Philips SA910 Datasheet

INTEGRATED CIRCUITS

SA910

Variable gain RF predriver amplifier

Product specification 1997 Aug 12

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Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

DESCRIPTION

The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-ef fective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10µA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process.

FEATURES

•MMIC BiCMOS predriver amplifier

•Low voltage 2.7 to 5.5V single supply operation

•820 to 905MHz bandwidth

•High power gain >20dB

•High power output >23dBm (typical) @ 3V

•Efficiency = 35% (typical)

•Wide gain control range: >32dB

•Few external components required

•Integrated power detector and comparison gain control circuitry

•50Ω input, open-collector output

•SSOP-20 package

•Integrated regulator with offset adjustment for biasing an external

output stage

PIN CONFIGURATION

V V

OUTLPF

V

BIAS

CC

CC1

REF

GND RF

GND GND

GND

1 2 3 4

IN

5 6 7 8 9

V

C

10

20 19 18 17 16 15 14 13 12 11

P

SENSE

BIAS

OUT

GND RF

OUT1

GND GND

RF

OUT2

GND PWRUP

OFFSET

SR01067

APPLICATIONS

•900MHz analog cellular

•Handheld transmitting equipment in the 820 to 905MHz frequency

range

•Cordless phone

1997 Aug 12 853–2021 18269

2

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

C1 10NF

GND

OUT1 GND

GND

OUT2

GND

20

19

18

17

16

15

14

13

12

11

ADJUST

BIAS

L1 33nH

POWER

UP

L3

1.8nH

C5 33pF

C4

8.2PF

C8 33pF

C7 33PF

3.3nH

L2

BIAS OUT

2

V

CC

+3.6V

W = 55MILS L = 180MILS H = 62MILS FR–4

2

V

CC

+3.6V

C9

0.5PF

C6

5.6PF

RF OUT 50

VCC1 +3V

RF

VCC1 +3V

Vref

IN

VC

C3 100NF

C2 10NF

R1 1K

1

2

3

4 5

6

7 8

9

10

V

CC1

V

REF

GND

RF

IN

GND

OUT LPF

GND V

C

V BIAS

CC

P SENSE

BIAS OUT

RF

SA910

RF

PWR UP OFFSET

Figure 1. Application Diagram

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Plastic SSOP (Shrink Small Outline Package) -40 to +85°C SA910

SR01535

SOT266-1

1997 Aug 12

3

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

Notes: All caps are MMC 0603, Inductors: Toko LL2012

1997 Aug 12

SR01547

Figure 2. Application Board Layout of SA910

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