Philips PZM10NB2A, PZM3.0NB2A, PZM45.1B2A, PZM45.6B2A, PZM3.9NB2A Datasheet

DATA SH EET

Product specification
Supersedes data of 1999 Jun 02

1999 Jun 11

DISCRETE SEMICONDUCTORS

PZM-NA series

Voltage regulator double diodes

ook, halfpage

M3D114

1999 Jun 11 2

Philips Semiconductors Product specification

Voltage regulator double diodes PZM-NA series

FEATURES

• Total power dissipation: max. 220 mW per diode

• Small plastic package suitable for surface mounted

design

• Working voltage: nom. 2.4 V and 15 V (E24 range).

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low power general purpose voltage regulator double
diodes in a SOT346 (SC59) plastic package, suitable for
surface mounted design.

PINNING

PIN DESCRIPTION

1 cathode
2 cathode
3 anode

Fig.1 Simplified outline (SOT346; SC59) and

symbol.

handbook, halfpage

Top view

21

3

MAM407

21

3

MARKING

TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE

PZM2.4NBA 2A4 PZM6.2NB2A 6A2
PZM2.7NB2A 2A7 PZM6.8NB2A 6A8
PZM3.0NB2A 3A0 PZM7.5NB2A 7A5
PZM3.3NB2A 3A3 PZM8.2NB2A 8A2
PZM3.6NB2A 3A6 PZM9.1NB2A 9A1
PZM3.9NB2A 3A9 PZM10NB2A 10A
PZM4.3NB2A 4A3 PZM11NB2A 11A
PZM4.7NB2A 4A7 PZM12NB2A 12A
PZM5.1NB2A 5A1 PZM13NB2A 13A
PZM5.6NB2A 5A6 PZM15NB2A 15A

1999 Jun 11 3

Philips Semiconductors Product specification

Voltage regulator double diodes PZM-NA series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.

THERMAL CHARACTERISTICS

Notes

1. Solderpoint of cathode tab.

2. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

F

continuous forward current − 200 mA

I

ZSM

non-repetitive peak current tp= 100 µs; square wave see Table 1

P power dissipation; see note 1 T

amb

=25°C − 220 mW

T

stg

storage temperature −65 +150 °C

T

j

operating junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point one diode loaded; note 1 350 K/W

R

th j-a

thermal resistance from junction to ambient one diode loaded; note 2 560 K/W

1999 Jun 11 4

Philips Semiconductors Product specification

Voltage regulator double diodes PZM-NA series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF= 10 mA; see Fig.2 0.9 V

I

F

= 100 mA; see Fig.2 1.1 V

I

R

reverse current

PZM2.4NBA V

R

=1V 50 µA

PZM2.7NB2A V

R

=1V 20 µA

PZM3.0NB2A V

R

=1V 10 µA

PZM3.3NB2A V

R

=1V 5 µA

PZM3.6NB2A V

R

=1V 5 µA

PZM3.9NB2A V

R

=1V 3 µA

PZM4.3NB2A V

R

=1V 3 µA

PZM4.7NB2A V

R

=1V 3 µA

PZM5.1NB2A V

R

= 1.5 V 3 µA

PZM5.6NB2A V

R

= 2.5 V 2 µA

PZM6.2NB2A V

R

= 3.0 V 2 µA

PZM6.8NB2A V

R

= 3.5 V 2 µA

PZM7.5NB2A V

R

= 4.0 V 1 µA

PZM8.2NB2A V

R

= 5.0 V 700 nA

PZM9.1NB2A V

R

= 6.0 V 500 nA

PZM10NB2A V

R

= 7.0 V 200 nA

PZM11NB2A V

R

= 8.0 V 100 nA

PZM12NB2A V

R

= 9.0 V 100 nA

PZM13NB2A V

R

= 10.0 V 100 nA

PZM15NB2A V

R

= 11.0 V 70 nA