Philips SA3600 Datasheet

INTEGRATED CIRCUITS

SA3600

Low voltage dual-band RF front-end

Product specification Supersedes data of 1999 March 18

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1999 Nov 02

Philips Semiconductors Product specification

TYPE NUMBER

SA3600Low voltage dual-band RF front-end

DESCRIPTION

The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz f

BiCMOS process—QUBiC2.

The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.

The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.

FEATURES

•Low current consumption: LB I

= 14.5 mA; HB ICC = 20.5 mA

•Outstanding low- and high-band noise figure

•LNAs with gain control (30 dB gain step)

•LO input and output buffers

•Selectable frequency doubler

•On chip logic for network selection and power down

•Very small outline package

APPLICATIONS

•800 to 1000 MHz analog and digital receivers

•1800 to 2000 MHz digital receivers

•Portable radios

•Mobile communications equipment

PIN CONFIGURATION

HB_LNA_OUT

GND

HB_LNA_IN

HB_MXR+_IN

HB_MXR–_IN

PD1

GND

HB_VCO_OUT

PD2

GND

LB_VCO_OUT

1 2 3 4

5 6 7 8

9 10 11 12 13

LB_LNA_OUT

24 23

GND

LB_LNA_IN

LB_MXR_IN

GND

MXR+_OUT

MXR–_OUT

GND

LB_VCO_IN PD3

HB_VCO_IN

SR01596

ORDERING INFORMA TION

PACKAGE

NAME DESCRIPTION VERSION

SA3600 TSSOP24 Plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355–1

PIN DESCRIPTIONS

PIN NO.

PIN NAME DESCRIPTION

1 HB_LNA_OUT Highband LNA output 13 HB_VCO_IN Highband VCO input 2 GND Ground 14 PD3 Power down control 3 3 HB_LNA_IN Highband LNA input 15 LB_VCO_IN Lowband VCO input 4 Vcc Power supply 16 GND Ground 5 HB_MXR+_IN Highband mixer positive input 17 MXR–_OUT Mixer negative output 6 HB_MXR–_IN Highband mixer negative input 18 MXR+_OUT Mixer positive output 7 PD1 Power down control 1 19 GND Ground 8 GND Ground 20 LB_MXR_IN Lowband mixer input

9 HB_VCO_OUT Highband VCO buffered output 21 V 10 PD2 Power down control 2 22 LB_LNA_IN Lowband LNA input 11 GND Ground 23 GND Ground 12 LB_VCO_OUT Lowband VCO buffered output 24 LB_LNA_OUT Lowband LNA output

PIN NO.

PIN NAME DESCRIPTION

Power supply

1999 Nov 02 853–2183 22617

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

BLOCK DIAGRAM

LB_LNA_OUT

GND

LB_LNA_IN

LB_MXR_IN

GND

MXR+_OUT

MXR–_OUT

GND

LB_VCO_IN

PD3

HB_VCO_IN

SR01594

HB_LNA_OUT

GND

HB_LNA_IN

HB_MXR+_IN

HB_MXR–_IN

PD1

GND

HB_VCO_OUT

PD2

GND

LB_VCO_OUT

12 13

SA3600

Figure 1. Block Diagram

MODE SELECT LOGIC

PD1 PD2 PD3 OPERATING MODE

0 0 0 Sleep mode off off off off off off off 0 0 1 Tx mode, LO lowband buffer off off off off off on off 0 1 0 Rx mode cellular, low gain off on off off off on off 0 1 1 Rx mode cellular, high gain on on off off off on off 1 0 0 Rx mode PCS, low gain, x2 off off off on on on off 1 0 1 Rx mode PCS, high gain, x2 off off on on on on off 1 1 0 Rx mode PCS, low gain, no x2 off off off on off off on 1 1 1 Rx mode PCS, high gain, no x2 off off on on off off on

Cel

LNA

Cel

MXR

PCS LNA

PCS MXRx2DBL

LB LO

O/P

HB LO

O/P

1999 Nov 02

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

OPERA TION

The SA3600 is a highly integrated dual-band radio frequency (RF) front-end integrated circuit (IC) targeted for TDMA applications. This IC is split into separate low-band (LB) and high-band (HB) receivers. The LB receiver contains a low noise amplifier (LNA) and mixer that are designed to operate in the cellular frequency range (869–894MHz). The HB receiver contains an LNA and mixer that are designed to operate in the PCS frequency range (1930–1990 MHz). The SA3600 also contains a frequency doubler that can drive the HB mixer local oscillator (LO) port, allowing a single-band voltage controlled oscillator (VCO) to be used to drive both mixers. Modes for bypassing the doubler are also provided, in the case where a dual-band VCO is used.

