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DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
PXTA92
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 29
2004 Dec 09
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NXP Semiconductors Product data sheet
9
1
2
3
PNP high-voltage transistor PXTA92
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
PNP high-voltage transistor in a SOT89 plastic package.
complement: PXTA42.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
PXTA92 *1N
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PXTA92 SC-62 plastic surface mounted package; collector pad for good heat
SOT89
transfer; 3 leads
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −300 V
collector-emitter voltage open base − −300 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09 2
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NXP Semiconductors Product data sheet
PNP high-voltage transistor PXTA92
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2.
For
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base cut-off curren t IE = 0 A; VCB = −200 V − −250 nA
emitter-base cut-off current IC = 0 A; VBE = −3 V − −100 nA
DC current gain VCE = −10 V; note 1
IC = −1 mA 25 −
IC = −10 mA 40 −
IC = −30 mA 25 −
collector-emitter saturation voltage IC = −20 mA; IB = −2 mA − −500 mV
base-emitter saturation vo ltage IC = −20 mA; IB = −2 mA −900 mV
collector capacitance IE = ie = 0 A; VCB = −20 V;
= 1 MHz
f
transition frequency IC = −10 mA; VCE = −20 V;
f
= 100 MHz
− 6 pF
50 − MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Dec 09 3
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NXP Semiconductors Product data sheet
9
PNP high-voltage transistor PXTA92
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
E
e
e
1
1.5
2004 Dec 09 4
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NXP Semiconductors Product data sheet
PNP high-voltage transistor PXTA92
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the produc t specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Dec 09 5
60134) may cause permanent damage to
Page 6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property right s.
Printed in The Netherlands R75/04/pp6 Date of release: 2004 Dec 09 Document order number: 9397 750 13903
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