Besides typical application areas, i.e. adapters and
chargers, the device can be used in TV and monitor
supplies and all applications that demand an efficient and
cost-effective solution up to 250 W.
1
2
3
TEA1533T
4
TEA1533AT
5
6
7
14
13
12
11
10
9
8
2002 Aug 232
MGU499
Fig.1 Basic application diagram.
Page 3
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
GENERAL DESCRIPTION
The GreenChip
Switched Mode Power Supply (SMPS) control ICs
operatingdirectly from the rectified universalmains.A high
level of integration leads to a cost effective power supply
with a very low number of external components.
The special built-in green functions allow the efficiency to
be optimum at all power levels. This holds for
quasi-resonant operation at high power levels, as well as
fixed frequency operation with valley switching at medium
power levels. At low power (standby) levels, the system
operates at a reduced frequency and with valley detection.
(1) GreenChip is a trademark of Koninklijke Philips
Electronics N.V.
ORDERING INFORMATION
TYPE
NUMBER
TEA1533TSO14plastic small outline package; 14 leads; body width 3.9 mmSOT108-1
TEA1533AT
(1)
II is the second generation of green
NAMEDESCRIPTIONVERSION
The proprietary high voltage BCD800 process makes
direct start-up possible from the rectified mains voltage in
an effective and green way. A second low voltage
BICMOS IC is used for accurate, high-speed protection
functions and control.
Highly efficient and reliable supplies can easily be
designed using the GreenChipII control IC.
PACKAGE
TEA1533T; TEA1533AT
2002 Aug 233
Page 4
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2002 Aug 234
ok, full pagewidth
BLOCK DIAGRAM
Philips SemiconductorsProduct specification
GreenChip
V
CC
GND
CTRL
2
I
prot(CTRL)
M-level
−1
burst
detect
S1
3
6
2.5 V
SUPPLY
MANAGEMENT
internal
FREQUENCY
UVLO start
supply
VOLTAGE
CONTROLLED
OSCILLATOR
CONTROL
POWER-ON
RESET
OVER-
TEMPERATURE
PROTECTION
DEMAG
SHORT
PROTECTION
UVLO
V
< 4.5 V
CC
or UVLO
(TEA1533AT)
LOGIC
UP/DOWN
COUNTER
LOGIC
SQ
R
Q
SQ
R
Q
START-UP
CURRENT SOURCE
OCP
VALLEY
100
mV
50
mV
VOLTAGE
PROTECTION
LEB
blank
OCP
OVER-
DRIVER
I
prot(DEM)
clamp
start
soft
S2
14
DRAIN
TM
12, 13
I
ss
0.5 V
HVS
n.c.
7
DEM
11
DRIVER
9
I
sense
II SMPS control IC
TEA1533T; TEA1533AT
TEA1533T
TEA1533AT
MAXIMUM
ON-TIME
PROTECTION
Fig.2 Block diagram.
short
winding
0.88 V
OVERPOWER
PROTECTION
MGU500
Page 5
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
PINNINGFUNCTIONAL DESCRIPTION
SYMBOL PINDESCRIPTION
n.c.1not connected
V
CC
2supply voltage
GND3ground
The TEA1533 is the controller of a compact flyback
converter, and is situated at the primary side. An auxiliary
winding of the transformer provides demagnetization
detection and powers the IC after start-up.
The TEA1533 can operate in multi modes (see Fig.4).
n.c.4not connected
n.c.5not connected
CTRL6control input
DEM7input from auxiliary winding for
demagnetization timing, overvoltage
and overpower protection
handbook, halfpage
f
(kHz)
VCOfixedquasi resonant
175
n.c.8not connected
I
sense
9programmable current sense input
n.c.10not connected
DRIVER11gate driver output
25
HVS12high voltage safety spacer, not
connected
HVS13high voltage safety spacer, not
connected
Fig.4 Multi modes operation.
DRAIN14drain of external MOS switch, input for
start-up current and valley sensing
The next converter stroke is started only after
demagnetization of the transformer current (zero current
switching), while the drain voltage has reached the lowest
voltage to prevent switching losses (green function). The
primary resonant circuit of the primary inductance and
draincapacitorensuresthis quasi-resonant operation. The
design can be optimized in such a way that zero voltage
handbook, halfpage
n.c.
