Philips PZTA14 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZTA14
NPN Darlington transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 14
Philips Semiconductors Product specification
NPN Darlington transistor PZTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 base/input
2, 4 collector/output
APPLICATIONS
3 emitter/ground
• Pre-amplifiers requiring high input impedance.
DESCRIPTION
handbook, halfpage
4
1
2, 4
NPN Darlington transistor in a SOT223 plastic package.
MAM319
TR1
TR2
3
PNP complement: PZTA64.
132
Top view
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
B
tot
stg
j
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 800 mA
base current (DC) − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for SOT223 in the General Part of associated
1999 Apr 14 2
2
.
Philips Semiconductors Product specification
NPN Darlington transistor PZTA14
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to soldering point 19 K/W
“Thermal considerations for SOT223 in the General Part of associated
.
collector cut-off current IE= 0; VCB=30V − 100 nA
collector cut-off current VBE= 0; VCE=30V − 100 nA
emitter cut-off current IC= 0; VEB=10V − 100 nA
DC current gain VCE= 5 V; (see Fig.2)
I
= 10 mA 10000 −
C
I
= 100 mA 20000 −
C
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter on-state voltage IC= 100 mA; VCE=5V − 2V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 125 − MHz
1999 Apr 14 3
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