Philips TDA5155X Datasheet

INTEGRATED CIRCUITS

DATA SH EET

TDA5155

Pre-amplifier for Hard Disk Drive (HDD) with MR-read/inductive write heads

Preliminary speciﬁcation File under Integrated Circuits, IC11

1997 Apr 08

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 QUICK REFERENCE DATA 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION

8.1 Read mode

8.2 Write mode

8.3 Sleep mode

8.4 Standby mode

8.5 Active mode

8.6 Bi-directional serial interface

8.6.1 Addressing

8.6.2 Programming data

8.6.3 Reading data

8.7 Operation of the serial interface

8.7.1 Configuration

8.7.2 Power control

8.7.3 Head select

8.7.4 Servo write

8.7.5 Test

8.7.6 Write amplifier programmable capacitors

8.7.7 High frequency gain attenuator register

8.7.8 High frequency gain boost register

8.7.9 Settle pulse

8.7.10 Address registers summary

8.8 Head unsafe

8.9 HUS survey 9 LIMITING VALUES 10 HANDLING 11 THERMAL RESISTANCE 12 RECOMMENDED OPERATION

CONDITIONS 13 CHARACTERISTICS 14 DEFINITIONS 15 LIFE SUPPORT APPLICATIONS

TDA5155

1997 Apr 08 2

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

1 FEATURES

• Designed for 10 dual-stripe MR-read/inductive write

heads

• Current bias-current sense architecture

• Single supply voltage (5.0 V ±10%); a separate write

drivers supply pin can be biased from VCC to 8 V +10%

• MR elements connected to ground (GND)

• Equal bias currents in the two MR stripes of each head

• On-chip AC couplings eliminate MR head DC offset

• 3-wire serial interface for programming

• Programmable voltage/current mode write data input

• Programmable high frequency zero-pole gain boost

• Programmable write driver compensation capacitance

• Programmable MR bias currents and write currents

• 1-bit programmable read gain

• Sleep, standby, active and test modes available

• Measurement of head resistances in test mode

• In test mode, one MR bias current may be forced to a

minimum current

• Short write current rise and fall times with near

rail-to-rail voltage swing

• Head unsafe pin for signalling of abnormal conditions

and behaviour

• Low supply voltage write current inhibit (active or

inactive)

• Support servo writing

• Provide temperature monitor

• Thermal asperity detection with programmable

threshold level

• Requires only one external resistor.

2 APPLICATIONS

• Hard Disk Drive (HDD).

TDA5155

3 GENERAL DESCRIPTION

The 5.0 V pre-amplifier for HDD applications has been designed for five terminal, dual-stripe Magneto-Resistive (MR)-read/inductive write heads. The disks of the disk drive are connected to ground. To avoid voltage breakthrough between the heads and the disk, the MR elements of the heads are also connected to ground. The symmetry of the dual-stripe head-amplifier combination automatically distinguishes between the differential signals such as signals and the common-mode effects like interference. The latter are rejected by the amplifier.

The device incorporates read amplifiers, write amplifiers, a serial interface, digital-to-analog converters, reference and control circuits which all operate on a single supply voltage of 5 V ±10%. The output drivers have a separate supply voltage pin which can be connected to a higher supply voltage of up to 8 V +10%. The complementary output stages of the write amplifier allow writing with near rail-to-rail peak voltages across the inductive write head.

The read amplifier has low input impedance. The DC offset between the two stripes of the MR head is eliminated using on-chip AC coupling. Fast settling features are used to keep the transients short. As an option, the read amplifier may be left biased during writing so as to reduce the duration of these transients even further. Series inductance in the leads between the amplifier and MR heads influences the bandwidth which can be compensated by using a programmable high frequency gain boost (HF zero). HF noise and bandwidth can be attenuated using a programmable high frequency gain attenuator (HF pole).

On-chip digital-to-analog converters for MR bias currents and write currents are programmed via a 3-wire serial interface. Head selection, mode control, testing and servo writing can also be programmed using the serial interface. In sleep mode the CMOS serial interface is operational. Fig.1 shows the block diagram of the device.