V
CC
GND
n.c.
n.c.
CTRL
DEM
1
2
3
4
TEA1533AT
5
6
7
TEA1533T
MGU501
14
13
12
11
10
9
8
DRAIN
HVS
HVS
DRIVER
n.c.
I
sense
n.c.
switching can be reached over almost the universal mains
range.
To prevent very high frequency operation at lower loads,
the quasi-resonant operation changes smoothly in fixed
frequency PWM control.
At very low power (standby) levels, the frequency is
controlled down, via the VCO, to a minimum frequency of
approximately 25 kHz.
Start-up, mains enabling operation level and
undervoltage lock-out
MGU508
P (W)
Fig.3 Pin configuration.
2002 Aug 235
Initially, the IC is self supplying from the rectified mains
voltage via pin DRAIN (see Figs 11 and 12). Supply
capacitor C
is charged by the internal start-up current
VCC
source to approximately 4 V or higher, depending on the
voltage on pin DRAIN.
Page 6
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
Once the drain voltage exceeds the M-level
(mains-dependent operation-enabling level), the start-up
current source will continue charging capacitor C
(switch S1 will be opened); see Fig.2. The IC will activate
the converter as soon as the voltage on pin VCC passes
the V
level. The IC supply is taken over by the
CC(start)
auxiliary winding assoon as the output voltage reaches its
intended level and the IC supply from the mains voltage is
subsequently stopped for high efficiency operation (green
function).
The moment the voltage on pin VCC drops below the
undervoltage lock-out level, the IC stops switching and
enters a safe restart from the rectified mains voltage.
Inhibiting the auxiliary supply by external means causes
the converter to operate in a stable, well defined burst
mode.
Supply management
All (internal) reference voltages are derived from a
temperature compensated, on-chip band gap circuit.
VCC
V
handbook, halfpage
sense(max)
Fig.5 V
handbook, halfpage
(kHz)
0.52 V
sense(max)
f
175
TEA1533T; TEA1533AT
MGU233
MGU509
175 kHz
V
CTRL
CTRL
.
1 V
(typ)
1.5 V
(typ)
voltage as function of V
Current mode control
Current mode control is used for its good line regulation
behaviour.
The ‘on-time’ iscontrolled by theinternally inverted control
voltage, which is compared with the primary current
information. The primary current is sensed across an
external resistor. The driver output is latched in the logic,
preventing multiple switch-on.
The internal control voltage is inverselyproportional to the
external control pin voltage, with an offset of 1.5 V. This
means that a voltage range from 1 to 1.5 V on pin CTRL
will result in an internal control voltage range from
0.5 to 0 V (a high external control voltage results in a low
duty cycle).
Oscillator
The maximum fixed frequency of the oscillator isset by an
internal current source and capacitor. The maximum
frequency is reduced once the control voltage enters the
VCO control window. Then, the maximum frequency
changeslinearly with thecontrol voltage untilthe minimum
frequency is reached (see Figs 5 and 6).
25
V
level
VCO
2
level
sense(max) (V)
1
sense(max)
VCO
Fig.6 VCO frequency as function of V
Cycle skipping
At very low power levels, a cycle skipping mode will be
activated. A high control voltage will reduce the switching
frequency to a minimum of 25 kHz. If the voltage on the
control pin is raised even more, switch-on of the external
power MOSFET will be inhibited until the voltage on the
control pin has dropped to a lower value again (see Fig.7).
For system accuracy it is not the absolute voltage on the
control pin that will trigger the cycle skipping mode, but a
signal derived from the internal VCO will be used.
Remark 1:If the no-loadrequirementof the systemissuch
that the output voltage can be regulated to its intended
level at a switching frequency of 25 kHz or above, the
cycle skipping mode will not be activated.
2002 Aug 236
Remark 2: As switching will stop when the voltage on the
control pin is raised above a certain level, the burst mode
has to beactivated by amicrocontroller or any other circuit
sending a 30 µs, 16 mA pulse to the control input
(pin CTRL) of the IC.
