Philips PUMH9 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

PUMH9

NPN resistor-equipped double
transistor

Product specification

1999 May 06

Philips Semiconductors Product specification

NPN resistor-equipped double transistor PUMH9

FEATURES

• Transistors with built-in bias resistors (R1 typ. 10 kΩ
and R2 typ. 47 kΩ)

• No mutual interference between the transistors

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and
driver circuits

• Inverter circuit configurations without use of external
resistors.

handbook, halfpage

132

Top view

56

4

MAM342

654

R1 R2

TR1

R2

123

TR2

R1

DESCRIPTION

NPN resistor-equipped double transistor in an SC-88
(SOT363) plastic package.

MARKING

TYPE NUMBER MARKING CODE

PUMH9 Ht9

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

Fig.1 Simplified outline (SC-88) and symbol.

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

1999 May 06 2

Philips Semiconductors Product specification

NPN resistor-equipped double transistor PUMH9

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +40 V

negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 06 3