Philips PZT2907A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
PZT2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 14
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 60 V).
2, 4 collector
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
3 emitter
123
Top view
4
2, 4
1
3
MAM288
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 1.15 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 14 2
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point 25 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −50 V −−10 nA
= 0; VCB= −50 V; T
I
E
= 150 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V 75 −
I
= −1 mA; VCE= −10 V 100 −
C
I
= −10 mA; VCE= −10 V 100 −
C
I
= −150 mA; VCE= −10 V; note 1 100 300
C
I
= −500 mA; VCE= −10 V; note 1 50 −
C
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−400 mV
= −500 mA; IB= −50 mA; note 1 −−1.6 V
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −−1.3 V
I
= −500 mA; IB= −50 mA; note 1 −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V;
200 − MHz
f = 100 MHz; note 1
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 12 ns
rise time − 30 ns
turn-off time − 365 ns
storage time − 300 ns
fall time − 65 ns
= −150 mA; I
Con
I
=15mA
Boff
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 14 3
= −15 mA;
Bon
− 40 ns
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