Philips PZTA64 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
PZTA64
PNP Darlington transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
Philips Semiconductors Product specification
PNP Darlington transistor PZTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Preamplifiers requiring high input impedance.
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complement: PZTA14.
handbook, halfpage
132
Top view
4
1
MAM320
2, 4
TR1
TR2
3
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CES
C
tot
FE
T
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
collector current (DC) −−500 mA
total power dissipation T
≤ 25 °C − 1.25 W
amb
DC current gain IC= −10 mA; VCE= −5 V 10000 −
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 125 − MHz
1997 Jun 20 2
Philips Semiconductors Product specification
PNP Darlington transistor PZTA64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−800 mA
base current (DC) −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
“Thermal considerations for SOT223 in the General part of handbook SC04”
.
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to soldering point 19 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General part of handbook SC04”
2
.
.
1997 Jun 20 3
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