Page 7
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
handbook, full pagewidth
CTRL
1.5 V − V
CTRL
X2
V
x
150 mV
current
comparator
V
I
DRIVER
OSCILLATOR
DRIVER
I
sense
TEA1533T; TEA1533AT
f
osc
f
max
f
min
cycle
skipping
1
0
dV
2
dV
1
150
Vx (mV)
MGU510
Vx (mV)
The voltage levels dV1 and dV2 are fixed in the IC to 50 mV (typical) and 18 mV (typical) respectively.
Fig.7 The cycle skipping circuitry.
Demagnetization
The system will be in discontinuous conduction mode all
the time. The oscillator will not start a new primary stroke
until the secondary stroke has ended.
Demagnetization features a cycle-by-cycle output
short-circuit protection by immediately lowering the
frequency (longer off-time), thereby reducing the power
Minimum and maximum ‘on-time’
The minimum ‘on-time’ of the SMPS is determined by the
Leading Edge Blanking (LEB) time. The IC limits the
‘on-time’ to 50 µs. When the system desires an ‘on-time’
longer than 50 µs, a fault condition is assumed (e.g.
removed Ciin Fig.11), the IC will stop switching and enter
the safe restart mode.
level.
Demagnetizationrecognition is suppressedduringthe first
t
time. This suppression may be necessary in
suppr
applications where the transformer has a large leakage
inductance, at low output voltages and at start-up.
If pin DEM is open-circuit or not connected, a fault
condition is assumed and the converter will stop operating
immediately. Operation will recommence as soon as the
fault condition is removed.
If pin DEM is shorted to ground, again a fault condition is
assumed and the converter will stop operating after the
first stroke. The converter will subsequently enter the safe
restart mode. This situation will persist until the
short-circuit is removed.
2002 Aug 237
Page 8
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
OverVoltage Protection (OVP)
An OVP mode is implemented in the GreenChip series.
This works for the TEA1533 by sensing the auxiliary
voltage via the current flowing into pin DEM during the
secondary stroke. The auxiliary winding voltage is a
well-defined replica of the output voltage. Any voltage
spikes are averaged by an internal filter.
Ifthe output voltage exceedstheOVP trip level, aninternal
counter starts counting subsequent OVP events. The
counter has been added to prevent incorrect OVP
detections which might occur during ESD or lightning
events. If the output voltage exceeds the OVP trip level a
fewtimes and notagain in asubsequent cycle, theinternal
counter will count down with twice the speed compared
with counting up. However, when typical 10 cycles of
subsequent OVP events are detected, the IC assumes a
true OVP and the OVP circuit switches the power
MOSFET off. Next, the controller waits until the UVLO
level is reached on pin VCC. When VCC drops to UVLO,
capacitor C
Regarding the TEA1533T, this IC will not start switching
again. Subsequently, VCC will drop again to the UVLO
level, etc. Operation only recommences when the V
voltage drops below a level of approximately 4.5 V
(practically when V
period).
will be recharged to the V
VCC
has been disconnectedfor a short
mains
start
level.
CC
TEA1533T; TEA1533AT
Valley switching
A new cycle starts when the power MOSFET is switched
on (see Fig.8). After the ‘on-time’ (which is determined by
the ‘sense’ voltage and the internal control voltage), the
switchis opened andthesecondary stroke starts.Afterthe
secondary stroke, the drain voltage shows an oscillation
As soon as the oscillator voltage is high again and the
secondary stroke has ended, the circuit waits for the
lowest drain voltage before starting a new primary stroke.
This method is called valley detection. Figure 8 shows the
drain voltage together with the valley signal, the signal
indicating the secondary stroke and the oscillator signal.
In an optimum design, the reflected secondary voltage on
the primary side will force the drain voltage to zero. Thus,
zero voltage switching is very possible, preventing large
1
capacitive switching losses and
P
-- -
2
allowing high frequency operation, which results in small
and cost effective inductors.
1
C
×()×
p
d
2
CV
×f××=
Regarding the TEA1533AT, switching starts again (safe
restart mode) when the V
level is reached. This
start
process is repeated as long as the OVP condition exists.
Theoutput voltage V
can be set by the demagnetization resistor, R
V
N
----------N
=
o OVP()
s
I
(OVP)(DEM)RDEM
aux
×V
where Nsis the number of secondary turnsand N
atwhich the OVPfunctiontrips,
o(OVP)
:
DEM
+{}
clamp(DEM)(pos)
is the
aux
number of auxiliary turns of the transformer.
