Philips PUMH1 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
MBD128
PUMH1
NPN resistor-equipped double transistor
Product specification Supersedes data of 1998 Aug 06
1999 May 20
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH1
FEATURES
Transistors with built-in bias resistors R1 and R2 (typ. 22 k each)
No mutual interference between the transistors
Simplification of circuit design
Reduces number of components and board space.
APPLICATIONS
Especially suitable for space reduction in interface and driver circuits
Inverter circuit configurations without use of external resistors.
ndbook, halfpage
132
Top view
56
4
MAM342
654
R1 R2
TR1
R2
123
TR2
R1
DESCRIPTION
NPN resistor-equipped double transistor in an SC-88 (SOT363) plastic package.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2
MARKING
TYPE NUMBER MARKING CODE
PUMH1 Ht2
Fig.1 Simplified outline (SC-88) and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
1999 May 20 2
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter 50 V collector-emitter voltage open base 50 V emitter-base voltage open collector 10 V input voltage
positive +40 V
negative −−10 V output current (DC) 100 mA peak collector current 100 mA total power dissipation T
25 °C; note 1 200 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
total power dissipation T
25 °C 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 20 3
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