4 ORDERING INFORMATION

TYPE

NUMBER

TDA5155X − naked die −

1997 Apr 08 3

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD)

TDA5155

with MR-read/inductive write heads

5 QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CC(WD)

v(dif)

−3dB

F noise ﬁgure R

irn

CMRR common mode rejection ratio

PSRR power supply rejection ratio

, t

MR(PR)

WR(b-p)

SCLK

supply voltage 4.5 5.0 5.5 V supply voltage for write drivers V

8.0 8.8 V

differential voltage gain from head inputs to RDx, RDy;

RMR=28Ω; IMR=10mA

data bit d4 = 0 − 160 − data bit d4 = 1 − 226 −

−3 dB frequency bandwidth upper bandwidth without gain

− 220 − MHz

boost (4 nH lead inductance)

=28Ω; IMR=10mA;

=25°C; f = 20 MHz

amb

input referred noise voltage RMR=28Ω; IMR=10mA;

=25°C; f = 20 MHz

amb

− 3.0 3.2 dB

− 0.9 1.0 nV/√Hz

IMR=10mA

mismatch <5%

f < 1 MHz − 45 − dB f < 100 MHz − 25 − dB

IMR=10mA

(input referred) R

mismatch <5%

f < 1 MHz − 80 − dB f < 100 MHz − 50 − dB

write current rise/fall time (10% to 90%)

programming MR bias current

Lh= 150 nH; Rh=10Ω; IWR= 35 mA; f = 20 MHz

V V

ext

= 8.0 V −−1.8 ns

CC(WD)

= 6.5 V −−2.1 ns

CC(WD)

=10kΩ 5 − 20.5 mA

range programming write current range

=10kΩ 20 − 51 mA

ext

(base-to-peak) serial interface clock rate −−25 MHz

1997 Apr 08 4

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

6 BLOCK DIAGRAM

handbook, full pagewidth

WDlx(i)

WDly(i) WDlx(v) WDly(v)

HUS

ext

6 7 4 5

WRITE DRIVER

INPUT

HEAD UNSAFE

INDICATOR

LOW SUPPLY

VOLTAGE

INDICATOR

TDA5155

WRITE

CURRENT

SOURCE

VOLTAGE

REFERENCE

TDA5155

CC(WD)

(5 to 8 V)

20, 25, 30, 35, 40, 45, 50, 55,

WRITE DRIVER

AND

READ PREAMP

(10×)

60, 65

19, 24,

29, 34, 39, 44,

49, 54, 59, 64

nWy



nWx

R/W

SCLK

SEN

SDATA

RDx RDy

11 9

13 14

SERIAL

INTERFACE

20 kΩ

4 4

GNDn

TAS

DETECTOR

head select

CURRENT

SOURCE

2, 12, 15, 18

5 3

MR

23, 28, 33, 38, 43, 48, 53, 58,

63, 68 

22, 27, 32, 37, 42, 47, 52, 57,

62, 67 

21, 26, 31, 36, 41, 46, 51, 56,

61, 66 

MGG982

nRy



nGND



nRx



Fig.1 Block diagram.

1997 Apr 08 5

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

7 PINNING

SYMBOL PAD DESCRIPTION

CC(WD)

GND1 2 ground connection 1 HUS 3 head unsafe output WDIx(v) 4 write data input (differential, voltage

WDIy(v) 5 write data input (differential, voltage

WDIx(i) 6 write data input (differential, current

WDIy(i) 7 write data input (differential, current

W 8 read/write (read = active HIGH,

SEN 9 serial bus enable SDATA 10 serial bus data SCLK 11 serial bus clock GND2 12 ground connection 2 RDx 13 read data output (differential x − y) RDy 14 read data output (differential x − y) GND3 15 ground connection 3 V

ext

GND4 18 ground connection 4 0Wx 19 inductive write head connection for

0Wy 20 inductive write head connection for

0Rx 21 MR-read head connection for head

0GND 22 ground connection for head H0 0Ry 23 MR-read head connection for head

1Wx 24 inductive write head connection for

1Wy 25 inductive write head connection for

1Rx 26 MR-read head connection for head

1GND 27 ground connection for head H1 1Ry 28 MR-read head connection for head

2Wx 29 inductive write head connection for

1 supply voltage for the write drivers

input)

write = active LOW)

