Philips PZTM1102 Datasheet
DISCRETE SEMICONDUCTORS
M3D087
DATA SH EET
PZTM1102
PNP transistor/Schottky-diode
module
Product specification
File under Discrete Semiconductors, SC01
1996 May 09
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOT223) and symbol.
Marking code: TM1102.
handbook, halfpage
4
1
1
4
2
3
2 3
MAM237
Top view
PNP transistor/Schottky-diode module PZTM1102
FEATURES
• Low output capacitance
• Fast switching time
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
• Integrated Schottky protection
diode.
APPLICATIONS
• High-speed switching for industrial
applications.
PINNING
PIN DESCRIPTION
1 cathode Schottky
2 base
3 emitter
4 collector, anode Schottky
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PNP transistor
V
V
V
I
CBO
CES
EBO
C
collector-base voltage open emitter − −40 V
collector-emitter voltage VBE= 0 − −40 V
emitter-base voltage open collector − −6 V
collector current (DC) − −200 mA
Schottky barrier diode
V
R
I
F
I
F(AV)
P power dissipation up to T
T
j
continuous reverse voltage − 40 V
forward current (DC) − 1 A
average forward current − 1 A
= 25 °C; note 1 − 0.5 W
amb
junction temperature reverse current applied − 125 °C
forward current applied − 150 °C
Combined device
P
tot
T
amb
T
stg
T
j
Notes
1. An additional copper area of >20 mm
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
total power dissipation up to T
operating ambient temperature −55 +150 °C
storage temperature −55 +150 °C
junction temperature − 150 °C
2
is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
= 25 °C; note 2 − 1.2 W
amb
1996 May 09 2
Philips Semiconductors Product specification
PNP transistor/Schottky-diode module PZTM1102
ELECTRICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CES
collector-emitter
breakdown voltage
V
(BR)EBO
emitter-base breakdown
voltage
I
CES
collector-emitter cut-off
current
I
EBO
V
CEsat
emitter-base cut-off current VEB= −6 V; IC= 0 − 50 nA
collector-emitter saturation
voltage
V
CEsat
collector-emitter saturation
voltage
V
BEsat
base-emitter saturation
voltage
V
BEsat
base-emitter saturation
voltage
C
ob
C
ib
f
T
h
FE
h
FE
output capacitance IE= ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
input capacitance IC= ic= 0; VEB= −0.5 V; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
DC current gain VCE= −1 V; note 1
DC current gain VCE= −1 V; T
SWITCHING TIMES (see Figs 2 and 3)
t
d
t
r
t
s
t
f
delay time VCC= 5 V 3 7 ns
rise time IC= 50 mA 13 23 ns
storage time Vi= 0 to 5 V 200 380 ns
fall time 50 80 ns
open emitter; IC= −10 µA; IE= 0;
T
= −55 to +150 °C; note 1
amb
open base; IC= −1 mA; VBE= 0;
T
= −55 to +150 °C; note 1
amb
open collector; IE= −10 µA; IC= 0;
T
= −55 to +150 °C; note 1
amb
−40 − V
−40 − V
−6 − V
VCE= −20 V; VBE= 0 − 100 nA
VCE= −20 V; VBE= 0; T
VEB= −6 V; IC= 0; T
amb
= −55 to +150 °C − 50 µA
amb
= −55 to +150 °C − 10 µA
note 1
IC= −10 mA; IB= −1 mA − −200 mV
IC= −50 mA; IB= −3.2 mA − −300 mV
T
= −55 to +150 °C; note 1
amb
IC= −10 mA; IB= −1 mA − −250 mV
IC= −50 mA; IB= −3.2 mA − −350 mV
note 1
IC= −10 mA; IB= −1 mA − −850 mV
IC= −50 mA; IB= −5 mA − −950 mV
T
= −55 to +150 °C; note 1
amb
IC= −10 mA; IB= −1 mA − −1.0 V
IC= −50 mA; IB= −5 mA − −1.1 V
IC= −0.1 mA 40 −
IC= −1 mA 70 −
IC= −10 mA 100 300
IC= −100 mA 30 −
= −55 to +150 °C; note 1
amb
IC= −10 mA 60 500
IC= −100 mA 15 −
1996 May 09 3
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