Philips PUMD6 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

dbook, halfpage

MBD128

PUMD6

NPN/PNP resistor-equipped
transistor

Product specification
Supersedes data of 1997 Dec 15

1999 May 28

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistor PUMD6

FEATURES

• Transistors with different polarity, each with a built-in
bias resistor R1 (typ. 4.7 kΩ)

• No mutual interference between the transistors

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and
driver circuits

• Inverter circuit configurations without use of external
resistors.

DESCRIPTION

NPN/PNP resistor-equipped transistors in an SC-88
(SOT363) plastic package.

handbook, halfpage

4

56

132

Top view

MAM381

Fig.1 Simplified outline (SC-88; SOT363)

and symbol.

654

R1

TR1

123

TR2

R1

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

MARKING

TYPE NUMBER MARKING CODE

PUMD6 Dt6

1

2

MGA893 - 1

3

Fig.2 Equivalent inverter symbol.

1999 May 28 2

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistor PUMD6

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +40 V

negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 28 3