Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
PXT4403
PNP switching transistor
Product data sheet
Supersedes data of 1999 Apr 14
2004 Nov 22
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NXP Semiconductors Product data sheet
9
1
2
3
PNP switching transistor PXT4403
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT89 plastic package.
complement: PXT4401.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
PXT4403 *2T
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym07
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PXT4403 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Nov 22 2
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NXP Semiconductors Product data sheet
PNP switching transistor PXT4403
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −40 V
collector-emitter voltage open base − −40 V
emitter-base voltage open collector − −5 V
collector current (DC) − −600 mA
peak collector current − −800 mA
peak base current − −200 mA
total power dissipation T
amb
≤ 25 °C
note 1 − 0.5 W
note 2 − 0.8 W
note 3 − 1.1 W
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 6 cm2.
1600
P
tot
(mW)
1200
800
400
0
(1)
(2)
(3)
−75 17512525 75−25
006aaa238
T
(°C)
amb
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm
(3) FR4 PCB; standard footprint.
2
mounting pad for collector.
Fig.2 Power derating curves.
2004 Nov 22 3
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NXP Semiconductors Product data sheet
PNP switching transistor PXT4403
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Notes
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 6 cm2.
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
in free air
note 1 250 K/W
note 2 156 K/W
note 3 113 K/W
30 K/W
3
10
Z
th
(1)
(K/W)
(2)
(3)
2
10
10
Mounted on FR4 printed-circu i t board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
−5
10
−4
10
(3) δ = 0.5.
(4) δ = 0.33.
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
−2
−1
10
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ = 0.01.
(10)δ = 0.
006aaa235
1010
2
10
tp (s)
3
10
2004 Nov 22 4
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NXP Semiconductors Product data sheet
006aaa237
PNP switching transistor PXT4403
3
10
Z
th
(K/W)
(1)
2
(2)
10
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−5
10
−4
10
−3
10
−2
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa236
−1
10
1
1010
2
10
tp (s)
3
10
(9) δ = 0.01.
(10)δ = 0.
3
10
Z
th
(K/W)
(1)
2
10
10
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
−5
10
−4
10
−3
10
−2
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
−1
10
2
.
1
1010
2
10
tp (s)
3
10
(9) δ = 0.01.
(10)δ = 0.
2004 Nov 22 5
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NXP Semiconductors Product data sheet
PNP switching transistor PXT4403
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.7)
t
on
t
d
t
r
t
off
t
s
t
f
collector-base cut-off curren t IE = 0 A; VCB = −40 V − −50 nA
emitter-base cut-off current IC = 0 A; VEB = −5 V − −50 nA
DC current gain IC = −0.1 mA; VCE = −1 V 30 −
IC = −1 mA; VCE = −1 V 60 −
IC = −10 mA; VCE = −1 V 100 −
IC = −150 mA; VCE = −2 V 100 300
IC = −500 mA; VCE = −2 V 20 −
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA − −400 mV
IC = −500 mA; IB = −50 mA − −750 mV
base-emitter saturation vo ltage IC = −150 mA; IB = −15 mA − −950 mV
IC = −500 mA; IB = −50 mA − −1.3 V
collector capacitance IE = ie = 0 A; VCB = −10 V; f = 1 MHz − 8.5 pF
emitter capacitance IC = ic = 0 A; VEB = −500 mV; f = 1 MHz − 35 pF
transition frequency IC = −20 mA; VCE = −10 V; f = 100 MHz 200 − MHz
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
= 15 mA
Boff
= −15 mA;
Bon
− 40 ns
rise time − 30 ns
turn-off time − 350 ns
storage time − 300 ns
fall time − 50 ns
2004 Nov 22 6
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NXP Semiconductors Product data sheet
V
V
PNP switching transistor PXT4403
300
book, full pagewidth
h
FE
200
100
0
−1
−10
−1 −10 −10
Fig.6 DC current gain; typical values.
VCE = −1 V
2
IC mA
MGD812
−10
3
handbook, full pagewidth
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; R
V
= 3.5 V; VCC = −29.5 V.
BB
Oscilloscope input impedance Zi = 50 Ω.
= 325 Ω; RC = 160 Ω.
B
oscilloscope
V
i
(probe)
450 Ω
R1
R2
BB
R
B
CC
R
C
V
(probe)
o
DUT
MGD624
450 Ω
oscilloscope
Fig.7 Test circuit for switching times.
2004 Nov 22 7
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NXP Semiconductors Product data sheet
9
PNP switching transistor PXT4403
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
E
e
e
1
1.5
2004 Nov 22 8
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NXP Semiconductors Product data sheet
PNP switching transistor PXT4403
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Nov 22 9
60134) may cause permanent damage to
Page 10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/04/pp10 Date of release: 2004 Nov 22 Document order number: 9397 750 13899
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