Current I
(OVP)(DEM)
The value of R
is internally trimmed.
can be adjusted to the turns ratio of the
DEM
transformer, thus making an accurate OVP possible.
2002 Aug 238
Page 9
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
handbook, full pagewidth
drain
valley
secondary
stroke
primary
stroke
secondary
stroke
TEA1533T; TEA1533AT
secondary
ringing
oscillator
A: Start of new cycle at lowest drain voltage.
B: Start of new cycle in a classical PWM system at high drain voltage.
Fig.8 Signals for valley switching.
OverCurrent Protection (OCP)
The cycle-by-cycle peak drain current limit circuit uses the
externalsource resistor to measurethecurrent accurately.
This allows optimum size determination of the transformer
core (cost issue). The circuit is activated after the leading
edge blanking time, t
. The OCP circuit limits the ‘sense’
leb
voltage to an internal level.
OverPower Protection (OPP)
BA
MGU235
N
where:
N
=
-----------N
aux
p
The current information is used to adjust the peak drain
current, which is measured via pin I
. The internal
sense
compensation is such that an almost mains independent
maximum output power can be realized.
The OPP curve is given in Fig.9.
Duringthe primary stroke,the rectified mainsinput voltage
is measured by sensing the current drawn from pin DEM.
This current is dependent on the mains voltage, according
to the following formula:
I
DEM
V
≈≈
-------------- R
DEM
aux
×
NV
mains
-------------------------R
DEM
2002 Aug 239
Page 10
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
MGU236
handbook, halfpage
−100 µA
(typ)
I
DEM
−24 µA
(typ)
Fig.9 OPP correction curve.
Short winding protection
After the leading edge blanking time, the short winding
protection circuit is activated. If the ‘sense’ voltage
exceeds the short winding protection voltage V
converter will stop switching. Once VCC drops below the
UVLO level, capacitor C
will be recharged and the
VCC
supply will restart again. This cycle will be repeated until
the short-circuit is removed (safe restart mode).
The short winding protection will also protect in case of a
secondary diode short-circuit.
OverTemperature Protection (OTP)
An accurate temperature protection is provided in the
circuit. When the junction temperature exceeds the
thermal shutdown temperature, the IC will stop switching.
When VCC drops to UVLO, capacitor C
recharged to the V
start
level.
Regarding the TEA1533T, this IC will not start switching
again. Subsequently, VCC will drop again to the UVLO
level, etc. Operation only recommences when the V
voltage drops below a level of approximately 4.5 V
(practically when the V
has been disconnected for a
mains
short period).
V
sense(max)
0.52 V
(typ)
0.3 V
(typ)
will be
VCC
swp
, the
CC
TEA1533T; TEA1533AT
Control pin protection
If pin CTRL is open-circuit or not connected, a fault
conditionis assumed and theconverter will stop switching.
Operation will recommence as soon as the fault condition
is removed.
Burst mode standby
Pin CTRL is also used to implement the burst mode
standby. In burst mode standby, the power supply enters
a special low dissipation state. Figure 11 shows a flyback
converter using the burst mode standby function. The
system enters burst mode standby when the
microcontroller activates NPN transistor T1 on the
secondary side.
When the voltage on C
measured by the microcontroller, the opto-coupler is
activated by T1, sending a large current signal to
pin CTRL.Inresponseto this signal, the IC stops switching
and enters a ‘hiccup’ mode. This burst activation signal
should be present for longer than the ‘burst blank’ period
(typically 30 µs): the blanking time prevents false burst
triggering due to spikes. Figure 12 shows the burst mode
standby signals. The hiccup mode during burst mode
standby operation does not differ from the hiccup mode at
safe restart during a system fault condition (e.g. output
short-circuit). The power is reduced during soft restart
mode.
Burst mode standby operation continues until the
microcontroller stops activating transistor T1. The system
then enters the start-up sequence and begins normal
switching behaviour.
V
I
burstmode
th
--------------- R
CTRL
+=
exceeds a certain voltage,
micro
I
th(on)
Regarding the TEA1533AT, when the V
start
level is
reached, switching starts again (safe restart mode). This
process is repeated as long as the OTP condition exists.
