Philips psmn013-100ps Datasheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide ran ge of industrial, communications and domestic
equipment.

1.2 Features and benefits

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Rev. 02 — 22 January 2010 Product data sheet

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters
 Load switching

 Motor control
 Server power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

T

j

Avalanche ruggedness

E

DS(AL)S

Dynamic characteristics

Q

GD

Q

G(tot)

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 100 V
drain current Tmb=25°C; VGS=10V;

see Figure 1

total power
dissipation

junction temperature -55 - 175 °C

non-repetitive
drain-source
avalanche energy

gate-drain charge VGS=10V; ID=25A;

total gate charge VGS=10V; ID=25A;

Tmb= 25 °C; see Figure 2 - - 170 W

VGS=10V; T

=68A; V

I

D

unclamped; RGS=50Ω

VDS= 50 V; see Figure 15
and 14

VDS= 50 V; see Figure 14
and 15

j(init)

≤ 100 V;

sup

=25°C;

--68A

- - 127 mJ

-17-nC

-59-nC

NXP Semiconductors

12mb3

S

D

G

mbb076

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Table 1. Quick reference

…continued

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

R

DSon

drain-source
on-state resistance

VGS=10V; ID=15A;

= 100 °C; see Figure 12

T

j

V

=10V; ID=15A;

GS

= 25 °C; see Figure 13

T

j

--25mΩ

- 10.8 13.9 mΩ

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate
2D drain
3S source
mb D mounting base; connected to

drain

SOT78 (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

PSMN013-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

Name Description Version

TO-220AB

SOT78

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 2 of 14

NXP Semiconductors

003aac512

0

20

40

60

80

0 50 100 150 200

T

mb

(°C)

I

D

(A)

Tmb (°C)

0 20015050 100

03aa16

40

80

120

P

der

(%)

0

4. Limiting values

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

T

sld(M)

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 100 V
drain-gate voltage Tj≤ 175 °C; Tj≥ 25 °C; RGS=20kΩ -100V
gate-source voltage -20 20 V
drain current VGS=10V; Tmb= 100 °C; see Figure 1 -47A

=10V; Tmb=25°C; see Figure 1 -68A

V

GS

peak drain current tp≤ 10 µs; pulsed; Tmb=25°C; see Figure 3 -272A
total power dissipation Tmb=25°C; see Figure 2 -170W
storage temperature -55 175 °C
junction temperature -55 175 °C
peak soldering

-260°C

temperature

source current Tmb=25°C - 68 A
peak source current tp≤ 10 µs; pulsed; Tmb=25°C - 272 A

non-repetitive
drain-source avalanche

VGS=10V; T
unclamped; R

=25°C; ID=68A; V

j(init)

=50Ω

GS

≤ 100 V;

sup

-127mJ

energy

Fig 1. Continuous drain current as a function of

mounting base temperature

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 3 of 14

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

NXP Semiconductors

003aae168

10

−1

1

10

10

2

10

3

1 10 10

2

10

3

VDS (V)

I

D

(A)

Limit R

DSon

= VDS / I

D

DC

10 ms

1 ms

tp =10 μs

100 μs

100 ms

003aa d575

10

-4

10

-3

10

-2

10

-1

1

1e-6 10

-5

10

-4

10

-3

10

-2

10

-1

1 10

t

p

(s)

Z

th (j-m b )

(K/W)

single shot

0.02

0.05

0.1

0.2

δ

= 0.5

t

p

T

P

t

t

p

T

δ =

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Fig 3. Safe operating area; continuous and peak drain cur rents as a function of drain-source voltage

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from
junction to mounting
base

R

th(j-a)

thermal resistance from
junction to ambient

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical

values

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 4 of 14

see Figure 4 - 0.5 0.9 K/W

vertical in free air - 60 - K/W

NXP Semiconductors

6. Characteristics

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

drain-source
breakdown voltage

gate-source threshold
voltage

ID=0.25mA; VGS=0V; Tj=-55°C 90 - - V

=0.25mA; VGS=0V; Tj=25°C 100 - - V

I

D

ID=1mA; VDS = VGS; Tj= 175 °C; see

1- -V

Figure 10

=1mA; VDS = VGS; Tj=25°C; see

I

D

Figure 10

I

D

and 11

=1mA; VDS = VGS; Tj=-55°C; see

234V

--4.6V

Figure 10

I

DSS

I

GSS

R

DSon

drain leakage current VDS=100V; VGS=0V; Tj= 125 °C - - 100 µA

=100V; VGS=0V; Tj= 25 °C - 0.06 2 µA

V

DS

gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - 10 100 nA

=-20V; VDS=0V; Tj= 25 °C - 10 100 nA

V

GS

drain-source on-state
resistance

VGS=10V; ID=15A; Tj= 100 °C; see

Figure 12

=10V; ID=15A; Tj= 175 °C; see

V

GS

--25mΩ

- 29.5 38.9 mΩ

Figure 12

V

=10V; ID=15A; Tj=25°C; see

GS

- 10.8 13.9 mΩ

Figure 13

R

G

internal gate resistance

f=1MHz - 1 - Ω

(AC)

Dynamic characteristi cs

Q

Q

G(tot)

GS

total gate charge ID=25A; VDS=50V; VGS=10V; see

Figure 14

I

D

and 15

=0A; VDS=0V; VGS= 10 V - 47.6 - nC

gate-source charge ID=25A; VDS=50V; VGS=10V; see

-59-nC

- 13.8 - nC

Figure 14 and 15

Q

GS(th)

