible.

4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface.

5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners.

6. Wave soldering is suitablefor LQFP, QFP and TQFPpackages with a pitch (e) larger than0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request.

9. Hot bar soldering or manual soldering is suitable for PMFP packages.

SOLDERING METHOD

WAVE REFLOW

(4)

(5)(6) (7)

suitable

suitable suitable

(AN01026);order a copy

(2)

2004 Sep 13 34

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Philips Semiconductors Product speciﬁcation

Low-power FM stereo radio for

TEA5767HL

handheld applications

17 DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determinesthe datasheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

DEFINITION

18 DEFINITIONS Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values definition  Limiting values given arein accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or atanyother conditions abovethosegiven in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationor warranty thatsuchapplicationswill be suitable for the specified use without further testing or modification.

19 DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expectedto result in personal injury.Philips Semiconductorscustomersusing or selling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the productis infull production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2004 Sep 13 35

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Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofﬁces addresses send e-mail to: [email protected].

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R30/03/pp36 Date of release:2004 Sep 13 Document order number: 9397 750 13532

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