2002 Aug 2310
Page 11
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
Soft start-up
To prevent transformer rattle during hiccup, the
transformer peak current is slowly increased by the soft
start function. This can be achieved by inserting a resistor
and a capacitor between pin I
(see Fig.10). An internal current source charges the
capacitor to V = ISS× RSS, with a maximum of
approximately 0.5 V.
The start level and the time constant of the increasing
primary current level can be adjusted externally by
changing the values of RSS and CSS.
V
I
primary(max)
τR
SSCSS
ocpISSRSS
=
---------------------------------------------- -
×=
The charging currentI
pin I
pin I
is below approximately 0.5 V. If the voltage on
sense
exceeds 0.5 V, the soft start current source will
sense
×()–
R
sense
will flow aslong as the voltage on
SS
start limiting the current ISS. At the V
current source is completely switched off.
and the sense resistor
sense
level, the I
CC(start)
SS
TEA1533T; TEA1533AT
Driver
The driver circuit to the gate of the power MOSFET has a
current sourcing capabilityof 170 mA typical and a current
sink capability of 700 mA typical. This permits fast turn-on
and turn-off of the power MOSFET for efficient operation.
A low driver source current has been chosen to limit the
∆V/∆t at switch-on. This reduces Electro Magnetic
Interference (EMI) and also limits the current spikes
across R
sense
.
Since the soft start current ISS is subtracted from pin V
CC
chargingcurrent, the RSSvaluewill affect the VCCcharging
current level by a maximum of 60 µA (typical value).
handbook, halfpage
I
SS
0.5 V
start-up
V
ocp
9
I
sense
R
SS
C
SS
R
sense
MGU502
Fig.10 Soft start.
2002 Aug 2311
Page 12
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
Voltages
V
CC
V
CTRL
V
DEM
V
sense
V
DRAIN
supply voltagecontinuous−0.4+20V
voltage on pin CTRL−0.4+5V
voltage on pin DEMcurrent limited−0.4−V
voltage on pin I
sense
current limited−0.4−V
voltage on pin DRAIN−0.4+650V
Currents
I
CTRL
I
DEM
I
sense
I
DRIVER
I
DRAIN
current on pin CTRLd < 10%−50mA
current on pin DEM−250+250µA
current on pin I
sense
−1+10mA
current on pin DRIVERd < 10%−0.8+2A
current on pin DRAIN−5mA
General
P
tot
T
stg
T
j
V
esd
total power dissipationT
<70°C−0.75W
amb
storage temperature−55+150°C
operating junction temperature−20+145°C
electrostatic discharge voltage
pins 1 to 13HBM class 1; note 2−2000V
pin DRAINHBM class 1; note 2−1500V
any pinMM; note 3−400V
Notes
1. All voltages are measured with respect to ground; positive currents flow into the IC; pin VCC may not be current
driven. The voltage ratings are valid provided other ratings are not violated; current ratings are valid provided the
maximum power rating is not violated.
2. Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
3. Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 Ω resistor.
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th(j-a)
thermal resistance from junction to ambientin free air; note 1100K/W
Note
1. With pin GND connected to sufficient copper area on the printed-circuit board.
QUALITY SPECIFICATION
In accordance with ‘SNW-FQ-611-D’.