16 supply voltage 17 10 kΩ external resistor

head H0 (differential x − y)

H0 (differential x − y)

head H1 (differential x − y)

H1 (differential x − y)

head H2 (differential x − y)

TDA5155

SYMBOL PAD DESCRIPTION

2Wy 30 inductive write head connection for

head H2 (differential x − y)

2Rx 31 MR-read head connection for head

H2 (differential x − y) 2GND 32 ground connection for head H2 2Ry 33 MR-read head connection for head

H2 (differential x − y) 3Wx 34 inductive write head connection for

head H3 (differential x − y) 3Wy 35 inductive write head connection for

head H3 (differential x − y) 3Rx 36 MR-read head connection for head

H3 (differential x − y) 3GND 37 ground connection for head H3 3Ry 38 MR-read head connection for head

H3 (differential x − y) 4Wx 39 inductive write head connection for

head H4 (differential x − y) 4Wy 40 inductive write head connection for

head H4 (differential x − y) 4Rx 41 MR-read head connection for head

H4 (differential x − y) 4GND 42 ground connection for head H4 4Ry 43 MR-read head connection for head

H4 (differential x − y) 5Wx 44 inductive write head connection for

head H5 (differential x − y) 5Wy 45 inductive write head connection for

head H5 (differential x − y) 5Rx 46 MR-read head connection for head

H5 (differential x − y) 5GND 47 ground connection for head H5 5Ry 48 MR-read head connection for head

H5 (differential x − y) 6Wx 49 inductive write head connection for

head H6 (differential x − y) 6Wy 50 inductive write head connection for

head H6 (differential x − y) 6Rx 51 MR-read head connection for head

H6 (differential x − y) 6GND 52 ground connection for head H6 6Ry 53 MR-read head connection for head

H6 (differential x − y) 7Wx 54 inductive write head connection for

head H7 (differential x − y)

1997 Apr 08 6

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

SYMBOL PAD DESCRIPTION

7Wy 55 inductive write head connection for

head H7 (differential x − y)

7Rx 56 MR-read head connection for head

H7 (differential x − y) 7GND 57 ground connection for head H7 7Ry 58 MR-read head connection for head

H7 (differential x − y) 8Wx 59 inductive write head connection for

head H8 (differential x − y) 8Wy 60 inductive write head connection for

head H8 (differential x − y) 8Rx 61 MR-read head connection for head

H8 (differential x − y)

handbook, full pagewidth

9Wx

9GND

9Rx

9Wy

8Ry

9Ry

TDA5155

SYMBOL PAD DESCRIPTION

8GND 62 ground connection for head H8 8Ry 63 MR-read head connection for head

H8 (differential x − y)

9Wx 64 inductive write head connection for

head H9 (differential x − y)

9Wy 65 inductive write head connection for

head H9 (differential x − y)

9Rx 66 MR-read head connection for head

H9 (differential x − y) 9GND 67 ground connection for head H9 9Ry 68 MR-read head connection for head

H9 (differential x − y)

7Wx

7Wy

7Rx

7GND

7Ry

8Wx

8Wy

8Rx

8GND

CC(WD)

GND1

WDIx(v) WDIy(v)

WDIx(i) WDIy(i)

SDATA

SCLK

GND2

GND3

GND4

HUS

R/W

SEN

RDx RDy

ext

6465666768 54555657585960616263

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

TDA5155

6Ry

53 52

6GND

6Rx

6Wy

6Wx

5Ry

5GND

5Rx

5Wy

5Wx

4Ry

4GND

4Rx

4Wy

4Wx

3Ry

3GND

3Rx

3Wy

3Wx

0Wx

0Wy

0Rx

0GND

0Ry

1Wx

1Wy

Fig.2 Pad arrangement.

