Philips PZT4401 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT4401
NPN switching transistor
Product specification
1999 May 10
Philips Semiconductors Product specification
NPN switching transistor PZT4401
FEATURES
• High current (max. 600 mA)
• Low voltage.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Switching and linear amplification
in industrial and consumer
applications.
handbook, halfpage
DESCRIPTION
NPN switching transistor in a SOT223
plastic package. PNP complement:
PZT4403.
Marking code: ZT4401
123
Top view
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
4
2, 4
1
3
MAM287
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
2
Handbook”.
.
1999 May 10 2
Philips Semiconductors Product specification
NPN switching transistor PZT4401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 109 K/W
thermal resistance from junction to soldering point 28 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB=60V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; see Fig.2
I
= 0.1 mA 20 −
C
I
= 1 mA 40 −
C
I
=10mA 80 −
C
I
= 150 mA; note 1 100 300
C
V
=2V; IC= 500 mA; note 1 40 −
CE
collector-emitter saturation
voltage
IC= 150 mA; IB= 15 mA; note 1 − 400 mV
= 500 mA; IB= 50 mA; note 1 − 750 mV
I
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 950 mV
I
= 500 mA; IB= 50 mA; note 1 − 1200 mV
C
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 30 pF
transition frequency IC= 20 mA; VCE= 10 V; f = 100 MHz 250 − MHz
turn-on time I
delay time − 15 ns
rise time − 20 ns
= 150 mA; I
Con
I
= −15 mA; VBB= −3.5 V;
Boff
Bon
VCC= 29.5 V
= 15 mA;
− 35 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 10 3
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