Philips pxta14 Datasheet

Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
PXTA14
NPN Darlington transistor
Product data sheet Supersedes data of 1999 Apr 14
2004 Dec 09
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NXP Semiconductors Product data sheet
7
NPN Darlington transistor PXTA14

FEATURES

• High current (max. 500 mA)
• Low voltage (max. 30 V).

APPLICATIONS

• High input impedance preamplifiers.

DESCRIPTION

NPN Darlington transistor in a SOT89 plastic pack age.
complement: PXTA64.
PNP

MARKING

T YPE NUMBER MARKING CODE
(1)
PXTA14 *1N
Note
1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.

PINNING

PIN DESCRIPTION
1 emitter 2 collector 3 base
321
Fig.1 Simplified outline (SOT89) and symbol.
23
TR1
TR2
1
sym08

ORDERING INFORMATION

PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PXTA14 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 09 2
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NXP Semiconductors Product data sheet
NPN Darlington transistor PXTA14

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for th e SOT89 in the General Part of associated
Handbook”.
collector-base voltage open emitter − 30 V collector-emitter voltage VBE = 0 V − 30 V emitter-base voltage open collector − 10 V collector current (DC) − 500 mA peak collector current − 1 A base current (DC) − 200 mA total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C junction temperature − 150 °C ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-a) th(j-s)
thermal resistance from junction to ambient note 1 96 K/W thermal resistance from junction to solder point 16 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for th e SOT89 in the General Part of associated
Handbook”.

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CES
I
EBO
h
FE
collector-base cut-off curren t IE = 0 A; VCB = 30 V − 100 nA collector-emitter cut-off current VBE = 0 V; VCE = 30 V − 100 nA emitter cut-off current IC = 0 A; VEB = 10 V − 100 nA DC current gain IC = 10 mA; VCE = 5 V; (see Fig.2) 10 000 −
IC = 100 mA; VCE = 5 V; (see Fig.2) 20 000 − V V V f
T
CEsat BEsat BEon
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − 1.5 V base-emitter saturation vo ltage IC = 100 mA; IB = 0.1 mA − 1.5 V base-emitter on-state voltage IC = 100 mA; VCE = 5 V − 2 V transition frequency IC = 30 mA; VCE = 5 V; f = 100 MHz 125 − MHz
2004 Dec 09 3
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NXP Semiconductors Product data sheet
NPN Darlington transistor PXTA14
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
−1
10
VCE = 2 V.
1
10 10
Fig.2 DC current gain; typical values.
MGD837
2
IC (mA)
3
10
2004 Dec 09 4
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NXP Semiconductors Product data sheet
9
NPN Darlington transistor PXTA14

PACKAGE OUTLINE

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03 06-03-16
E
e
e
1
1.5
2004 Dec 09 5
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NXP Semiconductors Product data sheet
NPN Darlington transistor PXTA14

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
(1)
PRODUCT STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions
2004 Dec 09 6
60134) may cause permanent damage to
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be change d without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property right s.
Printed in The Netherlands R75/04/pp7 Date of release: 2004 Dec 09 Document order number: 9397 750 13901
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