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DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 14
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Philips Semiconductors Product specification
PNP switching transistor PZT2907A
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 60 V).
2, 4 collector
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
3 emitter
123
Top view
4
2, 4
1
3
MAM288
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 1.15 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 14 2
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Philips Semiconductors Product specification
PNP switching transistor PZT2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point 25 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −50 V −−10 nA
= 0; VCB= −50 V; T
I
E
= 150 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V 75 −
I
= −1 mA; VCE= −10 V 100 −
C
I
= −10 mA; VCE= −10 V 100 −
C
I
= −150 mA; VCE= −10 V; note 1 100 300
C
I
= −500 mA; VCE= −10 V; note 1 50 −
C
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−400 mV
= −500 mA; IB= −50 mA; note 1 −−1.6 V
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1.3 V
I
= −500 mA; IB= −50 mA; note 1 −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V;
200 − MHz
f = 100 MHz; note 1
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 12 ns
rise time − 30 ns
turn-off time − 365 ns
storage time − 300 ns
fall time − 65 ns
= −150 mA; I
Con
I
=15mA
Boff
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 14 3
= −15 mA;
Bon
− 40 ns