Philips TDA1561Q-N2, TDA1561Q-N1 Datasheet

DATA SH EET
Preliminary specification Supersedes data of 1997 Jun 11 File under Integrated Circuits, IC01
1997 Aug 14
INTEGRATED CIRCUITS
TDA1561Q
1997 Aug 14 2
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
FEA TURES
Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode
High Common Mode Rejection Ratio (CMRR)
Mute/standby/operating/SE-only (mode select pin)
Zero crossing mute and standby circuit
Load dump protection circuit
Short-circuit safe to ground, to supply voltage and
across load
Loudspeaker protection circuit
Device switches to single-ended operation at excessive
junction temperatures.
GENERAL DESCRIPTION
The TDA1561Q is a monolithic power amplifier in a 13 lead single-in-line (SIL) plastic power package. It contains two identical 23 W amplifiers. The dissipation is minimized by switching from SE to BTL mode, only when a higher output voltage swing is needed. The device is primarily developed for car radio applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
supply voltage DC biased 6.0 14.4 18 V
non operating −−30 V load dump −−50 V
I
ORM
repetitive peak output current −−4A
I
q(tot)
total quiescent current RL= ∞−95 150 mA
I
stb
standby current 150µA
Z
i
input impedance 60 k
P
o
output power RL = 4 ; EIAJ 36 W
THD 10% 21 23 W
G
v
voltage gain 31 32 33 dB
CMRR common mode rejection ratio f = 1 kHz; R
s
=0Ω−80 dB
SVRR supply voltage ripple rejection f = 1 kHz; R
s
=0 45 55 dB
∆V
O
DC output offset voltage −−150 mV
α
cs
channel separation Rs=0k 40 60 dB
∆G
v
channel unbalance −−1dB
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA1561Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6
1997 Aug 14 3
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MLD214
REFERENCE
SOURCES
MUTE/STANDBY
THERMAL/
SHORT-CIRCUIT
PROTECTION
HIGHER
TEMPERATURE
BTL DISABLE
0.5V
P
MUTE
R
MUTE
R
7
V
P
12
3
13
2
1
IN1
IN2
CIN
MODE
1/2R
HV
4
GND1
10
GND2
6
5
11
9
8
OUT2
OUT2
OUT1
OUT1
C
TDA1561Q
P
11
1997 Aug 14 4
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
PINNING
SYMBOL PIN DESCRIPTION
IN1 1 input 1 HV
P
2 half supply voltage control input MODE 3 mute/standby/operating/SE-only GND1 4 ground 1 OUT1 5 inverting output 1 OUT1 6 non-inverting output 1 V
P
7 supply voltage OUT2 8 inverting output 2 OUT2 9 non-inverting output 2 GND2 10 ground 2 C
11
11 electrolytic capacitor for
single-ended (SE) mode CIN 12 common input IN2 13 input 2
Fig.2 Pin configuration.
handbook, halfpage
MLD215
1 2 3 4 5 6 7 8
9 10 11 12 13
TDA1561Q
IN1
HV
GND1
OUT1
V
MODE
OUT1
OUT2
11
C
CIN
IN2
GND2
OUT2
P
P
1997 Aug 14 5
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
FUNCTIONAL DESCRIPTION
The TDA1561Q contains two identical amplifiers with differential inputs. At low output power (up to output amplitudes of 3 V (RMS) at VP= 14.4 V), the device operates as a normal SE amplifier. When a larger output voltage swing is needed, the circuit switches internally to BTL operation.
With a sine wave input signal the dissipation of a conventional BTL amplifier up to 2 W output power is more than twice the dissipation of the TDA1561Q (see Fig.9).
In normal use, when the amplifier is driven with music-like signals, the high (BTL) output power is only needed for a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the dissipation of a conventional BTL amplifier with the same output power is approximately 70% higher (see Fig.10).
The heatsink has to be designed for use with music signals. With such a heatsink, the thermal protection will disable the BTL mode when the junction temperature exceeds 145 °C. In this case the output power is limited to 5 W per amplifier.
