Philips si2304ds Datasheet

M3D088

1. Description

2. Features

3. Applications

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 17 August 2001 Product data

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology

Product availability:

SI2304DS in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Subminiature surface mount package.

■ Battery management

■ High speed switch

■ Low power DC to DC converter.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 source (s) 3 drain (d)

12

Top view

3

MSB003

SOT23

g

MBB076

d

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V I

D

P T R

DS

tot j DSon

drain-source voltage (DC) Tj=25to150°C −−30 V drain current (DC) Tsp=25°C; VGS=5V −−1.7 A total power dissipation Tsp=25°C −−0.83 W junction temperature −−150 °C drain-source on-state resistance VGS=10V; ID= 500 mA −−117 mΩ

= 4.5 V; ID= 500 mA −−190 mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 30 V drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−30 V gate-source voltage (DC) −±20 V drain current (DC) Tsp=25°C; VGS=5V;Figure 2 and 3 − 1.7 A

= 100 °C; VGS=5V;Figure 2 and 3 − 1.1 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs − 7.5 A total power dissipation Tsp=25°C; Figure 1 − 0.83 W storage temperature −65 +150 °C operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 0.83 A peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs − 3.3 A

9397 750 08526

Product data Rev. 01 — 17 August 2001 2 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa17

(oC)

T

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

2

10

I

D

(A)

R

= VDS / I

10

DSon

120

I

der

(%)

100

80

60

40

20

0

0 50 100 150 200

03aa25

T

(oC)

sp

VGS≥ 10 V

I

der

D

-------------------

I

°

D25C

()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

003aaa120

D

1

t

P

-1

10

t

p

-2

10

-1

10

p

δ =

T

t

T

11010

D.C.

tp = 10 µs

1 ms

10 ms

100 ms

VDS (V)

2

Tsp=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 08526

Product data Rev. 01 — 17 August 2001 3 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 100 K/W

7.1 Transient thermal impedance

003aaa121

t

p

δ =

T

t

T

tp (s)

10

1

Z

th(j-sp)

(K/W)

3

10

2

10

δ =

0.02

0.05

10

0.1

0.2

0.5

1

-4

10

Single pulse

-3

10

-2

10

P

t

p

-1

10

Fig 4. Transient thermal impedance from junction to solder point as a function of

pulse duration.

9397 750 08526

Product data Rev. 01 — 17 August 2001 4 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

drain-source breakdown voltage ID=10µA; VGS=0V

=25°C3040− V

T

j

= −55 °C27−−V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 1.5 2 − V

T

j

= 150 °C 0.5 −−V

T

j

= −55 °C −−2.7 V

T

j

drain-source leakage current VDS=30V; VGS=0V

=25°C − 0.01 0.5 µA

T

j

= 150 °C −−10 µA

T

j

gate-source leakage current VGS= ±10 V; VDS=0V − 10 100 nA drain-source on-state resistance VGS= 10 V; ID= 500 mA; Figure 7 and 8

=25°C −−117 mΩ

T

j

= 4.5 V; ID= 500 mA

V

GS

=25°C −−190 mΩ

T

j

= 150 °C −−300 mΩ

T

j

forward transconductance VDS=10V; ID= 1 A 1.4 2.5 − S total gate charge VDD=15V; VGS=10V; ID= 0.5 A; Figure 13 − 4.6 nC gate-source charge − 0.6 − nC gate-drain (Miller) charge − 1.35 1.83 nC input capacitance VGS=0V; VDS= 10 V; f = 1 MHz; Figure 11 − 147 195 pF output capacitance − 65 78 pF reverse transfer capacitance − 41 56 pF turn-on delay time VDD=15V; RL=15Ω; VGS=10V − 46ns rise time − 7.5 12 ns turn-off delay time − 18 35 ns fall time − 13 19 ns

source-drain (diode forward) voltage IS= 0.83 A; VGS=0V;Figure 12 − 0.7 1.2 V reverse recovery time IS= 1 A; dIS/dt = −100 A/µs; VGS=0V;

=25V

V

DS

− 69 − ns

9397 750 08526

Product data Rev. 01 — 17 August 2001 5 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

003aaa123

= 150 oC

VGS (V)

DSon

003aaa125

VGS (V) =

VDS (V)

003aaa122

3.5

3.0

2.5

4

10.0

I

D

(A)

3

2

1

0

0 0.5 1.0 1.5

8.0

5.0

4.0

Tj=25°CT

Fig 5. Output characteristics: drain current as a

Fig 6. Transfer characteristics: drain current as a

function of drain-source voltage; typical values.

003aaa124

3.5

5.0

8.0

10.0

R

DSon

(Ω)

0.5

0.4

0.3

0.2

0.1

V

(V) =

GS

5

I

VDS > ID x R

D

(A)

4

3

2

1

0

012345

=25°C and 175 °C; VDS> ID× R

j

DSon

Tj = 25 oC

function of gate-source voltage; typical values.

2.0

a

1.6

1.2

0.8

0.4

0

1

2

ID (A)

3

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 08526

Fig 8. Normalized drain source on-state resistance

0

-20

-60

a

20

R

DSon

=

----------------------------- -

R

DSon 25°C()

100

140 180

Tj (oC)

60

factor as a function of junction temperature.

Product data Rev. 01 — 17 August 2001 6 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

max

typ

min

GS

03aa32

(oC)

T

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

3

10

C

(pF)

2

10

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

01 2

3

03aa35

maxtypmin

5

4

(V)

V

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

003aaa126

C

iss,

C

oss,

C

rss

10

-1

10

11010

VDS (V)

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 08526

Product data Rev. 01 — 17 August 2001 7 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

0.6

003aaa127

Tj = 25 oC

VSD (V)

0.8

10

V

GS

(V)

8

6

4

2

0

2.0

I

S

(A)

1.0

0

0.2

Tj = 150 oC

0.4

Tj=25oC and 150oC; VGS=0V ID= 0.5 A; VDD=15V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa128

024 68

QG (nC)

9397 750 08526

Product data Rev. 01 — 17 August 2001 8 of 12

Philips Semiconductors

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

9. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

3.0

0.09

2.8

IEC JEDEC EIAJ

E

1.4

1.9

1.2

REFERENCES

e

H

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

0.95

1

2.5

2.1

Fig 14. SOT23.

9397 750 08526

Product data Rev. 01 — 17 August 2001 9 of 12

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010817 - Product data; initial version

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

9397 750 08526

Product data Rev. 01 — 17 August 2001 10 of 12

Philips Semiconductors

11. Data sheet status

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

Data sheet status

Objective data Development Thisdata sheetcontains data fromthe objective speciﬁcationforproduct development. PhilipsSemiconductors

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation orwarranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2]

Deﬁnition

reserves the right to change the speciﬁcation in any manner without notice.

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes norepresentationsor warranties thattheseproducts are free from patent,copyright, or mask work rightinfringement, unlessotherwise speciﬁed.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

9397 750 08526

Product data Rev. 01 — 17 August 2001 11 of 12

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

SI2304DS

N-channel enhancement mode ﬁeld-effect transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 17 August 2001 Document order number: 9397 750 08526