Philips PZ1418B30U, PZ1721B25U, PZ2024B20U Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PZ1418B30U; PZ1721B25U;
PZ2024B20U

NPN microwave power transistors

Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15

1997 Feb 19

Philips Semiconductors Product specification

NPN microwave power transistors

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Internal input and output prematching ensures good
stability and easy broadband use.

APPLICATIONS

• Common base class-B broadband amplifiers under CW
conditions in military and professional applications.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.

PZ1418B30U; PZ1721B25U;

PINNING - SOT443A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, halfpage

1

2

Top view

Fig.1 Simplified outline and symbol.

PZ2024B20U

c

b

3

e

MAM314

QUICK REFERENCE DATA

RF performance up to T

TYPE NUMBER

=25°C in a common base class-B wideband amplifier.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

(dB)

G

p

η

(%)

C

Zi; Z

L

(Ω)

PZ1418B30U 1.4 to 1.8 28 ≥27 ≥7.3 ≥38 see Figs 6 and 7
PZ1721B25U 1.7 to 2.1 28 ≥25 ≥7 ≥35 see Figs 11 and 12
PZ2024B20U 2 to 2.4 28 ≥20 ≥6 ≥35 see Figs 16 and 17

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistors

PZ1418B30U; PZ1721B25U;

PZ2024B20U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

50

handbook,

P

tot

(W)

40

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−35 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
total power dissipation Tmb≤ 75 °C − 45 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature − 235 °C

MGD970

30

20

10

0

0 50 100 200

150

Tmb (°C)

Fig.2 Power derating curve as a function of

mounting base temperature.

1997 Feb 19 3

Philips Semiconductors Product specification

NPN microwave power transistors

PZ1418B30U; PZ1721B25U;

PZ2024B20U

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See “

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

APPLICATION INFORMATION

thermal resistance from junction to mounting-base Tj=75°C 2.2 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W

Mounting recommendations in the General part of handbook SC15”

.

collector cut-off current VCB=40V; IE= 0 10 mA

V

=30V; IE=0 5 mA

CB

collector cut-off current VCE=35V; RBE= 0 50 mA
emitter cut-off current VEB= 1.5 V; IC= 0 200 µA

PZ1418B30U

Microwave performance up to T

TYPE

NUMBER

f

(GHz)

=25°C in a common base class B wideband amplifier.

mb

V

CC

(V)

(W)

PZ1418B30U 1.4 to 1.8 28 ≥27

typ. 35

handbook, full pagewidth

input
50 Ω

0.65

Dimensions in mm.
Substrate: Epsilam printed-circuitboard.
Thickness: 0.635 mm.
Permittivity: εr= 10.

4 5 5 2 5.5 22

12

6.5

P

L

21

4

G

p

(dB)

≥7.3

typ. 8.4

8.5

typ. 45

0.65

η

C

(%)

≥38

100 pF

(ATC)

see Figs 6 and 7

output

50 Ω

MGK064

Zi; Z

(Ω)

L

Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U).

1997 Feb 19 4

Philips Semiconductors Product specification

NPN microwave power transistors

40

handbook, halfpage

P

L

(W)

20

0

0

Class-B operation; VCC= 28 V; Tmb=25°C.
(1) 1.4 GHz.
(2) 1.6 GHz.
(3) 1.8 GHz.

246

Fig.4 Load power as a function of input power;

typical values for PZ1418B30U.

MGD984

(1)
(2)

(3)

Pi (W)

PZ1418B30U; PZ1721B25U;

PZ2024B20U

40

handbook, halfpage

P

L

(W)

30

1.4 1.5 1.9

Class-B operation; VCC= 28 V; Tmb=25°C; Pi=5W.

Fig.5 Load power, efficiency and VSWR as

functions of frequency; typical value
for PZ1418B30U.

P

L

η

C

VSWR

1.6 1.7 1.8

MGL066

f (GHz)

η

C

(%)
50

40

VSWR
2

1

1997 Feb 19 5