Philips TDA6107Q-N2, TDA6107Q-N1 Datasheet

DATA SH EET
Product specification Supersedes data of 1999 Jun 18 File under Integrated Circuits, IC02
1999 Oct 26
INTEGRATED CIRCUITS
TDA6107Q
1999 Oct 26 2
Philips Semiconductors Product specification
Triple video output amplifier TDA6107Q
FEATURES
Typical bandwidth of 5.5 MHz for an output signal of 60 V (p-p)
High slew rate of 900 V/µs
No external components required
Very simple application
Single supply voltage of 200 V
Internal reference voltage of 2.5 V
Fixed gain of 50
Black-Current Stabilization (BCS) circuit
Thermal protection.
GENERAL DESCRIPTION
The TDA6107Q includes three video output amplifiers in oneplasticDIL-bent-SIL9-pinmediumpower(DBS9MPF) package (SOT111-1), using high-voltage DMOS technology, and is intended to drive the three cathodes of a colour CRT directly. To obtain maximum performance, the amplifier should be used with black-current control.
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA6107Q DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1
handbook, full pagewidth
MGK278
TDA6107Q
V
DD
6
1, 2, 3
4
9, 8, 7
V
oc(3),
V
oc(2),
V
oc(1)
5
I
o(m)
R
f
MIRROR 5
DIFFERENTIAL
STAGE
VIP
REFERENCE
CURRENT
SOURCE
R
i
V
i(1)
,
V
i(2)
,
V
i(3)
R
a
3×
3×
CASCODE 1
CASCODE 2
MIRROR 2
1×
MIRROR 4
MIRROR 3
MIRROR 1
THERMAL
PROTECTION
CIRCUIT
1×
Fig.1 Block diagram (one amplifier shown).
1999 Oct 26 3
Philips Semiconductors Product specification
Triple video output amplifier TDA6107Q
PINNING
SYMBOL PIN DESCRIPTION
V
i(1)
1 inverting input 1
V
i(2)
2 inverting input 2
V
i(3)
3 inverting input 3 GND 4 ground (fin) I
om
5 black-current measurement output V
DD
6 supply voltage V
oc(3)
7 cathode output 3 V
oc(2)
8 cathode output 2 V
oc(1)
9 cathode output 1
handbook, halfpage
V
i(1)
V
i(2)
V
i(3)
GND
I
om
V
DD
V
oc(3)
V
oc(2)
V
oc(1)
1 2 3 4 5 6 7 8 9
TDA6107Q
MGK277
Fig.2 Pin configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground); currents as specified in Fig.1; unless otherwise specified.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices”
).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part D”
is applicable and can be found in the
“Quality reference Handbook”
.
The handbook can be ordered using the code 9397 750 00192.
SYMBOL PARAMETER MIN. MAX. UNIT
V
DD
supply voltage 0 250 V
V
i
input voltage at pins 1 to 3 0 12 V
V
o(m)
measurement output voltage 0 6 V
V
o(c)
cathode output voltage 0 V
DD
V
T
stg
storage temperature 55 +150 °C
T
j
junction temperature 20 +150 °C
V
es
electrostatic handling
Human Body Model (HBM) 2000 V Machine Model (MM) 300 V
1999 Oct 26 4
Philips Semiconductors Product specification
Triple video output amplifier TDA6107Q
THERMAL CHARACTERISTICS
Note
1. An external heatsink is necessary.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient 56 K/W
R
th(j-fin)
thermal resistance from junction to fin note 1 11 K/W
R
th(h-a)
thermal resistance from heatsink to ambient 18 K/W
Thermal protection
The internal thermal protection circuit gives a decrease of the slew rate at high temperatures: 10% decrease at 130 °C and 30% decrease at 145 °C (typical values on the spot of the thermal protection circuit).
handbook, halfpage
40
P
tot
(W)
0
8
6
2
0
4
40 80 160120
T
amb
(°C)
MBH989
(1)
(2)
Fig.3 Power derating curves.
(1) Infinite heatsink. (2) No heatsink.
handbook, halfpage
MGK279
5 K/W
outputs
fin
thermal protection circuit
6 K/W
Fig.4 Equivalent thermal resistance network.
1999 Oct 26 5
Philips Semiconductors Product specification
Triple video output amplifier TDA6107Q
CHARACTERISTICS
Operating range: Tj= 20 to +150 °C; VDD= 180 to 210 V. Test conditions: T
amb
=25°C; VDD= 200 V;
V
o(c1)=Vo(c2)=Vo(c3)
=1⁄2VDD; CL= 10 pF (CL consists of parasitic and cathode capacitance); R
th(h-a)
= 18 K/W
(measured in test circuit of Fig.8); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
q
quiescent supply current 5.9 6.9 7.9 mA
V
ref(int)
internal reference voltage (input stage)
2.5 V
R
i
input resistance 3.6 k G gain of amplifier 47.5 51.0 55.0 G gain difference 2.5 0 +2.5 V
O(c)
nominal output voltage at
pins 7, 8 and 9 (DC value)
Ii=0µA 116 129 142 V
V
O(c)(offset)
differential nominal output
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)
Ii=0µA 05V
V
o(c)(T)
output voltage temperature
drift at pins 7, 8 and 9
−−10 mV/K
V
o(c)(T)(offset)
differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
0 mV/K
I
o(m)(offset)
offsetcurrentofmeasurement
output
I
o(c)
=0µA;
1.5V<Vi< 5.5 V; 3V<V
o(m)
<6V
50 +50 µA
I
o(m)
/I
o(c)
linearity of current transfer 100 µA<I
o(c)
< 100 µA;
1.5V<Vi< 5.5 V; 3V<V
o(m)
<6V
0.9 1.0 1.1
at CRT discharge; I
o(c)
= 1 mA;
1.5V<Vi< 5.5 V; 3V<V
o(m)
< 5.4 V
1.0
I
o(c)(max)
maximum peak output current
(pins 7, 8 and 9)
50V<V
o(c)<VDD
50 V 20 mA
V
o(c)(min)
minimum output voltage
(pins 7, 8 and 9)
Vi= 7.0 V; note 1 −−10 V
V
o(c)(max)
maximum output voltage
(pins 7, 8 and 9)
Vi= 1.0 V; note 1 VDD− 15 −−V
B
S
small signal bandwidth
(pins 7, 8 and 9)
V
o(c)
= 60 V (p-p) 5.5 MHz
B
L
large signal bandwidth
(pins 7, 8 and 9)
V
o(c)
= 100 V (p-p) 4.5 MHz
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