Philips PZT3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT3904
NPN switching transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 14
Philips Semiconductors Product specification
NPN switching transistor PZT3904
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• High-speed saturated switching.
DESCRIPTION
handbook, halfpage
4
2, 4
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT3906.
123
Top view
1
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.05 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14 2
2
.
Philips Semiconductors Product specification
NPN switching transistor PZT3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 117 K/W
thermal resistance from junction to soldering point 36 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; (see Fig.2)
I
= 0.1 mA 60 −
C
I
= 1 mA 80 −
C
I
= 10 mA 100 300
C
I
=50mA 60 −
C
I
= 100 mA 30 −
C
saturation voltage IC= 10 mA; IB=1mA − 200 mV
= 50 mA; IB=5mA − 200 mV
I
C
saturation voltage IC= 10 mA; IB=1mA − 850 mV
I
= 50 mA; IB=5mA − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 8pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 300 − MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
= 10 mA; I
Con
Bon
delay time − 35 ns
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
1999 Apr 14 3
= 1 mA; I
= −1mA − 65 ns
Boff
Loading...