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DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 14
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Philips Semiconductors Product specification
PNP switching transistor PZT3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• High-speed switching.
DESCRIPTION
handbook, halfpage
4
2, 4
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT3904.
123
Top view
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.05 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14 2
2
.
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Philips Semiconductors Product specification
PNP switching transistor PZT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 115 K/W
thermal resistance from junction to soldering point 34 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −30 V −−50 nA
emitter cut-off current IC= 0; VEB= −6V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
I
= −0.1 mA 60 −
C
I
= −1mA 80 −
C
I
=−10 mA 100 300
C
I
= −50 mA 60 −
C
I
= −100 mA 30 −
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−200 mV
= −50 mA; IB= −5mA −−200 mV
I
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −650 −850 mV
I
= −50 mA; IB= −5mA −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
= −10 mA; I
Con
I
=1mA
Boff
rise time − 35 ns
turn-off time − 300 ns
storage time − 225 ns
fall time − 75 ns
1999 Apr 14 3
Bon
= −1 mA;
− 65 ns