2002 Aug 2312
Page 13
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
CHARACTERISTICS
T
=25°C; VCC= 15 V; all voltages are measured with respect to ground; currents are positive when flowing into
amb
the IC; unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Start-up current source (pin DRAIN)
I
DRAIN
BV
DSS
M-levelmains-dependent operation
supply current drawn from
pin DRAIN
VCC=0V; V
> 100 V1.01.21.4mA
DRAIN
with auxiliary supply;
V
DRAIN
> 100 V
−100300µA
breakdown voltage650−−V
60−100V
enabling level
Supply voltage management (pin V
V
CC(start)
V
CC(UVLO)
V
CC(hys)
I
CC(h)
I
CC(l)
I
CC(restart)
I
CC(oper)
start-up voltage on V
under voltage lock-out on V
hysteresis voltage on V
pin VCC charging current, highV
pin VCC charging current, lowV
pin VCC restart currentV
supply current under normal
CC
CC
)
CC
CC
10.31111.7V
8.18.79.3V
V
CC(start)
DRAIN
DRAIN
3V<VCC<V
DRAIN
V
CC(UVLO)<VCC
− V
CC(UVLO)
2.02.32.6V
> 100 V; VCC<3V−1.2−1−0.8mA
> 100 V;
> 100 V;
CC(UVLO)
<V
CC(start)
−1.2−0.75−0.45mA
−650−550−450µA
no load on pin DRIVER1.11.31.5mA
operation
I
CC(burstmode)
supply current while not switching−0.85−mA
Demagnetization management (pin DEM)
V
th(DEM)
demagnetization comparator
50100150mV
threshold voltage on pin DEM
I
prot(DEM)
V
clamp(DEM)(neg)
protection current on pin DEMV
negative clamp voltage on
=50mV−50
DEM
I
= −150 µA−0.5−0.25−0.05V
DEM
(1)
−−10nA
pin DEM
V
clamp(DEM)(pos)
positive clamp voltage on
I
= 250 µA0.50.70.9V
DEM
pin DEM
t
suppr
suppression of transformer
1.11.51.9µs
ringing at start of secondary
stroke
Pulse width modulator
t
on(min)
t
on(max)
minimum on-time−t
leb
−ns
maximum on-timelatched405060µs
Oscillator
f
osc(l)
f
osc(h)
V
vco(start)
oscillator low fixed frequencyV
oscillator high fixed frequencyV
peak voltage on pin I
sense
, where
> 1.5 V202530kHz
CTRL
< 1 V145175205kHz
CTRL
see Figs 6 and 7−VCO
1
−mV
frequency reduction starts
2002 Aug 2313
Page 14
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
vco(max)
peak voltage on pin I
sense
the frequency is equal to f
, where
osc(l)
−VCO1− 25 −mV
Duty cycle control (pin CTRL)
V
CTRL(min)
minimum voltage on pin CTRL for
−1.0−V
maximum duty cycle
V
CTRL(max)
maximumvoltageonpin CTRL for
−1.5−V
minimum duty cycle
I
prot(CTRL)
protection current on pin CTRLV
= 1.5V−1
CTRL
(1)
−0.8-0.5µA
Burst mode standby (pin CTRL)
V
th(burst)(on)
burst mode standby active
I
= 6 mA3.33.84.3V
burst
threshold voltage
I
th(burst)(on)
I
th(burst)(off)
burst mode standby active current16−−mA
burst mode standby inactive
−−6mA
current
t
burst-blank
burst mode standby blanking time253035µs
Valley switch (pin DRAIN)
∆V/∆t
valley
t
valley-swon
valley recognition voltage change−85−+85V/µs
delay from valley recognition to
−150
(1)
−ns
switch-on
Overcurrent and short winding protection (pin I
V
sense(max)
t
PD
V
swp
t
leb
maximum source voltage OCP∆V/∆t = 0.1 V/µs0.480.520.56V
propagating delay from detecting
V
sense(max)
to switch-off
short winding protection voltage0.830.880.96V
blanking time for current and
)
sense
∆V/∆t = 0.5 V/µs−140185ns
300370440ns
short winding protection
I
SS
soft start currentV
< 0.5 V456075µA
sense
Overvoltage protection (pin DEM)
I
OVP(DEM)
OVP current on pin DEMset by resistor R
DEM
, see
546066µA
Section “OverVoltage
Protection (OVP)”
Overpower protection (pin DEM)
I
OPP(DEM)
I
OPP50%(DEM)
OPP current on pin DEM to start
OPP correction, set by the
demagnetization resistor R
DEM
OPP current on pin DEM, where
set by resistor R
DEM
Section “OverPower
Protection (OPP)”
, see
−−24−µA
−−100−µA
maximum source voltage is
limited to 0.3 V
2002 Aug 2314
Page 15
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Driver (pin DRIVER)
I
source
I
sink
V
o(max)
source current capability of driverVCC= 9.5 V; V
sink current capability of driverVCC= 9.5 V; V
V
= 9.5 V;
CC
maximum output voltage of the
V
VCC>12V−11.512V
DRIVER
= 9.5 V
DRIVER
=2V −−170−88mA
DRIVER
=2V −300−mA
400700−mA
driver
Overtemperature protection
T
prot(max)
maximum temperature protection
130140150°C
level
T
prot(hys)
hysteresis for the temperature
−8
(1)
−°C
protection level
Note
1. Guaranteed by design.
2002 Aug 2315
Page 16
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
APPLICATION INFORMATION
A converterwith the TEA1533consists of aninput filter, atransformer with athird winding (auxiliary), and an output stage
with a feedback circuit.
