Philips PRLL5817, PRLL5818, PRLL5819 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
page
M3D121
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed glass SMD
package.
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
• Polarity protection.
handbook, halfpage
Fig.1 Simplified outline (SOD87) and symbol.
ka
MAM190
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
PRLL5817 817 PH
PRLL5818 818 PH
PRLL5819 819 PH
1996 May 03 2
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RSM
V
RRM
V
RWM
I
F(AV)
I
FSM
T
stg
T
j
continuous reverse voltage
PRLL5817
PRLL5818
PRLL5819
non-repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
crest working reverse voltage
PRLL5817
PRLL5818
PRLL5819
average forward current T
=60°C −
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
prior to surge: VR=0
j max
storage temperature
junction temperature
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
20 V
30 V
40 V
24 V
36 V
48 V
20 V
30 V
40 V
20 V
30 V
40 V
1A
25 A
+175 °C
125 °C
1996 May 03 3
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