Q

GS(th-pl)

pre-threshold
gate-source charge

post-threshold

ID=25A; VDS=50V; VGS=10V; see

Figure 15

-9.2-nC

-4.6-nC

gate-source charge

Q

GD

gate-drain charge ID=25A; VDS=50V; VGS=10V; see

-17-nC

Figure 15 and 14

V

GS(pl)

gate-source plateau

VDS=50V; see Figure 15 and 14 -4.4-V

voltage

C

iss

C

oss

C

rss

input capacitance VDS=50V; VGS= 0 V; f = 1 MHz;
output capacitance - 221 - pF

Tj=25°C; see Figure 16

reverse transfer

- 3195 - pF

- 136 - pF

capacitance

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 5 of 14

NXP Semiconductors

003aa d577

0

40

80

120

160

200

01234

V

DS

(V)

I

D

(A)

6

10

5

4.5

5.5

VGS (V) = 4

20

003aa d580

1000

2000

3000

4000

5000

0246810

V

GS

(V)

C

(pF)

C

iss

C

rss

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Table 6. Characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

t

d(on)

t

r

t

d(off)

t

f

turn-on delay time VDS=50V; RL=2Ω; VGS=10V;

=4.7Ω; Tj=25°C

R

rise time - 25 - ns

G(ext)

turn-off delay time - 52.5 - ns
fall time - 24 - ns

- 20.7 - ns

Source-drain diode

V

SD

source-drain voltage IS=15A; VGS=0V; Tj= 25 °C; see

- 0.85 1.2 V

Figure 17

t

rr

Q

r

reverse recovery time IS=25A; dIS/dt = 100 A/µs; VGS=0V;

=50V

V

recovered charge - 109 - nC

DS

-52-ns

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 6 of 14

Fig 6. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

NXP Semiconductors

003aa d585

5

15

25

35

45

4 8 12 16 20

V

GS

(V)

R

DSon

(mΩ)

003aa d586

0

30

60

90

120

150

0 30 60 90 120 150

I

D

(A)

g

fs

(S)

003aa d582

0

20

40

60

80

100

0246

V

GS

(V)

I

D

(A)

Tj = 175 °C

25 °C

Tj (°C)

−60 180120060

003aad280

2

3

1

4

5

V

GS(th)

(V)

0

max

typ

min

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8. Forward transconductance as a function of

drain current; typical values

Fig 10. G ate-source threshold voltage as a function of

junction temperature

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 7 of 14

NXP Semiconductors

03aa35

VGS (V)

0642

10

−4

10

−5

10

−2

10

−3

10

−1

I

D

(A)

10

−6

min typ max

003aad774

0

0.8

1.6

2.4

3.2

-60 0 60 120 180
T

j

(°C)

a

003aad578

10

15

20

25

30

0 20406080

I

D

(A)

R

DSon

(mΩ)

6

10

VGS (V) = 4.5

20

5

003aa d583

0

2

4

6

8

10

0 15304560

Q

G

(nC)

V

GS

(V)

VDS = 50V

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Fig 12. Normalized d rain-so urce on-state resistance

factor as a function of junction temperature

Fig 13. Drain-source on-state resist ance as a function

of drain current; typical values

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 8 of 14

Fig 14. Gate-source voltage as a function of gate

charge; typical values

NXP Semiconductors

003aaa508

V

GS

V

GS(th)

Q

GS1QGS2

Q

GD

V

DS

Q

G(tot)

I

D

Q

GS

V

GS(pl)

003aad581

10

10

2

10

3

10

4

10

−2

10

−1

1

10

10

2

VDS (V)

C

(pF)

C

iss

C

rss

C

oss

003aa d584

0

20

40

60

80

100

0 0.3 0.6 0.9 1.2

V

SD

(V)

I

S

(A)

25 °C

Tj = 175 °C

Fig 15. Gate charge waveform definitions

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 9 of 14

NXP Semiconductors

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23
08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm

4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

A

1

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b

1

(2)

1.6

1.0

c D

1.3

1.0

b

2

(2)

D1E e

2.54

L L

1

(1)

L

2

(1)

max.

3.0

p q

3.0

2.7

Q

2.6

2.2

D

D

1

q

p

L

123

L

1

(1)

b

1

(2)

(3×)

b

2

(2)

(2×)

e

e

b(3×)

AE

A

1

c

Q

L

2

(1)

mounting

base

7. Package outline

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Fig 18. Package outline SOT78 (TO-220AB)

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 10 of 14

NXP Semiconductors

8. Revision history

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN013-100PS_2 20100122 Product data sheet - PSMN013-100PS_1
Modifications:
PSMN013-100PS_1 20090917 Objective data sheet - -

• Data sheet status changed from Objective to Product.

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 11 of 14

NXP Semiconductors

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred t o as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a def ault of t he Application and the
product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

, unless otherwise

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 12 of 14

NXP Semiconductors

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior
authorization from national authorities.

Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that t he product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testin g o r ap plication requ iremen t s.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applicati ons. In
the event that customer uses the product for design-in and use in automot ive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever

customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 22 January 2010 13 of 14

NXP Semiconductors

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

PSMN013-100PS

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 22 January 2010

Document identifier: PSMN013-100PS_2