Philips psmn015-100p_100b Datasheet

1. Product profile

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

Rev. 05 — 14 January 2004 Product data

SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in each package.

■ Low on-state resistance ■ Avalanche ruggedness rated.

■ DC-to-DC converters ■ Switched-mode power supplies.

■ VDS≤ 100 V ■ ID≤ 75 A

■ P

≤ 300 W ■ R

tot

DSon

≤ 15 mΩ

2. Pinning information

Table 1: Pinning - SOT78, SOT404 simplified outlines and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb mounting base;

connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

[1]

12mb3

SOT78 (TO-220AB)

MBK106

mb

2

13

SOT404 (D

2

-PAK)

MBK116

MBB076

d

g

s

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

PSMN015-100P TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78

2

PSMN015-100B D

-PAK Plastic single-ended surface mounted package; 3 leads (1 lead cropped) SOT404

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

DS(AL)S

drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 100 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 175 °C; RGS=20kΩ - 100 V
gate-source voltage (DC) - ±20 V
drain current (DC) Tmb=25°C; VGS=10V;Figure 2 and 3 -75A

= 100 °C; VGS=10V;Figure 2 - 60.8 A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 240 A
total power dissipation Tmb=25°C; Figure 1 - 300 W
storage temperature −55 +175 °C
junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C - 75 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 240 A

non-repetitive drain-source
avalanche energy

unclamped inductive load; ID=36A;

= 0.11 ms; VDD≤ 50 V; RGS=50Ω;

t

p

= 10 V; starting Tj=25°C

V

GS

- 320 mJ

9397 750 12543

Product data Rev. 05 — 14 January 2004 2 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

03aa16

Tmb (°C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

03an67

Tmb(°C)

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03am53

I

D

(A)

2

10

10

1

1 10 10

Limit R

DSon

= V

DS

/I

D

DC

tp = 10 µs

100 µs

1 ms

10 ms

2

VDS (V)

Tmb=25°C; IDMis single pulse; VGS=10V.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

10

3

9397 750 12543

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 05 — 14 January 2004 3 of 13

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting base Figure 4 - - 0.5 K/W
thermal resistance from junction to ambient

SOT78 vertical in still air - 60 - K/W
SOT404 mounted on a printed-circuit board;

- 50 - K/W

minimum footprint; vertical in still air

5.1 Transient thermal impedance

03am52

δ =

p

T

tp (s)

Z

th(j-mb)

(K/W)

10

1

10

10

10

= 0.5

δ

-1

0.2

0.1

0.05

0.02

-2
single pulse

-3

-5

10

-4

10

-3

10

-2

10

P

t

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

t

p

T

t

-1

10

9397 750 12543

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 05 — 14 January 2004 4 of 13

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS=0V

=25°C 100 - - V

T

j

= −55 °C 89--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 234V

T

j

= 175 °C 1--V

T

j

= −55 °C - - 4.4 V

T

j

drain-source leakage current VDS= 100 V; VGS=0V

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

T

j

gate-source leakage current VGS= ±20 V; VDS= 0 V - 2 100 nA
drain-source on-state resistance VGS= 10 V; ID=25A;Figure 7 and 8

=25°C - 12 15 mΩ

T

j

= 175 °C - 32.4 40.5 mΩ

T

j

total gate charge ID= 75 A; VDD=80V; VGS=10V;Figure 13 -90-nC
gate-source charge - 20 - nC
gate-drain (Miller) charge - 35 - nC
input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 -4900-pF
output capacitance - 390 - pF
reverse transfer capacitance - 220 - pF
turn-on delay time VDD=50V; RL= 1.8 Ω;

=10V;RG= 5.6 Ω

V

rise time -65-ns

GS

-25-ns

turn-off delay time - 95 - ns
fall time -50-ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.8 1.1 V
reverse recovery time IS= 20 A; dIS/dt = −100 A/µs; VGS=0V - 80 - ns
recovered charge - 115 - nC

9397 750 12543

Product data Rev. 05 — 14 January 2004 5 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

50

I

Tj = 25 °C

D

(A)

