Philips PZTA42 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
PZTA42
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Jun 16
1999 May 21
Philips Semiconductors Product specification
NPN high-voltage transistor PZTA42
FEATURES
PINNING
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
4
1
123
Top view
MAM287
2, 4
3
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 300 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
2
Handbook”.
.
1999 May 21 2
Philips Semiconductors Product specification
NPN high-voltage transistor PZTA42
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
re
f
T
thermal resistance from junction to ambient note 1 104 K/W
thermal resistance from junction to soldering point 23 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= 200 V − 20 nA
emitter cut-off current IC= 0; VBE=6V − 100 nA
DC current gain VCE=10V
I
= 1 mA 25 −
C
I
=10mA 40 −
C
I
=30mA 40 −
C
collector-emitter saturation
IC= 20 mA; IB=2mA − 500 mV
voltage
base-emitter saturation voltage IC= 20 mA; IB=2mA − 900 mV
feedback capacitance IC=ic= 0; VCB= 20 V; f = 1 MHz − 3pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 50 − MHz
1999 May 21 3
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