Philips TDA5630T-C2, TDA5630M-C2, TDA5630M-C1, TDA5630AT-C1, TDA5630AM-C1 Datasheet

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DATA SH EET
Product specification File under Integrated Circuits, IC02
1996 Mar 21
INTEGRATED CIRCUITS
TDA5630; TDA5631
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
1996 Mar 21 2
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
FEATURES
Balanced mixer with a common emitter input for band A (single input)
2-pin oscillator for bands A and B
Balanced mixer with a common base input for
bands B and C (balanced input)
3-pin oscillator for band C
Local oscillator buffer output for external synthesizer
SAW filter preamplifier with a low output impedance to
drive the SAW filter directly
Band gap voltage stabilizer for oscillator stability
Electronic band switch.
APPLICATIONS
3-band all channel TV and VCR tuners
Any standard.
GENERAL DESCRIPTION
The TDA5630 and TDA5631 are monolithic integrated circuits that perform the mixer/oscillator functions for bands A, B and C in TV and VCR tuners. These low-power mixer/oscillators require a power supply of 9 V and are available in a very small package.
The devices give the designer the capability to design an economical and physically small 3-band tuner.
They are suitable for European standards, as illustrated in Fig.12, with the following RF bands: 48.25 to 168.25 MHz,
175.25 to 447.25 MHz and 455.25 to 855.25 MHz. With an appropriate tuned circuit, they are also suitable for NTSC all channel tuners (USA and Japan).
The tuner development time can be drastically reduced by using these devices.
QUICK REFERENCE DATA
Note
1. The limits are related to the tank circuits used in Fig.12 and the intermediate frequency. Frequency bands may be
adjusted by the choice of external components.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
supply voltage 9.0 V
I
P
supply current 35 mA
f
RF
frequency range RF input; band A; note 1 45 180 MHz
RF input; band B; note 1 160 470 MHz RF input; band C; note 1 430 860 MHz
G
v
voltage gain band A 25 dB
band B 36 dB band C 36 dB
NF noise figure band A 7.5 dB
band B 8 dB band C 9 dB
V
o
output voltage to get 1% cross modulation in channel
band A 118 dBµV band B 118 dBµV band C 118 dBµV
1996 Mar 21 3
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA5630T SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
TDA5630M SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
TDA5631T SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
TDA5631M SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
Fig.1 Block diagram.
handbook, full pagewidth
band A oscillator
tuned circuit
band B oscillator
tuned circuit
band C oscillator
tuned circuit
20 (1)
18 (3)
16 (5)
14 (7)
(11) 10
12 (9)
11 (10)
(12) 9
(13) 8
(18) 3
(15) 6
(16) 5
(17) 4
(19) 2
(20) 1
(14) 7
local oscillator
amplifier outputs
RF GND band A
input
band B
inputs
band C
inputs
band switch
input
V
P
MBH044
BAND A
OSCILLATOR
BAND B
OSCILLATOR
BAND C
OSCILLATOR
ELECTRONIC
BAND
SWITCH
MIXER
LOCAL
OSCILLATOR
AMPLIFIER
IF AMPLIFIER
BAND A
STAGE
BAND B
STAGE
BAND C
STAGE
DC
STABILIZER
MIXER MIXER
19 (2)
17 (4)
15 (6)
IF outputs
TDA5630 TDA5631
13 (8)
GND
The numbers given in parenthesis represent the TDA5631.
1996 Mar 21 4
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
PINNING
SYMBOL
PIN
DESCRIPTION
TDA5630 TDA5631
CIN1 1 20 band C input 1 CIN2 2 19 band C input 2 RFGND 3 18 ground for RF inputs BIN1 4 17 band B input 1 BIN2 5 16 band B input 2 AIN 6 15 band A input V
P
7 14 supply voltage LOOUT1 8 13 local oscillator amplifier output 1 LOOUT2 9 12 local oscillator amplifier output 2 BS 10 11 band switch input IFOUT1 11 10 IF amplifier output 1 IFOUT2 12 9 IF amplifier output 2 GND 13 8 ground (0 V) BOSCOC 14 7 band B oscillator output collector COSCOC1 15 6 band C oscillator output collector 1 BOSCIB 16 5 band B oscillator input base COSCOC2 17 4 band C oscillator output collector 2 AOSCOC 18 3 band A oscillator output collector COSCIB 19 2 band C oscillator input base AOSCIB 20 1 band A oscillator input base
Fig.2 Pin configuration (TDA5630).
