Philips PZT4403 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT4403
PNP switching transistor
Product specification
1999 May 10
Philips Semiconductors Product specification
PNP switching transistor PZT4403
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT223
plastic package. NPN complement:
PZT4401.
123
Top view
Marking code: ZT4403
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
4
2, 4
1
3
MAM288
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
2
Handbook”.
.
1999 May 10 2
Philips Semiconductors Product specification
PNP switching transistor PZT4403
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point 25 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −40 V −−50 nA
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −1 V; see Fig.2
I
= −0.1 mA 30 −
C
I
= −1mA 60 −
C
I
=−10 mA 100 −
C
I
= −150 mA; note 1 100 300
C
V
= −2 V; IC= −500 mA; note 1 20 −
CE
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA; note 1 −−400 mV
= −500 mA; IB= −50 mA; note 1 −−750 mV
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−950 mV
I
= −500 mA; IB= −50 mA; note 1 −−1300 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 8.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 35 pF
transition frequency IC= −20 mA; VCE= −10 V;
200 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 15 ns
rise time − 30 ns
turn-off time − 350 ns
storage time − 300 ns
fall time − 50 ns
= −150 mA; I
Con
I
= −15 mA; VBB= 3.5 V;
Boff
VCC= −29.5 V
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 10 3
Bon
= 15 mA;
− 40 ns
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