Philips PUMF12 operating Manual

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DATA SH EET
MBD128
PUMF12
PNP general purpose transistor; NPN resistor-equipped transistor
Product specification 2002 Nov 07
Philips Semiconductors Product specification
PNP general purpose transistor; NPN resistor-equipped transistor
FEATURES
General purpose transistor and resistor equipped transistor in one package
100 mA collector current
50 V collector-emitter voltage
300 mW total power dissipation
SOT363 package; replaces two SOT323 (SC-70)
packaged devices on same PCB area
Reduced pick and place costs.
APPLICATIONS
Power management switch for portable equipment, e.g. cellular phone and CD player
Switch for regulator.
DESCRIPTION
PNP general purpose transistor and an NPN resistor-equipped transistor in a SOT363 (SC-88) plastic package.
PUMF12
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
TR1 (PNP)
V
CEO
I
C
I
CM
TR2 (NPN)
V
CEO
I
O
R1 bias resistor 22 k R2 bias resistor 47 k
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2
collector-emitter voltage 50 V collector current (DC) 100 mA peak collector current 200 mA
collector-emitter voltage 50 V output current (DC) 100 mA
MARKING
TYPE NUMBER MARKING CODE
PUMF12 R2
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
(1)
handbook, halfpage
132
Top view
56
4
MCE153
6
TR1
12 3
54
R1
Fig.1 Simplified outline (SOT363) and symbol.
R2
TR2
2002 Nov 07 2
Philips Semiconductors Product specification
PNP general purpose transistor;
PUMF12
NPN resistor-equipped transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
P
tot
T
stg
T
j
T
amb
TR1 (PNP)
V
CBO
V
CEO
V
EBO
I
C
I
CM
TR2 (NPN)
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
Per device
P
tot
total power dissipation T
25 °C; note 1 200 mW
amb
storage temperature range 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
collector-base voltage open emitter −−50 V collector-emitter voltage open base −−40 V emitter-base voltage open collector −−5V collector current (DC) −−100 mA peak collector current −−200 mA
collector-base voltage open emitter 50 V collector-emitter voltage open base 50 V emitter-base voltage open collector 10 V input voltage
positive +40 V
negative −−10 V output current (DC) 100 mA peak collector current 100 mA
total power dissipation T
25 °C; note 1 300 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Nov 07 3
Philips Semiconductors Product specification
PNP general purpose transistor;
PUMF12
NPN resistor-equipped transistor
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
TR1 (PNP)
I
CBO
I
EBO
V
CEsat
h
FE
C
c
f
T
TR2 (NPN)
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 15.4 22 28.6 k
R2
------­R1
C
c
collector cut-off current VCB= 30 V; IE=0 −−−100 nA
V
= 30 V; IE= 0; Tj= 150 °C −−−10 µA
CB
emitter cut-off current VEB= 4 V; IC=0 −−−100 nA saturation voltage IC= 50 mA; IB= 5 mA; note 1 −−−200 mV DC current gain VCE= 6 V; IC= 1 mA 120 −− collector capacitance VCB= 12 V; IE=ie= 0; f = 1 MHz −−2.2 pF transition frequency VCE= 12 V; IC= 2 mA; f = 100 MHz 100 −−MHz
collector-base cut-off current VCB=50V; IE=0 −−100 nA collector-emitter cut-off current VCE=30V; IB=0 −−1µA
V
=30V; IB= 0; Tj= 150 °C −−50 µA
CE
emitter-base cut-off current VEB=5V; IC=0 −−120 µA DC current gain VCE=5V; IC= 5 mA 80 −− saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV input off voltage VCE=5V; IC= 100 µA 0.9 0.5 V input on voltage VCE= 0.3 V; IC= 2 mA 2 1.1 V
resistor ratio 1.7 2.1 2.6
collector capacitance VCB=10V; IE=ie= 0; f = 1 MHz −−2.5 pF
Note
1. Device mounted on an FR4 printed-circuit board.
APPLICATION INFORMATION
R1
1
R
BE(ext)
R2
2
R
3
4
6
B(ext)
MHC322
handbook, halfpage
5
Fig.2 Typical power management circuit.
2002 Nov 07 4
Philips Semiconductors Product specification
PNP general purpose transistor;
PUMF12
NPN resistor-equipped transistor
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT363
D
y
56
4
E
H
E
AB
X
v M
A
pin 1 index
132
e
1
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
A
1.1
0.8
max
0.1
1
b
p
0.30
0.25
0.20
0.10
b
p
e
cD
2.2
1.8
A
wBM
0 1 2 mm
scale
E
1.35
1.15
e
1.3
e
1
0.65
H
E
2.2
2.0
0.45
0.15
A
1
detail X
L
Qywv
p
0.25
0.15
Q
c
L
p
0.2 0.10.2
OUTLINE VERSION
SOT363 SC-88
IEC JEDEC EIAJ
REFERENCES
2002 Nov 07 5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors Product specification
PNP general purpose transistor;
PUMF12
NPN resistor-equipped transistor
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For datasheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
DEFINITION
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or atanyother conditions above thosegivenin the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationor warranty that suchapplicationswillbe suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expectedto result in personal injury.Philips Semiconductorscustomersusing or selling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design and/or performance. When the productis infull production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Nov 07 6
Philips Semiconductors Product specification
PNP general purpose transistor; NPN resistor-equipped transistor
PUMF12
NOTES
2002 Nov 07 7
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Nov 07 Document order number: 9397 750 10311
SCA74
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