Philips PZB16035U Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PZB16035U
NPN microwave power transistor
Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor PZB16035U
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
• Input matching cell improves input impedance and
allows an easier design of wideband circuits.
APPLICATIONS
• Common base class-B power amplifiers under CW
conditions in military and professional applications up to
1.6 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, halfpage
1
2
Top view
Fig.1 Simplified outline and symbol.
c
b
3
e
MAM314
QUICK REFERENCE DATA
RF performance up to T
MODE OF OPERATION
=25°C in a common base class-B selective amplifier.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
G
(dB)
p
η
C
(%)
Zi; Z
(Ω)
L
Class-B (CW) 1.55 28 ≥35 ≥8 ≥45 see Figs 5
and 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor PZB16035U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−35 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
total power dissipation Tmb=75°C − 45 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature Up to 0.2 mm from the flange;
− 235 °C
t < 10 s
60
handbook, halfpage
P
tot
(W)
40
20
0
0
MGD968
50 100 200150
Tmb (°C)
Fig.2 Power derating curve.
1997 Feb 18 3
Philips Semiconductors Product specification
NPN microwave power transistor PZB16035U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
I
CBO
I
CES
I
EBO
C
cb
thermal resistance from junction to mounting-base Tj=75°C 2.2 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W
“Mounting recommendations in the General part of handbook SC15”
.
collector cut-off current VCB=40V; IE=0 − 10 mA
V
=30V; IE=0 − 5mA
CB
collector cut-off current V
=35V; RBE=0 − 50 mA
CER
emitter cut-off current VEB= 1.5 V; IC=0 − 200 µA
collector-base capacitance VCB=28V; IE=IC=0 17 − pF
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
f
(GHz)
=25°C in a common base class B selective amplifier; note 1.
mb
V
(V)
CC
P
(W)
L
G
p
(dB)
η
(%)
C
Zi; Z
(Ω)
L
Class B (CW) 1.55 28 >35; typ. 38 >8; typ. 9.8 >45; typ. 50 see Figs 5 and 6
Note
1. Amplifier consists of pre-matching test-circuit with complementary input and output slug tuners.
handbook, full pagewidth
input
50 Ω
0.65
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.65 mm.
Permittivity: εr= 10.
49 6
614 14
0.65
6
395.56.5
100 pF
(ATC)
6
output
50 Ω
MGK062
Fig.3 Prematching test circuit boards for CW, class B operation at 1.55 GHz.
1997 Feb 18 4
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