Philips PZT3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 14
Philips Semiconductors Product specification
PNP switching transistor PZT3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• High-speed switching.
DESCRIPTION
handbook, halfpage
4
2, 4
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT3904.
123
Top view
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.05 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14 2
2
.
Philips Semiconductors Product specification
PNP switching transistor PZT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 115 K/W
thermal resistance from junction to soldering point 34 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −30 V −−50 nA
emitter cut-off current IC= 0; VEB= −6V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
I
= −0.1 mA 60 −
C
I
= −1mA 80 −
C
I
=−10 mA 100 300
C
I
= −50 mA 60 −
C
I
= −100 mA 30 −
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−200 mV
= −50 mA; IB= −5mA −−200 mV
I
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −650 −850 mV
I
= −50 mA; IB= −5mA −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
= −10 mA; I
Con
I
=1mA
Boff
rise time − 35 ns
turn-off time − 300 ns
storage time − 225 ns
fall time − 75 ns
1999 Apr 14 3
Bon
= −1 mA;
− 65 ns
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