Philips PZM10NB, PZM11NB3, PZM12NB, PZM15NB, PZM15NB1 Datasheet

DATA SH EET

Product specification
Supersedes data of 1997 Dec 15

1999 Jan 28

DISCRETE SEMICONDUCTORS

PZM-N series

Voltage regulator diodes

ook, halfpage

M3D114

1999 Jan 28 2

Philips Semiconductors Product specification

Voltage regulator diodes PZM-N series

FEATURES

• Total power dissipation:
max. 300 mW

• Small plastic package suitable for
surface mounted design

• Wide working voltage range:
nom. 2.4 to 75 V (E24 range).

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low power general purpose voltage
regulator diode in a SOT346 (SC59)
plastic package, suitable for surface
mounted design.

PINNING

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

Fig.1 Simplified outline (SOT346; SC59) and symbol.

handbook, halfpage

MAM378

Top view

21

3

2

n.c.

1

3

MARKING

TYPE

NUMBER

MARKING CODE

TYPE

NUMBER

MARKING CODE

B B1 B2 B3 B B1 B2 B3

PZM2.4N 2V4 −−−PZM15N 15V 151 152 153
PZM2.7N 2V7 271 272 − PZM16N 16V 161 162 163
PZM3.0N 3V0 301 302 − PZM18N 18V 181 182 183
PZM3.3N 3V3 331 332 − PZM20N 20V 201 202 203
PZM3.6N 3V6 361 362 − PZM22N 22V 221 222 223
PZM3.9N 3V9 391 392 − PZM24N 24V 241 242 243
PZM4.3N 4V3 431 432 433 PZM27N 27V −−−
PZM4.7N 4V7 471 472 473 PZM30N 30V −−−
PZM5.1N 5V1 511 512 513 PZM33N 33V −−−
PZM5.6N 5V6 561 562 563 PZM36N 36V −−−
PZM6.2N 6V2 621 622 623 PZM39N 39V −−−
PZM6.8N 6V8 681 682 683 PZM43N 43V −−−
PZM7.5N 7V5 751 752 753 PZM47N 47V −−−
PZM8.2N 8V2 821 822 823 PZM51N 51V −−−
PZM9.1N 9V1 911 912 913 PZM56N 56V −−−

PZM10N 10V 101 102 103 PZM62N 62V −−−
PZM11N 11V 111 112 113 PZM68N 68V −−−
PZM12N 12V 121 122 123 PZM75N 75V −−−
PZM13N 13V 131 132 133 − −−−−

1999 Jan 28 3

Philips Semiconductors Product specification

Voltage regulator diodes PZM-N series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

continuous forward current − 250 mA

I

ZSM

non-repetitive peak current tp= 100 µs; square wave;

T

amb

=25°C prior to surge

see Tables 1 and 2

P

tot

total power dissipation T

amb

=25°C − 300 mW

T

stg

storage temperature −65 +150 °C

T

j

operating junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts=60°C 300 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF= 10 mA; see Fig.2 0.9 V

I

F

= 100 mA; see Fig.2 1.1 V

I

R

reverse current
PZM2.4N V

R

=1V 50 µA

PZM2.7N V

R

=1V 20 µA

PZM3.0N V

R

=1V 10 µA

PZM3.3N V

R

=1V 5 µA

PZM3.6N V

R

=1V 5 µA

PZM3.9N V

R

=1V 3 µA

PZM4.3N V

R

=1V 3 µA

PZM4.7N V

R

=1V 3 µA

PZM5.1N V

R

= 1.5 V 3 µA

PZM5.6N V

R

= 2.5 V 2 µA

PZM6.2N V

R

= 3.0 V 2 µA

PZM6.8N V

R

= 3.5 V 2 µA

PZM7.5N V

R

= 4.0 V 1 µA

PZM8.2N V

R

= 5.0 V 700 nA

PZM9.1N V

R

= 6.0 V 500 nA

PZM10N V

R

= 7.0 V 200 nA

PZM11N V

R

= 8.0 V 100 nA

PZM12N V

R

= 9.0 V 100 nA

PZM13N V

R

= 10.0 V 100 nA

PZM15N V

R

= 11.0 V 70 nA

PZM16N V

R

= 12.0 V 70 nA

1999 Jan 28 4

Philips Semiconductors Product specification

Voltage regulator diodes PZM-N series

I

R

reverse current
PZM18N V

R

= 13.0 V 70 nA

PZM20N V

R

= 15.0 V 70 nA

PZM22N V

R

= 17.0 V 70 nA

PZM24N V

R

= 19.0 V 70 nA

PZM27N V

R

= 21.0 V 70 nA

PZM30N V

R

= 23.0 V 70 nA

PZM33N V

R

= 25.0 V 70 nA

PZM36N V

R

= 27.0 V 70 nA

PZM39N V

R

= 0.7 V

Znom

50 nA

PZM43N V

R

= 0.7 V

Znom

50 nA

PZM47N V

R

= 0.7 V

Znom

50 nA

PZM51N V

R

= 0.7 V

Znom

50 nA

PZM56N V

R

= 0.7 V

Znom

50 nA

PZM62N V

R

= 0.7 V

Znom

50 nA

PZM68N V

R

= 0.7 V

Znom

50 nA

PZM75N V

R

= 0.7 V

Znom

50 nA

SYMBOL PARAMETER CONDITIONS MAX. UNIT