Philips TDA7050-N3-S6, TDA7050-N3 Datasheet

DATA SH EET

Product specification
File under Integrated Circuits, IC01

June 1989

INTEGRATED CIRCUITS

TDA7050

Low voltage mono/stereo power
amplifier

June 1989 2

Philips Semiconductors Product specification

Low voltage mono/stereo power amplifier TDA7050

GENERAL DESCRIPTION

The TDA7050 is a low voltage audio amplifier for small radios with headphones (such as watch, pen and pocket radios)
in mono (bridge-tied load) or stereo applications.

Features

• Limited to battery supply application only (typ. 3 and 4 V)

• Operates with supply voltage down to 1,6 V

• No external components required

• Very low quiescent current

• Fixed integrated gain of 26 dB, floating differential input

• Flexibility in use − mono BTL as well as stereo

• Small dimension of encapsulation (see package design example)

QUICK REFERENCE DATA

PACKAGE OUTLINE

8-lead DIL; plastic (SOT97); SOT97-1; 1996 July 23.

Supply voltage range V

P

1,6 to 6,0 V

Total quiescent current (at V

P

= 3 V) I

tot

typ. 3,2 mA

Bridge tied load application (BTL)

Output power at RL = 32 Ω

V

P

= 3 V; d

tot

= 10% P

o

typ. 140 mW
D.C. output offset voltage between the outputs |∆V| max. 70 mV
Noise output voltage (r.m.s. value)

at f = 1 kHz; R

S

= 5 kΩ V

no(rms)

typ. 140 µV

Stereo application

Output power at R

L

= 32 Ω

d

tot

= 10%; VP = 3 V P

o

typ. 35 mW

d

tot

= 10%; VP = 4,5 V P

o

typ. 75 mW
Channel separation at R

S

= 0 Ω; f = 1 kHz α typ. 40 dB

Noise output voltage (r.m.s. value)

at f = 1 kHz; RS = 5 kΩ V

no(rms)

typ. 100 µV

June 1989 3

Philips Semiconductors Product specification

Low voltage mono/stereo power amplifier TDA7050

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Supply voltage V

P

max. 6 V

Peak output current I

OM

max. 150 mA
Total power dissipation see derating curve Fig.1
Storage temperature range T

stg

−55 to + 150 °C

Crystal temperature T

c

max. 100 °C
A.C. and d.c. short-circuit duration

at VP = 3,0 V (during mishandling) t

sc

max. 5 s

From junction to ambient R

thj-a

= 110 K/W

Fig.1 Power derating curve.