The gain of each amplifier is internally fixed at 32 dB. With the MODE pin, the device can be switched to the following modes:
Standby with low standby current (<50 µA)
Mute condition, DC adjusted
On, operation
SE-only, operation (BTL disabled).
The device is fully protected against short-circuiting of the output pins to ground and to the supply voltage. It is also protected against short-circuiting the loudspeaker and high junction temperatures. In the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off causing a low dissipation. With permanent short-circuiting of the loudspeaker, the output stage will be repeatedly switched on and off. The duty cycle in the ‘on’ condition is low enough to prevent excessive dissipation.
To avoid plops during switching from ‘mute’ to ‘on’ or from ‘on’ to ‘mute/standby’ while an input signal is present, a built-in zero-crossing detector allows only switching at zero input voltage. However, when the supply voltage drops below 6 V (e.g. engine start), the circuit mutes immediately avoiding clicks coming from electronic circuitry preceding the power amplifier.
The voltage of the SE electrolytic capacitor (pin 11) is always kept at 0.5V
P
by means of a voltage buffer (see Fig.1). The value of this capacitor has an important influence on the output power in SE mode, especially at low signal frequencies, a high value is recommended to minimize dissipation at low frequencies.
1997 Aug 14 6
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. The value of R
th(c-h)
depends on the application (see Fig.3).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating 18 V
non operating 30 V load dump; tr> 2.5 ms 50 V
V
P(sc)
short-circuit safe voltage 18 V
V
rp
reverse polarity voltage 6V
I
OSM
non-repetitive peak output current 6A
I
ORM
repetitive peak output current 4A
P
tot
total power dissipation 60 W
T
stg
storage temperature 55 +150 °C
T
vj
virtual junction temperature 150 °C
T
amb
operating ambient temperature 40 −°C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-c)
thermal resistance from junction to case see note 1 1.3 K/W
R
th(j-a)
thermal resistance from junction to ambient 40 K/W
1997 Aug 14 7
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
Heatsink design
There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode.
With a conventional BTL amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 5 W. At a virtual junction temperature of 150 °C and a maximum ambient temperature of 60 °C, R
th(vj-c)
= 1.3 K/W and
R
th(c-h)
= 0.2 K/W, the thermal resistance of the heatsink
should be:
Compared to a conventional BTL amplifier, the TDA1561Q has a higher efficiency. The thermal resistance of the heatsink should be:
150 60
25×
----------------------
1.3 0.2 7.5 K/W=
1.7
150 60
25×
----------------------


1.3 0.2 13.8 K/W=
Fig.3 Thermal equivalent resistance network.
handbook, halfpage
3.6 K/W
0.6 K/W
3.6 K/W
virtual junction
OUT 1 OUT 1
case
3.6 K/W
0.6 K/W
3.6 K/W
OUT 2 OUT 2
MGC424
0.1 K/W
1997 Aug 14 8
Philips Semiconductors Preliminary specification
2 × 23 W high efficiency car radio power amplifier
TDA1561Q
DC CHARACTERISTICS
V
P
= 14.4 V; T
amb
=25°C; measured in Fig.6; unless otherwise specified.
Note
1. The circuit is DC biased at V
P
= 6 to 18 V and AC operating at VP=8to18V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
P
supply voltage note 1 6.0 14.4 18.0 V
I
q
quiescent current RL= ∞−95 150 mA
I
stb
standby current 150µA
V
C
average electrolytic capacitor voltage at pin 11
7.1 V
∆V
O
DC output offset voltage on state −−150 mV
mute state −−50 mV Mode select switch (see Fig.4) V
ms
voltage at mode select pin (pin 3)
standby condition 0 1V
mute condition 2 3V
on condition (SE/BTL mode) 4 5.5 V
on condition (SE mode only) 7.5 V
P
V
I
ms
switch current through pin 3 Vms=5V −−40 µA
Protection
T
dis
BTL disable temperature 145 −°C
Fig.4 Switching levels of mode select switch.
handbook, halfpage
,,,,,
,
0
MLD216
V
1
2
3
4
5
6
7
8
P
SE Only
SE/BTL
Standby
Mute
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