The SA3600 has eight modes of operation that control the LNAs, mixers, LO buffers and doubler . The select pins (PD1,2,3) are used to change modes of operation. The internal select logic powers the device down (0,0,0), turns on the LB LO buffer for use in transmit mode (0,0,1), enables cellular receive mode for high and low gain (0,1,X), enables PCS receive mode for high and low gain both without doubler (1,1,X) and with doubler (1,0,X).

Low-Band Receive Section

The LB circuit contains a LNA followed by a wide dynamic range active mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential and are combined with the high-band IF mixer outputs thereby eliminating the need for extra output pins. External inductors and capacitors can be used to convert the differential mixer outputs to single-ended. Furthermore, the LNA provides two gain settings: high gain (17dB) and low gain (–15 dB). The desired gain state can be selected by setting the logic pins (PD1,PD2,PD3) appropriately.

High-Band Receive Section

The HB circuit contains a LNA followed by a Gilbert cell mixer with differential inputs. The LNA output uses an internal pull-up inductor to VCC , which eliminates the need for an external pull-up. The mixer IF outputs are differential and are combined with the low-band IF mixer outputs thereby eliminating the need for extra output pins. Similar to the LB LNA, the HB LNA has two gain settings: high gain (16 dB) and low gain (–15 dB).

Control Logic Section

Pins PD1, PD2, and PD3, control the logic functions of the SA3600. The PD1 selects between LB and HB operations. In LB receive mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are (0,1,1). In all other modes, the LB LNA is off. The LB mixer is on when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off. During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is on, enabling use of the LO signal for the transmitter.

In HB receive mode, the HB LNA is in high gain mode (or on) when PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes. The on-chip frequency doubler (X2) is on in (1,0,X) modes. When the frequency doubler is on, the input signal from the LB LO buffer is doubled in frequency, which can then be used to drive the HB mixer LO port. The frequency doubler can also be bypassed in modes (1,1,X), in which case the HB mixer is driven directly by an external 2 GHz LO signal.

Local Oscillator (LO) Section

The LB LO buffers are on for all modes except sleep mode, when PD1,2,3 are (0,0,0), and for HB receive mode without doubler, PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3 are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO input buffers, which minimizes the pulling effect on the external VCO when entering receive or transmit mode.

1999 Nov 02

Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNITS

SYMBOL

PARAMETER

UNIT

SA3600Low voltage dual-band RF front-end

ABSOLUTE MAXIMUM RATINGS

V V P T P I

MAX

T T

CC IN D J MAX MAX

STG O

Supply voltage –0.3 +4.5 V Voltage applied to any other pin –0.3 VCC+0.3 V Power dissipation, T

amb

Maximum junction temperature 150 °C Power input/output +20 dBm DC current into any I/O pin –10 +10 mA Storage temperature range –65 +150 °C Operating temperature –40 +85 °C

= +25 °C (still air) 555 mW

NOTES:

1. IC is protected against ESD voltages up to 500 V (human body model).

DC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all Input/Output ports are single-ended.

