Philips PZTA44, PZTA45 Datasheet
DATA SH EET
Product specification
Supersedes data of 1998 Nov 26
1999 May 21
DISCRETE SEMICONDUCTORS
PZTA44
NPN high-voltage transistor
ook, halfpage
M3D087
1999 May 21 2
Philips Semiconductors Product specification
NPN high-voltage transistor PZTA44
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 400 V).
APPLICATIONS
• Telecommunication.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 500 V
V
CEO
collector-emitter voltage open base − 400 V
V
EBO
emitter-base voltage open collector − 6V
I
C
collector current (DC) − 300 mA
I
CM
peak collector current − 300 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.35 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 May 21 3
Philips Semiconductors Product specification
NPN high-voltage transistor PZTA44
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”
.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 91 K/W
R
th j-s
thermal resistance from junction to soldering point 10 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= 400 V − 100 nA
I
E
= 0; VCB= 400 V; Tj= 150 °C − 10 µA
I
EBO
emitter cut-off current IC= 0; VEB=4V − 100 nA
h
FE
DC current gain VCE=10V
I
C
= 1 mA 40 −
I
C
= 10 mA 50 200
I
C
= 50 mA; note 1 45 −
I
C
= 100 mA; note 1 40 −
V
CEsat
collector-emitter saturation voltage IC= 1 mA; IB= 0.1 mA − 400 mV
I
C
= 10 mA; IB=1mA − 500 mV
I
C
= 50 mA; IB= 5 mA; note 1 − 750 mV
V
BEsat
base-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 − 850 mV
C
c
collector capacitance IE=ie= 0; VCB= 20 V; f = 1 MHz − 7pF
C
e
emitter capacitance IC=ic= 0; VEB= 500 mV;
f = 1 MHz
− 180 pF
f
T
transition frequency IC= 10 mA; VCE=10V;
f = 100 MHz
20 − MHz
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