Philips TDA1560Q Datasheet

INTEGRATED CIRCUITS

DATA SHEET

TDA1560Q

40 W car radio high power amplifier

Product specification

1996 May 14

Supersedes data of 1995 Jul 07

File under Integrated Circuits, IC01

Philips Semiconductors	Product specification
40 W car radio high power amplifier	TDA1560Q

FEATURES

·Very high output power

·Low power dissipation when used for music signals

·Switches to low output power in the event of excessive heatsink temperatures

·Requires few external components

·Fixed gain

·Low cross-over distortion

·No switch-on/switch-off plops

·Mode select switch

·Low offset voltage at the output

·Load dump protection

·Short-circuit safe to ground, VP and across load

·Protected against electrostatic discharge

·Thermally protected

·Diagnostic facility

·Flexible leads.

QUICK REFERENCE DATA

GENERAL DESCRIPTION

The TDA1560Q is an integrated Bridge-Tied Load (BTL) class-H high power amplifier. In a load of 8 W, the output power is 40 W typical at a THD of 10%.

The encapsulation is a 17-lead DIL-bent-SIL plastic power package. The device is primarily developed for car radio applications.

SYMBOL	PARAMETER		CONDITIONS	MIN.	TYP.	MAX.	UNIT
VP	supply voltage		operating	8.0	14.4	18	V
			non-operating	-	-	30	V
			load dump protected	-	-	45	V
IORM	repetitive peak output current			-	-	4	A
Iq(tot)	total quiescent current			-	100	160	mA
Isb	standby current			-	5	50	mA
Gv	voltage gain			29	30	31	dB
Po	output power		RL = 8 W; THD = 10%	-	40	-	W
			RL = 8 W; THD = 0.5%	-	30	-	W
SVRR	supply voltage ripple rejection		fi = 100 Hz to 10 kHz;	48	55	-	dB
			RS = 0 W
Vno	noise output voltage			-	100	300	mV
ïZiï	input impedance			180	300	-	kW
ïDVOï	DC output offset voltage			-	-	150	mV
ORDERING INFORMATION
TYPE NUMBER			PACKAGE
	NAME		DESCRIPTION			VERSION
TDA1560Q	DBS17P	plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)				SOT243-1

1996 May 14

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Philips Semiconductors	Product specification
40 W car radio high power amplifier	TDA1560Q
BLOCK DIAGRAM

				C1		VP
			C1n	C1p
			13	10		9
	10 kΩ		disable
17			SUPPLY
	TEMPERATURE
S1		SENSOR
					TDA1560Q
			VP				14
							VDIAG
1							7
							OUT1n
INPp				POWER
	150
				STAGE	LOAD DUMP
	kΩ
					TEMPERATURE
	150				AND CURRENT
				POWER	PROTECTION
	kΩ
2
				STAGE			11
INPn
							OUT2p
		INPUT AND
		FEEDBACK	VP
4		CIRCUIT
Vref
16		15 kΩ
MODE
3		voltage	SUPPLY
			disable
GND		reference
	15		5	8	12	6	MCD334 - 1
	CDEC		C2n	C2p	GND	GND
				C2

Fig.1 Block diagram.

1996 May 14

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Philips Semiconductors									Product specification
40 W car radio high power amplifier									TDA1560Q
PINNING
SYMBOL	PIN	DESCRIPTION
INPp	1	positive input		handbook, halfpage
				INPp			1
INPn	2	negative input
				INPn			2
GND	3	ground
				GND			3
Vref	4	reference voltage
				V
C2n	5	capacitor C2 negative terminal			ref		4
GND	6	ground		C2n			5
OUT1n	7	output 1 (negative)		GND
							6
C2p	8	capacitor C2 positive terminal		OUT1
						n	7
VP	9	supply voltage
				C2p			8
C1p	10	capacitor C1 positive terminal
				VP			9	TDA1560Q
OUT2p	11	output 2 (positive)
GND	12	ground		C1p			10
C1n	13	capacitor C1 negative terminal		OUT2p			11
VDIAG	14	diagnostic voltage output
				GND			12
CDEC	15	decoupling
				C1n			13
MODE	16	mode select switch input		V DIAG
							14
S1	17	class-B/class-H input switch		C DEC
							15
				MODE			16
					S1		17
								MCD329 - 1
				Fig.2				Pin configuration.

1996 May 14

4

Philips Semiconductors	Product specification
40 W car radio high power amplifier	TDA1560Q

FUNCTIONAL DESCRIPTION

The TDA1560Q contains a mono class-H BTL output power amplifier. At low output power, up to 10 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted to approximately twice the external supply voltage. This extra supply voltage is obtained from the charge in the external electrolytic capacitors. Due to this momentarily higher supply voltage, the maximum output power is 40 W typical at a THD of 10%.

In normal use, when the output is driven with music-type signals, the high output power is only required for a small percentage of the time. Assuming a music signal has a normal (Gaussian) amplitude distribution, the reduction in dissipation is approximately 50% when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals.

If the device is continuous sine wave driven, instead of driven with music signals and at a high output power (class-H operation), the case temperature can rise above 120 °C with such a practical heatsink. In this event, the thermal protection disables the high power supply voltage and limits the output power to 10 W and the maximum dissipation to 5 W.

The gain of each amplifier is internally fixed at 30 dB. With the mode select input the device can be switched to the following modes:

·Low standby current (<50 mA)

·Mute condition, DC adjusted

·On, operation in class-B, limited output power

·On, operation in class-H, high output power.

The device can be used as a normal BTL class-AB amplifier if the electrolytic capacitors C1 and C2 are omitted; see Fig.6. If the case temperature exceeds

120 °C, the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 10 W. By measuring the voltage on the class-B/class-H pin, the actual crystal temperature can be detected.

The open voltage on the class-B/class-H pin is related to the global temperature of the crystal. By measuring this voltage, external actions can be taken to reduce an excessive temperature (e.g. by cutting off low frequencies or externally switching to class-B). For the relationship between the crystal temperature and the voltage on this pin, see Fig.3.

By forcing a high voltage level on the class-B/class-H pin, thereby simulating a high temperature, the device can be externally switched to class-B operation. Similarly, by forcing a low voltage level on the class-B/class-H pin, thereby simulating a low temperature, the device can be forced into class-H operation, even if the case temperature exceeds 120 °C.

The device is fully protected against short-circuiting of the outputs to ground or VP and across the load, high crystal temperature and electrostatic discharge at all input and output pins. In the event of a continuing short-circuit to ground or VP, excessive dissipation is prevented because the output stages will be switched off. The output stages will be switched on again within 20 ms after the short-circuit has been removed.

A diagnostic facility is available at pin 14. In normal conditions the voltage at this pin will be the supply voltage (VP). In the event of the following conditions:

·Junction temperature exceeds 150 °C

·Short-circuit of one of the outputs to ground or to VP

·Load dump; VP > 20 V.

The voltage level at pin 14 will be at a constant level of approximately 1¤2VP during fault condition. At a short-circuit over the load, pin 14 will be at 1¤2VP for approximately

20 ms and VP for approximately 50 ms.

1996 May 14

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