DC PARAMETERS

= +3.0 V, T

BIAS

= +25°C unless otherwise specified

amb

TEST CONDITIONS TESTER LIMITS

PD1 PD2 PD3 MIN TYP MAX

Sleep mode 0 0 0 0.1 1 µA Tx mode, LO lowband buffer 0 0 1 4.3 5.5 mA Rx mode cellular, low gain 0 1 0 10.1 12 mA Rx mode cellular, high gain 0 1 1 14 16.5 mA Rx mode PCS, low gain, x2 1 0 0 17.5 21 mA Rx mode PCS, high gain, x2 1 0 1 23.5 28 mA Rx mode PCS, low gain, no x2 1 1 0 14.5 17.5 mA Rx mode PCS, high gain, no x2 1 1 1 20.5 24.5 mA Input HIGH voltage 0.5xV Input LOW voltage –0.3 0.2xV Input bias current Logic 1 or logic 0 –5 +5 µA

LIMITS

MIN. MAX.

VCC+0.3 V

1999 Nov 02

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

= +3.0 V, fRF = 881 MHz, fLO = 963 MHz, T

Cascaded Gain Section

SYS

BYP

LB LNA + Mixer, High Gain Filter loss = 3 dB 20.5 23.5 26.5 dB LB LNA + Mixer, Low Gain Filter loss = 3 dB –11.5 –8.5 –5.5 dB

Low-band LNA Section

IIP3

P1dB

IIP3

OUT

RF ENA

ENA

BYP

RF input frequency range 869 894 MHz Small signal gain ENABLED 16.1 17 17.9 dB Noise figure ENABLED 1.5 1.7 1.9 dB Input 3rd order Intercept Point –8.1 –7 –5.9 dBm

ENA

Input 1 dB Compression Point –20 dBm

ENA

Small signal gain BYPASSED –15 dB Noise figure BYPASSED 15 dB Input 3rd order Intercept Point 15 dBm

BYP

Input return loss Output return loss ENABLE/DISABLE speed

Low-band Mixer Section

IIP3

P1dB

OUT

MXR

LO IN

RF input frequency range 869 894 MHz IF output frequency range 70 200 MHz LO input range 939 1100 MHz Small signal gain PLO = –5 dBm 9 9.5 10 dB SSB Noise figure PLO = –5 dBm 8.6 9.5 10.4 dB Input 3rd order Intercept Point PLO = –5 dBm 5.1 6 6.9 dBm

MXR

Input 1 dB Compression Point P

MXR

LO input power range –7 –5 –3 dBm Input return loss Output return loss

Two-tone spurious rejection: PLO = –5 dBm

2-Tone

2(fRF–fTx), fRF–fTx=fIF/2

3(fRF–fTx), fRF–fTx=fIF/3

RF–LO RF to LO isolation 25 dB LO–RF LO to RF isolation 40 dB

ENABLE/DISABLE speed

Low-band LO Buffer Section

OUT

LO Input frequency range 939 1100 MHz LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm

LO Output power 50 Ω matched LB_VCO_OUT –8 –7.5 –7 dBm Input return loss Output return loss

Harmonic content PLO = –5 dBm –20 dBc

ENABLE/DISABLE speed

= +25°C, unless otherwise specified

amb

50 Ω system 10 dB 50 Ω system 10 dB

= –5 dBm –14 dBm

50 Ω system 10 dB 50 Ω system 10 dB

fRF=890.0 MHz @–36 dBm

fTx=848.9 MHz @–20 dBm

fRF=876.3 MHz @–36 dBm

fTx=848.9 MHz @–20 dBm

50 Ω system 10 dB 50 Ω system 10 dB

LIMITS

MIN. –3 σ TYP +3 σ MAX.

20 µs

–110

20 µs

dBm

1999 Nov 02

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

IIP3

IF/2 rej

dBm

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

= +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, T

Cascaded Gain Section

SYS

BYP

HB LNA + Mixer, High Gain Filter loss = 3 dB 18.5 21.5 24.5 dB HB LNA + Mixer, Low Gain Filter loss = 3 dB –12.5 –9.5 –6.5 dB

High-band LNA Section

IIP3

P1dB

IIP3

OUT

ENA

BYP

RF input frequency range 1930 1990 MHz Small signal gain ENABLED 15 16 17 dB Noise figure ENABLED 1.9 2.2 2.5 dB Input 3rd order Intercept Point –6.5 –5 –3.5 dBm

ENA

Input 1 dB Compression Point –14 dBm

ENA

Small signal gain BYPASSED –15 dB Noise figure BYPASSED 15 dB Input 3rd order Intercept Point 15 dBm

