Philips PUMH4 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
MBD128
PUMH4
NPN resistor-equipped double
transistor
Product specification
Supersedes data of 1998 Aug 10
1999 May 20
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH4
FEATURES
• Transistors with built-in bias resistor R1
(typ. 10 kΩ)
• No mutual interference between the transistors
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
andbook, halfpage
132
Top view
56
4
MAM380
654
R1
TR1
123
TR2
R1
DESCRIPTION
NPN resistor-equipped double transistor in an SC-88
(SOT363) plastic package.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
MARKING
TYPE NUMBER MARKING CODE
PUMH4 Ht4
Fig.1 Simplified outline (SC-88) and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
1999 May 20 2
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C − 300 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
= 0; VCE=30V; Tj= 150 °C −−50 µA
I
B
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 1 mA; VCE= 5 V 200 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz −−2.5 pF
1999 May 20 3
Loading...