Capacitor C
(at pin VCC) buffers the supply voltage of the IC, which is powered via the high voltage rectified mains
VCC
during start-up and via the auxiliary winding during operation.
A sense resistor converts the primary current into a voltage at pin I
. The value of this sense resistor defines the
sense
maximum primary peak current.
handbook, full pagewidth
V
mains
C
C
R
VCC
CTRL
CTRL
V
CC
GND
CTRL
DEM
1
2
3
TEA1533T
4
TEA1533AT
5
6
7
R
DEM
D
N
D
s
micro
o
C
o
V
C
micro
µC
V
o
MICRO-
CONTROLLER
standby
pulse
V
i
C
i
N
14
13
12
11
10
9
8
DRAIN
HVS
HVS
DRIVER
I
sense
n.c.
n.c.
R
SS
C
SS
p
power
MOSFET
R
sense
N
aux
Fig.11 Flyback configuration with secondary sensing using the burst mode standby.
2002 Aug 2316
R
R
reg1
reg2
T
MGU503
1
Page 17
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
handbook, full pagewidth
V
i
V
D
(power
MOSFET)
V
i
V
o
TEA1533T; TEA1533AT
V
CC
V
gate
M-level
burst mode
V
µC
start-up
sequence
normal
operation
overvoltage
protection
(TEA1533AT)
output
short-circuit
burst mode standby
normal
operation
MGU504
Fig.12 Typical waveforms.
2002 Aug 2317
Page 18
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
PACKAGE OUTLINE
SO14: plastic small outline package; 14 leads; body width 3.9 mm
D
c
y
Z
14
8
TEA1533T; TEA1533AT
SOT108-1
E
H
E
A
X
v M
A
pin 1 index
1
e
02.55 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
1.75
0.069
A
1
0.25
0.10
0.010
0.004
A2A
1.45
1.25
0.057
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1)
cD
8.75
8.55
0.35
0.34
7
w M
b
p
scale
eHELLpQZywv θ
4.0
1.27
3.8
0.16
0.050
0.15
6.2
5.8
0.244
0.228
A
2
A
1.05
0.041
Q
1
detail X
1.0
0.7
0.4
0.6
0.028
0.039
0.024
0.016
(A )
L
p
L
0.25
0.010.004
A
3
θ
0.250.1
0.01
(1)
0.7
0.3
0.028
0.012
o
8
o
0
OUTLINE
VERSION
SOT108-1
IEC JEDEC EIAJ
076E06 MS-012
REFERENCES
2002 Aug 2318
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
Page 19
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
SOLDERING
Introduction to soldering surface mount packages
Thistext gives a very briefinsightto a complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certainsurfacemount ICs, but it isnotsuitablefor fine pitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board byscreen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
TEA1533T; TEA1533AT
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• Forpackageswith leads on four sides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement andbefore soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2002 Aug 2319
Page 20
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
Suitability of surface mount IC packages for wave and reflow soldering methods
1. Formore detailed information ontheBGA packages refertothe
“(LF)BGAApplication Note
”(AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP,TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Aug 2320
Page 21
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective dataDevelopmentThis data sheet contains data from the objective specification for product
Preliminary dataQualificationThis data sheet contains data from the preliminary specification.
Product dataProductionThis data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
STATUS
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
TEA1533T; TEA1533AT
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditionsabove those given inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Aug 2321
Page 22
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
NOTES
2002 Aug 2322
Page 23
Philips SemiconductorsProduct specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
NOTES
2002 Aug 2323
Page 24
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com.Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands613502/02/pp24 Date of release: 2002 Aug 23Document order number: 9397 750 10262
SCA74
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