BYP

Input return loss

Output return loss 50 Ω system, ENA and BYP 10 dB ENABLE/DISABLE speed

High-band Mixer Section

MXR

RF input frequency range 1930 1990 MHz IF output frequency range 70 200 MHz LO input range 2000 2190 MHz Small signal gain PLO = –5 dBm 7.8 8.5 9.2 dB SSB Noise figure, doubler off PLO = –5 dBm 7.6 8.5 9.4 dB

MXR

SSB Noise figure, doubler on PLO = –5 dBm 8.1 9 9.9 dB Input 3rd order Intercept Point, doubler off PLO = –5 dBm 4 5.5 7 dBm

MXR

Input 3rd order Intercept Point, doubler on PLO = –5 dBm 1.9 3 4.1 dBm

P1dB

Input 1 dB Compression Point PLO = –5 dBm –14 dBm

MXR

Half-IF spurious rejection 2(fRF–fLO), fRF–fLO=fIF/2, doubler off

Half-IF spurious rejection

IF/3 rej.

2(f Third-IF spurious rejection

3(fRF–fLO), fRF–fLO=fIF/3

), fRF–fLO=fIF/2, doubler on

RF–fLO

Two-tone spurious rejection: PLO = –5 dBm,

2-tone

fRF–fTx, fRF–fTx=f

2(fRF–fTx), fRF–fTx=fIF/2

3(fRF–fTx), fRF–fTx=fIF/3

OUT

LO IN

LO input power range –7 –5 –3 dBm Input return loss Output return loss

RF–LO RF to LO isolation 40 dB LO–RF LO to RF isolation 30 dB

ENABLE/DISABLE speed

= +25°C, unless otherwise specified

amb

50 Ω system, ENA and BYP 10 dB

fRF=1972.0 MHz @–36 dBm

fLO=2013.1 MHz @–5 dBm

fRF=1985.7 MHz @–36 dBm

fLO=2013.1 MHz @–5 dBm

fRF=1933.0 MHz @–36 dBm

fTx=1850.8 MHz @–20 dBm

fRF=1951.0 MHz @–36 dBm

fTx=1909.9 MHz @–20 dBm

fRF=1937.3 MHz @–36 dBm

fTx=1909.9 MHz @–20 dBm

50 Ω system 10 dB 50 Ω system 10 dB

LIMITS

MIN. –3 σ TYP +3 σ MAX.

20 µs

–90

–85

–114 dBm

–70

–115

–125

20 µs

dBm

1999 Nov 02

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA3600Low voltage dual-band RF front-end

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0 V, T

High-band LO Buffer Section

OUT

x2 LO Doubler Section

OUT

NOTES:

1. Dependent on external components.

2. External matching required.

= +25°C, unless otherwise specified

amb

LIMITS

MIN. –3 σ TYP +3 σ MAX.

LO Input frequency range 2000 2190 MHz LO Input power 50 Ω matched HB_VCO_IN –7 –5 –3 dBm LO Output power 50 Ω matched HB_VCO_OUT –8.8 –8 –7.2 dBm Input return loss Output return loss

50 Ω system 10 dB

50 Ω system 10 dB Harmonic content PLO = –5 dBm –20 dBc ENABLE/DISABLE speed

20 µs

LO Input frequency 1000 1095 MHz LO Input power 50 Ω matched LB_VCO_IN –7 –5 –3 dBm Input return loss Output return loss ENABLE/DISABLE speed

50 Ω system 10 dB

20 µs

1999 Nov 02

Philips Semiconductors Product specification

SA3600Low voltage dual-band RF front-end

PIN NO

PIN MNEMONIC DC V EQUIVALENT CIRCUIT

1 HB LNA OUT

3 HB LNA IN 0.8

4 V

SR01786

BIAS

SR01787

BIAS

5 HB MXR+ IN 1.2

6 HB MXR– IN 1.2

7 PD1

10 PD2 Apply externally

14 PD3

9 HB VCO OUT Pull-up externally to V

SR01788

SR01789

1999 Nov 02

SR01790

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