handbook, halfpage
TDA5630
MGD265
1 2 3 4 5 6 7 8 9
10
CIN1 CIN2
RFGND
BIN1 BIN2
AIN
V
P
LOOUT1 LOOUT2
BS
AOSCIB COSCIB AOSCOC COSCOC2 BOSCIB COSCOC1 BOSCOC GND IFOUT2 IFOUT1
20 19 18 17 16 15 14 13 12 11
Fig.3 Pin configuration (TDA5631).
handbook, halfpage
TDA5631
MGD266
1 2 3 4 5 6 7 8 9
10
CIN1 CIN2 RFGND BIN1 BIN2 AIN V
P
LOOUT1 LOOUT2 BS
AOSCIB COSCIB
AOSCOC
COSCOC2
BOSCIB
COSCOC1
BOSCOC
GND IFOUT2 IFOUT1
20 19 18 17 16 15 14 13 12 11
1996 Mar 21 5
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
Human body model: the IC withstands 2000 V in accordance with the MIL-STD-883C category B (stress reference pins 3, 7 and 13 shorted together for the TDA5630; pins 18, 14 and 8 for the TDA5631).
Machine model: the IC withstands 200 V in accordance with the MIL-STD-883C (stress reference pins 3, 7 and 13 shorted together for the TDA5630; pins 18, 14 and 8 for the TDA5631).
SYMBOL PARAMETER MIN. MAX. UNIT
V
P
supply voltage 0.3 +10.5 V
V
SW
switching voltage 0 10.5 V
I
O
output current of each pin referenced to ground −−10 mA
t
sc
maximum short-circuit time (all pins) 10 s
T
stg
IC storage temperature 55 +150 °C
T
amb
operating ambient temperature 10 +80 °C
T
j
junction temperature +150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
SOT163-1 100 K/W SOT266-1 120 K/W
1996 Mar 21 6
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
CHARACTERISTICS
V
P
=9V; T
amb
=25°C; measured in circuit of Fig.12; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
supply voltage 8.1 9.0 9.9 V
I
P
supply current 35 45 mA
V
SW
switching voltage band A 0 1.1 V
band B 1.6 2.4 V band C 3.0 5.0 V
I
SW
switching current band A −−2µA
band B −−5µA band C −−10 µA
Band A mixer including IF amplifier
f
RF
frequency range note 1 45 180 MHz
G
v
voltage gain fRF= 50 MHz; see Fig.4; note 2 22.5 25 27.5 dB
f
RF
= 180 MHz; see Fig.4; note 2 22.5 25 27.5 dB
NF noise figure f
RF
= 50 MHz; see Figs 5 and 6 7.5 9 dB
f
RF
= 180 MHz; see Figs 5 and 6 910dB
V
o
output voltage causing 1% cross modulation in channel
fRF= 180 MHz; see Fig.7 115 118 dBµV
V
i
input voltage causing 10 kHz pulling in channel
fRF= 180 MHz; note 3 100 dBµV
g
os
optimum source conductance for noise figure
fRF=50MHz 0.5 mS f
RF
= 180 MHz 1.1 mS
g
i
input conductance fRF= 50 MHz; see Fig.13; note 4 0.26 mS
f
RF
= 180 MHz; see Fig.13; note 4 0.35 mS
C
i
input capacitance fRF= 50 to 180 MHz; see Fig.13; note 4 2 pF
Band A oscillator
f
osc
frequency range note 5 80 216 MHz
f
shift
frequency shift VP= 10%; note 6 −−200 kHz
f
drift
frequency drift T=25°C with no compensation;
NP0 capacitors; note 7
−−500 kHz
5 s to 15 min after switch on; with no compensation; NP0 capacitors; note 8
−−200 kHz
1996 Mar 21 7
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
Band B mixer including IF amplifier; measurements using hybrid; note 9 f
RF
frequency range note 1 160 470 MHz
G
v
voltage gain fRF= 170 MHz; see Fig.8; note 2 33 36 39 dB
f
RF
= 470 MHz; see Fig.8; note 2 33 36 39 dB
NF noise figure (not corrected
for image)
f
RF
= 170 MHz; see Fig.9 810dB
f
RF
= 470 MHz; see Fig.9 810dB
V
o
output voltage causing 1% cross modulation in channel
fRF= 170 MHz; see Fig.10 115 118 dBµV f
RF
= 470 MHz; see Fig.10 115 118 dBµV
V
i
input voltage causing 10 kHz pulling in channel
fRF= 470 MHz; TDA5630T and TDA5631T; note 3
91 dBµV
f
RF
= 470 MHz; TDA5630M and
TDA5631M; note 3
83 dBµV
input voltage causing N+51 MHz pulling
f
RF
= 430 MHz; TDA5630T and
TDA5631T; see Fig.11
81 dBµV
f
RF
= 430 MHz; TDA5630M and
TDA5631M; see Fig.11
66 dBµV
Z
i
input impedance (RS+jLSω)RS; see Fig.14; note 4 30 −Ω
L
S
; see Fig.14; note 4 8 nH
Band B oscillator
f
OSC
frequency range note 5 200 500 MHz
f
shift
frequency shift VP= 10%; note 6 −−400 kHz
f
