Philips PZTA56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
PZTA56
PNP general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 01
Philips Semiconductors Product specification
PNP general purpose transistor PZTA56
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
4
2, 4
PNP transistor in a SOT223 plastic package.
NPN complement: PZTA06.
123
Top view
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−80 V
collector-emitter voltage open base −−80 V
peak collector current −−1A
total power dissipation T
≤ 25 °C − 1.2 W
amb
DC current gain IC= −100 mA; VCE= −1 V 100 −
transition frequency IC= −100 mA; VCE= −1 V; f = 100 MHz 50 − MHz
1997 Apr 01 2
Philips Semiconductors Product specification
PNP general purpose transistor PZTA56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
collector-base voltage open emitter −−80 V
collector-emitter voltage open base −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
.
“Thermal considerations for SOT223 in the General part of handbook SC04”
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to ambient note 1 103 K/W
thermal resistance from junction to soldering point 22 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General part of handbook SC04”
2
.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
V
f
T
FE
CEsat
BE
collector cut-off current IE= 0; VCB= −80 V −−50 nA
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −10 mA; VCE= −1 V 100 −
= −100 mA; VCE= −1 V 100 −
I
C
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−250 mV
base-emitter voltage IC= −100 mA; VCE= −1V −−1.2 V
transition frequency IC= −100 mA; VCE= −1 V; f = 100 MHz 50 − MHz
.
1997 Apr 01 3
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