Philips PZTA92 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZTA92
PNP high-voltage transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 14
Philips Semiconductors Product specification
PNP high-voltage transistor PZTA92
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Video equipment
• Telephony
• Professional communication equipment.
DESCRIPTION
handbook, halfpage
4
2, 4
1
PNP high-voltage transistor in a SOT223 plastic package.
NPN complement: PZTA42.
123
Top view
MAM288
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−300 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for SOT223 in the General Part of associated
1999 Apr 14 2
2
.
Philips Semiconductors Product specification
PNP high-voltage transistor PZTA92
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 104 K/W
thermal resistance from junction to soldering point 23 K/W
“Thermal considerations for SOT223 in the General Part of associated
.
collector cut-off current IE= 0; VCB= −200 V −−20 nA
emitter cut-off current IC= 0; VBE= −5V −−100 nA
DC current gain IC= −1 mA; VCE= −10 V; note 1 25 −
I
= −10 mA; VCE= −10 V; note 1 40 −
C
I
= −30 mA; VCE= −10 V; note 1 25 −
C
collector-emitter saturation
IC= −20 mA; IB= −2mA −−500 mV
voltage
base-emitter saturation voltage IC= −20 mA; IB= −2mA −−900 mV
collector capacitance IE= 0; VCB= −20 V; f = 1 MHz − 6pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 50 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 14 3
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