Philips TDA6107Q Datasheet

INTEGRATED CIRCUITS

DATA SH EET

TDA6107Q

Triple video output amplifier

Product specification
Supersedes data of 1999 Jun 18
File under Integrated Circuits, IC02

1999 Oct 26

Philips Semiconductors Product specification

Triple video output amplifier TDA6107Q

FEATURES

• Typical bandwidth of 5.5 MHz for an output signal of

• Black-Current Stabilization (BCS) circuit

• Thermal protection.

60 V (p-p)

• High slew rate of 900 V/µs

• No external components required

• Very simple application

• Single supply voltage of 200 V

• Internal reference voltage of 2.5 V

• Fixed gain of 50

GENERAL DESCRIPTION

The TDA6107Q includes three video output amplifiers in
oneplasticDIL-bent-SIL9-pinmediumpower(DBS9MPF)
package (SOT111-1), using high-voltage DMOS
technology, and is intended to drive the three cathodes of
a colour CRT directly. To obtain maximum performance,
the amplifier should be used with black-current control.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA6107Q DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

BLOCK DIAGRAM

handbook, full pagewidth

V

DD

6

f

3×

MIRROR 5

CASCODE 1

CASCODE 2

V

1×

9, 8, 7

4

MGK278

oc(3),

V

oc(2),

V

oc(1)

5

I

o(m)

MIRROR 1

TDA6107Q

MIRROR 4

CURRENT

SOURCE

1×

THERMAL

PROTECTION

CIRCUIT

V

,

i(1)

1, 2, 3

V

,

i(2)

V

i(3)

R

i
R

a

VIP

REFERENCE

MIRROR 3

DIFFERENTIAL

STAGE

R

3×

MIRROR 2

Fig.1 Block diagram (one amplifier shown).

1999 Oct 26 2

Philips Semiconductors Product specification

Triple video output amplifier TDA6107Q

PINNING

SYMBOL PIN DESCRIPTION

V

i(1)

V

i(2)

V

i(3)

GND 4 ground (fin)
I

om

V

DD

V

oc(3)

V

oc(2)

V

oc(1)

1 inverting input 1
2 inverting input 2
3 inverting input 3

5 black-current measurement output
6 supply voltage
7 cathode output 3
8 cathode output 2
9 cathode output 1

handbook, halfpage

V
V
V

V

i(1)

V

i(2)

V

i(3)

GND

I

om

V

DD
oc(3)
oc(2)
oc(1)

1
2
3
4
5

TDA6107Q

6
7
8
9

MGK277

Fig.2 Pin configuration.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground);
currents as specified in Fig.1; unless otherwise specified.

SYMBOL PARAMETER MIN. MAX. UNIT

V
V
V
V
T
T
V

DD
i
o(m)
o(c)
stg
j
es

supply voltage 0 250 V
input voltage at pins 1 to 3 0 12 V
measurement output voltage 0 6 V
cathode output voltage 0 V

DD

V
storage temperature −55 +150 °C
junction temperature −20 +150 °C
electrostatic handling

Human Body Model (HBM) − 2000 V
Machine Model (MM) − 300 V

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see

“Handling MOS Devices”

).

QUALITY SPECIFICATION

Quality specification

“SNW-FQ-611 part D”

is applicable and can be found in the

The handbook can be ordered using the code 9397 750 00192.

1999 Oct 26 3

“Quality reference Handbook”

.

Philips Semiconductors Product specification

Triple video output amplifier TDA6107Q

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-fin)

R

th(h-a)

Note

1. An external heatsink is necessary.

thermal resistance from junction to ambient 56 K/W
thermal resistance from junction to fin note 1 11 K/W
thermal resistance from heatsink to ambient 18 K/W

Thermal protection

handbook, halfpage

8

P

tot

(W)

6

4

2

0

−40

(1) Infinite heatsink.
(2) No heatsink.

(1)

(2)

0

40 80 160120

T

Fig.3 Power derating curves.

MBH989

amb

(°C)

The internal thermal protection circuit gives a decrease of
the slew rate at high temperatures: 10% decrease at
130 °C and 30% decrease at 145 °C (typical values on the
spot of the thermal protection circuit).

handbook, halfpage

outputs

5 K/W

thermal protection circuit

6 K/W

fin

MGK279

Fig.4 Equivalent thermal resistance network.

1999 Oct 26 4

Philips Semiconductors Product specification

Triple video output amplifier TDA6107Q

CHARACTERISTICS

Operating range: Tj= −20 to +150 °C; VDD= 180 to 210 V. Test conditions: T
V

o(c1)=Vo(c2)=Vo(c3)

=1⁄2VDD; CL= 10 pF (CL consists of parasitic and cathode capacitance); R

(measured in test circuit of Fig.8); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

q

V

ref(int)

quiescent supply current 5.9 6.9 7.9 mA
internal reference voltage

(input stage)

R

i

input resistance − 3.6 − kΩ
G gain of amplifier 47.5 51.0 55.0
∆G gain difference −2.5 0 +2.5
V

O(c)

nominal output voltage at

Ii=0µA 116 129 142 V

pins 7, 8 and 9 (DC value)
∆V

O(c)(offset)

differential nominal output

Ii=0µA − 05V
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)

∆V

o(c)(T)

output voltage temperature
drift at pins 7, 8 and 9

∆V

o(c)(T)(offset)

differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9

I

o(m)(offset)

∆I

/∆I

o(m)

offsetcurrentofmeasurement
output

linearity of current transfer −100 µA<I

o(c)

I

=0µA;

o(c)

1.5V<Vi< 5.5 V;

3V<V

o(m)

<6V

< 100 µA;

o(c)

1.5V<Vi< 5.5 V;

3V<V

o(m)

<6V

at CRT discharge;

= 1 mA;

I

o(c)

1.5V<Vi< 5.5 V;

I

o(c)(max)

maximum peak output current

3V<V

50V<V

< 5.4 V

o(m)

o(c)<VDD

− 50 V − 20 − mA

(pins 7, 8 and 9)

V

o(c)(min)

minimum output voltage

Vi= 7.0 V; note 1 −−10 V
(pins 7, 8 and 9)

V

o(c)(max)

maximum output voltage

Vi= 1.0 V; note 1 VDD− 15 −−V
(pins 7, 8 and 9)

B

S

small signal bandwidth

V

= 60 V (p-p) − 5.5 − MHz

o(c)

(pins 7, 8 and 9)

B

L

large signal bandwidth

V

= 100 V (p-p) − 4.5 − MHz

o(c)

(pins 7, 8 and 9)

=25°C; VDD= 200 V;

amb

= 18 K/W

th(h-a)

− 2.5 − V

−−10 − mV/K

− 0 − mV/K

−50 − +50 µA

0.9 1.0 1.1

− 1.0 −

1999 Oct 26 5