40

30

20

10

0

0 0.2 0.4 0.6 0.8 1

10 V

03am54

5.4 V5.6 V6 V

5.2 V

5 V

4.8 V

4.6 V

4.4 V

VGS = 4.2 V

VDS (V)

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

03am55

5.2 V

R

(mΩ)

30

DSon

Tj = 25 °C

VGS = 5 V

80

VDS > ID x R

I

D

(A)

60

40

20

0

0246

=25°C and 175 °C; VDS> IDxR

j

DSon

175 °C

DSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

3

a

2.5

03am56

Tj = 25 °C

VGS (V)

03al21

20

10

0

0 1020304050

5.4 V

5.6 V
6 V

10 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

2

1.5

1

0.5

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 12543

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 05 — 14 January 2004 6 of 13

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

03aa32

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

4

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0246

03aa35

maxtypmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03am58

C

iss

3

10

C

oss

C

rss

2

10

-1

10

1 10 10

VDS (V)

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 12543

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 05 — 14 January 2004 7 of 13

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

100

VGS = 0 V

I

S

(A)

75

50

25

175 °C

0

0 0.3 0.6 0.9 1.2

Tj = 25 °C

03am57

VSD (V)

10

ID = 75 A

V

GS

(V)

T

= 25 °C VDD = 20 V

j

8

6

4

2

0

0 25 50 75 100

Tj=25°C and 175 °C; VGS=0V ID= 75 A; VDD= 20 V and 80 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

03am59

80 V

QG (nC)

9397 750 12543

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 05 — 14 January 2004 8 of 13

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

00-09-07
01-02-16

Fig 14. SOT78 (TO-220AB).

9397 750 12543

Product data Rev. 05 — 14 January 2004 9 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

A

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-02-12

Fig 15. SOT404 (D2-PAK).

9397 750 12543

Product data Rev. 05 — 14 January 2004 10 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

8. Revision history

Table 6: Revision history

Rev Date CPCN Description

05 20040114 HZG463a Product data (9397 750 12543); supersedes Product specification

PSMN015-100P, PSMN015-100B Rev 1.200 of June 2003

Modifications:

• The format of this data sheet has been redesigned to comply with the new presentation

and information standards of Philips Semiconductors.

• Section 1.4 “Quick reference data” and Section 4 “Limiting values” V

• Section 4 “Limiting values” W

• Section 4 “Limiting values” modification to E

• Section 4 “Limiting values” Figure 3 graph modified.

• Section 5 “Thermal characteristics” Figure 4 graph modified.

• Section 6 “Characteristics” V

• Section 6 “Characteristics” Q

values modified.

• Section 6 “Characteristics” Figure 5, 6, 7, 8, 11, 12 and 13 modified.

changed to E

DSS

DS(AL)S

correction to an error in Tj= −55 °C max limit.

GS(TO)

, C

g(tot), Qgd

iss

, C

oss

DS(AL)S

.

, C

rss,tdon

.

, tr, t

changed to VDS.

DSS

, tf, trr and Qr typical

doff

9397 750 12543

Product data Rev. 05 — 14 January 2004 11 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

Philips Semiconductors

9. Data sheet status

PSMN015-100P/100B

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

N-channel TrenchMOS™ Standard level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification Thisdata sheet containsdatafrom the preliminary specification.Supplementary data will bepublished

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation orwarranty that such applications willbesuitable for
the specified use without further testing or modification.

[2][3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a laterdate. Philips Semiconductors reserves theright to changethe specification without notice, in
order to improve the design and supply the best possible product.

right to makechangesat any time in order toimprove the design, manufacturingandsupply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations or warrantiesthat these productsare
free frompatent, copyright, ormaskwork right infringement, unlessotherwise
specified.

12. Trademarks

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

SiliconMAX — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

9397 750 12543

9397 750 12543

Product data Rev. 05 — 14 January 2004 12 of 13

Product data Rev. 05 — 14 January 2004 12 of 13

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PSMN015-100P/100B

N-channel TrenchMOS™ Standard level FET

© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 14 January 2004 Document order number: 9397 750 12543