drift
frequency drift T=25°C with no compensation:
NP0 capacitors; note 7
−−2 MHz
5 s to 15 min after switch on; with no compensation: NP0 capacitors; note 8
−−300 kHz
Band C mixer including IF amplifier; measurements using hybrid; note 9 f
RF
frequency range note 1 430 860 MHz
G
v
voltage gain fRF= 430 MHz; see Fig.8; note 2 33 36 39 dB
f
RF
= 860 MHz; see Fig.8; note 2 33 36 39 dB
NF noise figure (not corrected
for image)
f
RF
= 430 MHz; see Fig.9 911dB
f
RF
= 860 MHz; see Fig.9 911dB
V
o
output voltage causing 1% cross modulation in channel
fRF= 430 MHz; see Fig.10 115 118 dBµV f
RF
= 860 MHz; see Fig.10 115 118 dBµV
V
i
input voltage causing 10 kHz pulling in channel
fRF= 860 MHz; TDA5630T and TDA5631T; note 3
87 dBµV
f
RF
= 860 MHz; TDA5630M and
TDA5631M; note 3
93 dBµV
input voltage causing N+51 MHz pulling
f
RF
= 820 MHz; see Fig.11 61 dBµV
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1996 Mar 21 8
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
Z
i
input impedance (RS+jLSω)RS at fRF= 430 MHz; see Fig.15; note 4 40 −Ω
R
S
at fRF= 860 MHz; see Fig.15; note 4 53 −Ω
L
S
at fRF= 430 to 860 MHz; see Fig.15;
note 4
9 nH
Band C oscillator
f
OSC
frequency range note 5 470 900 MHz
f
shift
frequency shift VP= 10%; note 6 −−400 kHz
f
drift
frequency drift T=25°C with no compensation;
NP0 capacitors; note 7
−−2.5 MHz
5 s to 15 min after switch on; with no compensation; NP0 capacitors; note 8
−−600 kHz
IF amplifier
S
22
output reflection coefficient magnitude; see Fig.16; note 4 −−10 dB
phase; see Fig.16; note 4 9
o
Z
o
output impedance (RS+jLSω)
RS; see Fig.16; note 4 95 −Ω L
S
; see Fig.16; note 4 45 nH
LO output; R
L
= 100
Y
o
output admittance (GP+jCPω)
f
osc
= 80 MHz; see Fig.17; note 4 2.5 mS
0.9 pF
f
osc
= 900 MHz; see Fig.17; note 4 3.5 mS
0.7 pF
V
o
output voltage RL= 100 83 91 100 dBµV
SRF spurious signal on LO output
with respect to LO output signal
note 10 −−−10 dBc
SHD LO signal harmonics with
respect to LO signal
−−−10 dBc
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1996 Mar 21 9
Philips Semiconductors Product specification
9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners
TDA5630;
TDA5631
Notes to the characteristics
1. The RF frequency range is defined by the oscillator frequency range and the intermediate frequency.
2. The gain is defined as the transducer gain (measured in Fig.12) plus the voltage transformation ratio of L6 to L7 (10 : 2, 15.4 dB including transformer loss).
3. The input level causing 10 kHz frequency detuning at the LO output. f
osc=fRF
+ 33.4 MHz.
4. All S-parameters are referred to a 50 system.
5. Limits are related to the tank circuits used in Fig.12. Frequency bands may be adjusted by the choice of external components.
6. The frequency shift is defined for a variation of power supply, first from VP= 9 to 8.1 V, then from VP= 9 to 9.9 V. In both cases, the frequency shift is below the specified value.
7. The frequency drift is defined for a variation of ambient temperature, first from T
amb
=25°C to T
amb
=0°C, then
from T
amb
=25°C to T
amb
=50°C. In both cases, the frequency drift is below the specified value with NP0 capacitors. Capacitor types C1 to C11, as specified in Fig.12 for non-PLL applications, must be changed to series with other temperature coefficients (e.g. N330, N750 etc.).
8. Switch on drift is the change of oscillator frequency between 5s and 15 min after switch on.
9. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the hybrid is 100 .
10. Measured with RF input voltage: a) RF voltage = 120 dBµV at fRF< 180 MHz. b) RF voltage = 107.5 dBµV at 180 MHz < fRF< 225 MHz. c) RF voltage = 97 dBµV at 225 MHz < fRF< 860 MHz.
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