Philips PZTM1101 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D087
PZTM1101
NPN transistor/Schottky-diode
module
Product specification
1996 May 09
Philips Semiconductors Product specification
NPN transistor/Schottky-diode module PZTM1101
FEATURES
• Low output capacitance
• Fast switching time
DESCRIPTION
Combination of an NPN transistor and a Schottky barrier diode in a plastic
SOT223 package. PNP complement: PZTM1102.
• Integrated Schottky protection
diode.
handbook, halfpage
4
1
APPLICATIONS
• High-speed switching for industrial
applications.
PINNING
PIN DESCRIPTION
Top view
1
2
23
MAM236
4
3
1 anode Schottky
2 base
3 emitter
4 collector, cathode Schottky
Marking code: TM1101.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
CBO
V
CES
V
EBO
I
C
collector-base voltage open emitter − 60 V
collector-emitter voltage VBE=0 − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 200 mA
Schottky barrier diode
V
R
I
F
I
F(AV)
T
j
continuous reverse voltage − 40 V
forward current (DC) − 1A
average forward current − 1A
junction temperature reverse current applied − 125 °C
Combined device
P
tot
T
amb
T
stg
T
j
total power dissipation up to T
operating ambient temperature −55 +150 °C
storage temperature −55 +150 °C
junction temperature − 150 °C
forward current applied − 150 °C
=25°C − 1.2 W
amb
1996 May 09 2
Philips Semiconductors Product specification
NPN transistor/Schottky-diode module PZTM1101
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CES
I
EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
C
ob
C
ib
f
T
h
FE
h
FE
collector-base breakdown voltage open emitter; IC=10µA; IE=0;
collector-emitter breakdown voltage open base; IC= 1 mA; VBE=0;
emitter-base breakdown voltage open collector; IE=10µA; IC=0;
collector-emitter cut-off current VCE=20V; VBE=0 − 100 nA
emitter-base cut-off current VEB=6V; IC=0 − 50 nA
collector-emitter saturation voltage note 1
collector-emitter saturation voltage T
base-emitter saturation voltage note 1
base-emitter saturation voltage T
output capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
input capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 8pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 300 − MHz
DC current gain VCE= 1 V; note 1
DC current gain VCE=1V; T
SWITCHING TIMES (see Figs 2 and 3)
t
d
t
r
t
s
t
f
delay time VCC=5V 1 5 ns
rise time IC=50mA 1631ns
storage time Vi= 0 to 5 V 110 310 ns
fall time 70 100 ns
T
= −55 to +150 °C; note 1
amb
T
= −55 to +150 °C; note 1
amb
T
= −55 to +150 °C; note 1
amb
V
=20V; VBE= 0; T
CE
V
=6V; IC= 0; T
EB
I
= 10 mA; IB=1mA − 200 mV
C
I
= 50 mA; IB= 3.2 mA − 300 mV
C
= −55 to +150 °C; note 1
amb
I
= 10 mA; IB=1mA − 250 mV
C
I
= 50 mA; IB= 3.2 mA − 350 mV
C
I
= 10 mA; IB=1mA − 850 mV
C
I
= 50 mA; IB=5mA − 950 mV
C
= −55 to +150 °C; note 1
amb
I
= 10 mA; IB=1mA − 1000 mV
C
= 50 mA; IB=5mA − 1100 mV
I
C
I
= 0.1 mA 40 −
C
= 1 mA 70 −
I
C
I
= 10 mA 100 300
C
I
= 100 mA 30 −
C
I
= 10 mA 60 500
C
I
= 100 mA 15 −
C
amb
= −55 to +150 °C; note 1
amb
= −55 to +150 °C − 50 µA
amb
= −55 to +150 °C − 10 µA
60 − V
40 − V
6 − V
1996 May 09 3
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