1997 Apr 08 7

1Rx

1GND

1Ry

2Wx

2Wy

2Rx

2GND

2Ry

MGG981

Philips Semiconductors Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD) with MR-read/inductive write heads

8 FUNCTIONAL DESCRIPTION

8.1 Read mode

The read mode disables the write circuitry to save power while reading. The read circuitry is disactivated for write, sleep and standby modes. The read circuitry may also be biased during write mode to shorten transients. The selected head is connected to a multiplexed low-noise read amplifier. The read amplifier has low-impedance inputs nRx and nRy (n is the number of the head) and low-impedance outputs RDx and RDy. The signal polarity is non-inverting from x and y inputs to x and y outputs.

Ambient magnetic fields at the MR elements result in a relative change in MR resistance:

-------------R

This change produces a current variation:

MRIMR

where I

The current variation is amplified to form the read data output signal voltage, which is available at RDx and RDy. AC coupling between MR elements and amplifier stages prevents the amplifier input stages from overloading by DC voltages across the MR elements. A fast settling procedure shortens DC settling transients.

×=

-------------R

is the bias current in the MR element.

TDA5155

8.2 Write mode

To minimize power dissipation, the read circuitry may be disabled in write mode. The write circuitry is disabled in read, sleep and standby modes. In write mode, a programmable current is forced through the selected two-terminal inductive write head. The push-pull output drivers yield near rail-to-rail voltage swings for fast current polarity switching.

The write data input can be either voltage or current input (see Chapter 12). In voltage mode, the differential write data inputs WDIx(v) and WDIy(v) are PECL (Positive Emitter Coupled Logic) compatible. The write data flip-flop can either be used or passed-by. In the case that the write data flip-flop is used, current polarity is toggled at the falling edges of

data

WDIx v()VWDIy v()

------------------------------------------------------

Switching to write mode initializes the data flip-flop so that the write current flows in the write head from x to y. In the case that the write data flip-flop is not used, the signal polarity is non-inverting from x and y inputs to x and y outputs.

The write current magnitude is controlled through on-chip DACs. The write current is defined as follows:

10kΩ

-------------- -

ext

–

20 16d4 8d3 4d2 2d1 d0+++++()=

An on-chip generated stable temperature reference voltage (1.32 V), available at the R

pin, is dropped

ext

across an external resistor (10 kΩ) to form a global reference current for the write and the MR bias currents. The MR bias current DACs are programmed through the serial interface according to the following formula:

10kΩ

0.5

10 16d4 8d3 4d2 2d1 d0+++++()×=

-------------- R

ext

(in mA), where d4-d0 are bits (either logic 0 or logic 1). At power-up all bits are set to logic 0, which results in a default MR current of 5 mA. The adjustable range of the MR currents is 5 mA to 20.5 mA. The MR bias currents are equal for the two stripes of each head. The gain amplifier is 1-bit programmable. The amplifier gain can be set to its nominal value or to the nominal value +3 dB.

(in mA), where d4-d0 are bits (either logic 0 or logic 1). The adjustable range of the write current is 20 mA to 51 mA. At power-up, the default values d4 = d3 = d2 = d1 = d0 = logic 0 are initialized, corresponding to I

= 20 mA. IWR is the current provided

by the write drivers: the current in the write coil and in the damping resistor together. The static current in the write coil is

---------------- R

------ R

where R R

is the resistance of the coil including leads and

is the damping resistor.

1997 Apr 08 8

+ 16 hidden pages

Philips TDA5155X Datasheet

CONTENTS

1 FEATURES

2 APPLICATIONS

3 GENERAL DESCRIPTION

4 ORDERING INFORMATION

5 QUICK REFERENCE DATA

6 BLOCK DIAGRAM

7 PINNING

8 FUNCTIONAL DESCRIPTION

8.1 Read mode

8.2 Write mode