Philips psmn004 DATASHEETS
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN004-55W
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology V
d
= 55 V
DSS
• Very low on-state resistance
• Fast switching I
= 100 A
D
• Low thermal resistance
• Logic level compatible R
g
s
R
R
≤ 4.2 mΩ (VGS = 10 V)
DS(ON)
≤ 4.5 mΩ (VGS = 5 V)
DS(ON)
≤ 5 mΩ (VGS = 4.5 V)
DS(ON)
GENERAL DESCRIPTION PINNING SOT429 (TO247)
SiliconMAXproductsusethelatest PIN DESCRIPTION
Philips Trench technology to
achieve the lowest possible 1 gate
on-state resistance in each
package at each voltage rating. 2 drain
Applications:- 3 source
• d.c. to d.c. converters
• switched mode power supplies tab drain
The PSMN004-55W is supplied in
the SOT429 (TO247) conventional
leaded package.
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
Tj, T
1 Maximum continuous current limited by package.
Drain-source voltage Tj = 25 ˚C to 175˚C - 55 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ -55V
Continuous gate-source - ± 15 V
voltage
Peak pulsed gate-source Tj ≤ 150 ˚C - ± 20 V
voltage
Continuous drain current Tmb = 25 ˚C; VGS = 5 V - 100
Tmb = 100 ˚C; VGS = 5 V - 100
1
1
Pulsed drain current Tmb = 25 ˚C - 300 A
Total power dissipation Tmb = 25 ˚C - 300 W
Operating junction and - 55 175 ˚C
stg
storage temperature
A
A
October 1999 1 Rev 1.100
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN004-55W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 100 A; - 357 mJ
energy tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; refer to
fig:15
Non-repetitive avalanche - 100 A
current
Thermal resistance junction - - 0.5 K/W
to mounting base
Thermal resistance junction in free air - 45 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 42 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2 V
Tj = 175˚C 0.5 - - V
Tj = -55˚C - - 2.3 V
Drain-source on-state VGS = 10 V; ID = 25 A - 3.2 4.2 mΩ
resistance VGS = 5 V; ID = 25 A - 3.6 4.5 mΩ
VGS = 4.5 V; ID = 25 A - 3.8 5 mΩ
VGS = 5 V; ID = 25 A; Tj = 175˚C - 6.2 9.5 mΩ
Gate-source leakage current VGS = ±10 V; VDS = 0 V; - 0.02 100 nA
Zero gate voltage drain VDS = 55 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Total gate charge ID = 100 A; V
= 44 V; VGS = 5 V - 226 - nC
DD
Gate-source charge - 36 - nC
Gate-drain (Miller) charge - 106 - nC
Turn-on delay time VDD = 30 V; RD = 1.2 Ω; - 26 - ns
Turn-on rise time VGS = 10 V; RG = 5.6 Ω - 118 - ns
Turn-off delay time Resistive load - 848 - ns
Turn-off fall time - 336 - ns
Internal drain inductance Measured tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 13 - nF
Output capacitance - 1900 - pF
Feedback capacitance - 1250 - pF
October 1999 2 Rev 1.100
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN004-55W
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 100 A
(body diode)
Pulsed source current (body - - 300 A
diode)
Diode forward voltage IF = 25 A; VGS = 0 V - 0.78 1.2 V
IF = 75 A; VGS = 0 V - 0.92 Reverse recovery time IF = 20 A; -dIF/dt = 100 A/µs; - 150 - ns
Reverse recovery charge VGS = -10 V; VR = 20 V - 0.7 - µC
October 1999 3 Rev 1.100
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