Philips PUMD9 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
MBD128
PUMD9
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 1999 Jan 07
1999 May 20
Philips Semiconductors Product specification
h
NPN/PNP resistor-equipped transistors PUMD9
FEATURES
• Transistors with different polarity and built-in bias
resistors R1 and R2 (typ. 10 kΩ and 47 kΩrespectively)
• No mutual interference between the transistors
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in portable
equipment
• Inverter circuit configurations without use of external
resistors.
andbook, halfpage
132
Top view
56
4
MAM343
654
R1 R2
TR1
R2
123
TR2
R1
DESCRIPTION
NPN/PNP resistor-equipped transistors in an SC-88
(SOT363) plastic package.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
MARKING
TYPE NUMBER MARKING CODE
PUMD9 Dt9
Fig.1 Simplified outline (SC-88) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
1999 May 20 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors PUMD9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−6V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Refer to SC-88 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Refer to SC-88 standard mounting conditions.
1999 May 20 3
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors PUMD9
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 7 10 13 kΩ
R2
------R1
C
c
collector cut-off current IC= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE= 30 V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−150 µA
DC current gain IC= 5 mA; VCE= 5 V 100 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
input-off voltage IC= 100 µA; VCE=5V − 0.7 0.5 V
input-on voltage IC= 1 mA; VCE= 0.3 V 1.4 0.8 − V
resistor ratio
3.7 4.7 5.7
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 (NPN) −−2.5 pF
TR2 (PNP) −−3pF
1999 May 20 4
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