Philips TDA1011 User Manual
查询TDA1011供应商
INTEGRATED CIRCUITS
DATA SH EET
TDA1011
2 to 6 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
Philips Semiconductors Product specification
2 to 6 W audio power amplifier TDA1011
The TDA1011 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The
device can deliver up to 6 W into 4 Ω at 16 V loaded supply in mains-fed applications. The maximum permissible supply
voltage of 24 V makes this circuit very suitable for d.c. and a.c. apparatus, while the very low applicable supply voltage
of 3,6 V permits 6 V applications. Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• thermal protection
• high input impedance
• low current drain
• limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range V
Peak output current I
Output power at d
= 16 V; RL = 4 Ω P
V
P
V
= 12 V; RL = 4 Ω P
P
= 9 V; RL = 4 Ω P
V
P
= 6 V; RL = 4 Ω P
V
P
Total harmonic distortion at P
= 10%
tot
= 1 W; RL = 4 Ω d
o
Input impedance
preamplifier (pin 8) |Z
power amplifier (pin 6) |Z
Total quiescent current I
Operating ambient temperature T
Storage temperature T
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 July 23.
P
OM
o
o
o
o
tot
| > 100 kΩ
i
| typ. 20 kΩ
i
tot
amb
stg
3,6 to 20 V
max. 3 A
typ. 6,5 W
typ. 4,2 W
typ. 2,3 W
typ. 1,0 W
typ. 0,2 %
typ. 14 mA
−25 to + 150 °C
−55 to +150 °C
November 1982 2
Philips Semiconductors Product specification
2 to 6 W audio power amplifier TDA1011
November 1982 3
Fig.1 Circuit diagram.
Philips Semiconductors Product specification
2 to 6 W audio power amplifier TDA1011
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage V
Peak output current I
P
OM
Total power dissipation see derating curve Fig.2
Storage temperature T
Operating ambient temperature T
stg
amb
A.C. short-circuit duration of load
during sine-wave drive; VP = 12 V t
sc
max. 24 V
max. 3 A
−55 to + 150 °C
−25 to + 150 °C
max. 100 hours
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume V
= 12 V; RL = 4 Ω; T
P
= 60 °C maximum; Po = 3,8 W.
amb
The maximum sine-wave dissipation is 1,8 W.
The derating of 10 K/W of the package requires the following external heatsink (for sine-wave drive):
R
= R
th j-a
Since R
+ R
th j-tab
= 10 K/W and R
th j-tab
th tab-h
+ R
th h-a
th tab-h
150 60–
= = 50 K/W.
---------------------18,
= 1 K/W, R
= 50 − (10 + 1) = 39 K/W.
th h-a
November 1982 4
Philips Semiconductors Product specification
2 to 6 W audio power amplifier TDA1011
D.C. CHARACTERISTICS
Supply voltage range V
Repetitive peak output current I
Total quiescent current at V
= 12 V I
P
P
ORM
tot
3,6 to 20 V
<2A
typ. 14 mA
<22mA
A.C. CHARACTERISTICS
= 25 °C; VP = 12 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
T
amb
A.F. output power at d
= 10% (note 1)
tot
with bootstrap:
= 16 V; RL = 4 Ω P
V
P
= 12 V; RL = 4 Ω P
V
P
VP= 9 V; RL = 4 Ω P
= 6 V; RL = 4 Ω P
V
P
typ. 6,5 W
o
> 3,6 W
o
typ. 4,2 W
typ. 2,3 W
o
typ. 1,0 W
o
without bootstrap:
= 12 V; RL = 4 Ω P
V
P
typ. 3,0 W
o
Voltage gain:
preamplifier (note 2) G
power amplifier G
total amplifier G
Total harmonic distortion at P
= 1,5 W d
o
typ. 23 dB
v1
21 to 25 dB
typ. 29 dB
v2
27 to 31 dB
typ. 52 dB
v tot
50 to 54 dB
typ. 0,3 %
tot
<1%
Frequency response; −3 dB (note 3) B 60 Hz to 15 kHz
Input impedance:
> 100 kΩ
preamplifier (note 4) |Z
power amplifier |Z
Output impedance preamplifier |Z
|
i1
typ. 200 kΩ
| typ. 20 kΩ
i2
| typ. 1 kΩ
o1
Output voltage preamplifier (r.m.s. value)
< 1% (note 2) V
d
tot
o(rms)
> 0,7 V
Noise output voltage (r.m.s. value; note 5)
= 0 Ω V
R
S
= 10 kΩ
R
S
V
typ. 0,2 mV
n(rms)
typ. 0,6 mV
n(rms)
< 1,4 mV
Noise output voltage at f = 500 kHz (r.m.s. value)
B = 5 kHz; R
= 0 Ω V
S
typ. 8 µV
n(rms)
November 1982 5
Loading...