Philips prf947 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D102

PRF947

UHF wideband transistor

Product specification
Supersedes data of 1999 Mar 01

1999 Jul 23

Philips Semiconductors Product specification

UHF wideband transistor PRF947

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT323
package. Thetransistor is primarily intended for wideband
applicationsin the GHz-range in theRFfrontend of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

Marking code: V0.

3

1

1

2

MAM062

Fig.1 Simplified outline (SOT323) and symbol.

3

2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

f

T

G

UM

NF noise figure Γ

feedback capacitance IC= 0; VCB=6V; f=1MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
maximum unilateral power gain IC= 15 mA; VCE=6V;

T

=25°C; f = 1 GHz

amb

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 16 − dB

− 1.5 − dB

f = 1 GHz
P
R

tot
th j-s

total power dissipation Ts=60°C; note 1 −−250 mW
thermal resistance from junction

P

= 250 mW −−460 K/W

tot

to soldering point

Note

1. Ts is the temperature at the soldering point of the collector pin.

1999 Jul 23 2

Philips Semiconductors Product specification

UHF wideband transistor PRF947

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
DC collector current − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 250 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction

P

= 250 mW; Ts=60°C; note 1 460 K/W

tot

to soldering point

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1999 Jul 23 3

Philips Semiconductors Product specification

UHF wideband transistor PRF947

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

AC characteristics

C

re

f

T

2

|s

|

21

G

UM

NF noise figure Γ

collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown

IC= 100 µA; IB=0 10 −−V

voltage
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB= 10 V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200

= 15 mA; VCE=6V − 100 −

I

C

feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
insertion gain IC= 15 mA; VCE=6V; f=1GHz − 14.5 − dB
maximum unilateral power gain;

note 1

IC= 15 mA; VCE=6V;
T

=25°C; f = 1 GHz

amb

= 15 mA; VCE=6V;

I

C

T

=25°C; f = 2 GHz

amb

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 16 − dB

− 10 − dB

− 1.5 − dB

f = 1 GHz

Γ

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 2.1 − dB

f = 2 GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

1999 Jul 23 4

2

s

G

UM

10

-------------------------------------------------------­1s

21

2

–()1s

11

–()

dBlog=

2

22

Philips Semiconductors Product specification

UHF wideband transistor PRF947

150

Ts (

MGS496

°C)

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

Fig.2 Power derating as a function of soldering

point temperature.

120

handbook, halfpage

h

FE

80

40

0

0

VCE=6V.

10 50

20 30 40

MGS497

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

0.5

handbook, halfpage

C

re

(pF)

0.4

0.3

0.2

0.1

0

04 12

IC=Ic= 0; f = 1 MHz.

8

MGS498

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

1999 Jul 23 5

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

01020 40

VCE= 6 V; fm= 1 GHz; T

amb

=25°C.

30

Fig.5 Transition frequency as a function of

collector current; typical values.

MGS499

IC (mA)

Philips Semiconductors Product specification

UHF wideband transistor PRF947

20

handbook, halfpage

gain
(dB)

16

12

f = 1 GHz; VCE=6V.

MSG

G

8

4

0

01020 40

UM

G

max

30

IC (mA)

Fig.6 Gain as a function of collector current;

typical values.

MGS500

50

handbook, halfpage

gain
(dB)

40

G

UM

30

MSG

20

G

10

0

2

10

IC= 5 mA; VCE=6V.

10

max

3

f (MHz)

Fig.7 Gain as a function of frequency; typical

values.

MGS501

4

10

50

handbook, halfpage

gain
(dB)

40

G

UM

30

MSG

20

G

10

0

2

10

IC= 15 mA; VCE=6V.

10

max

3

f (MHz)

Fig.8 Gain as a function of frequency; typical

values.

MGR502

f (MHz)

MGS503

4

10

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

4

10

IC= 30 mA; VCE=6V.

2

10

MSG

G

UM

G

max

3

10

Fig.9 Gain as a function of frequency; typical

values.

1999 Jul 23 6

Philips Semiconductors Product specification

UHF wideband transistor PRF947

handbook, halfpage

4

NF

(dB)

3

(1)

2

1

0
10

(2)
(3)
(4)

(5)
(6)

−1

11010

I

(mA)

C

VCE=6V.
(1) f = 2 GHz
(2) f = 1.5 GHz
(3) f = 1 GHz

(4) f = 900 MHz
(5) f = 800 MHz
(6) f = 500 MHz.

Fig.10 Minimum noise figure as a function of

collector current; typical values.

MGS504

2

NF

(dB)

4

(1)

handbook, halfpage

3

(2)

2

(3)

1

0

2

10

3

10

f (MHz)

VCE=6V.
(1) IC=30mA
(2) IC=15mA
(3) IC= 5 mA.

Fig.11 Minimum noise figure as a function of

frequency; typical values.

MGS505

4

10

1999 Jul 23 7

Philips Semiconductors Product specification

UHF wideband transistor PRF947

handbook, full pagewidth

f = 1 GHz; VCE= 6 V; IC= 5 mA;

=50Ω.

Z

o

(1) G = 17 dB
(2) G = 16 dB
(3) G = 15 dB
(4) NF = 1.6 dB
(5) NF = 1.8 dB
(6) NF = 2 dB.

Fig.12 Common emitter available gain, noise and stability circles; typical values.

180

unstable region

source

135°

+0.5

90°

+1

unstable

region load

+2

45°

1.0

0.8

0.6

+0.2

(1)

°

0

0.5 1

(2)

(3)

−0.2

−0.5

−135°

2 5

(5)

(6)

Γopt

(4)

−2

+5

−5

−45°

0.4

0.2

0°

0

−1

1.0

−90°

MGS506

handbook, full pagewidth

f = 2 GHz; VCE= 6 V; IC= 5 mA;

=50Ω.

Z

o

(1) G

max

= 10.9 dB
(2) G = 10 dB
(3) G=9dB
(4) G=8dB
(5) NF = 2.1 dB
(6) NF = 2.3 dB
(7) NF = 2.5 dB.

Fig.13 Common emitter available gain, noise and stability circles; typical values.

unstable region

source

°

180

0

135°

+0.2

−0.2

−135°

0.2

+0.5

(1)

−0.5

+2

unstable

region load

45°

1.0

0.8

90°

+1

0.6

Γopt

+5

0.5

(2)

(3)

(4)

1

(5)

(6)

(7)

2

5

−5

−2

−45°

0.4

0.2

0°

0

−1

1.0

−90°

MGS507

1999 Jul 23 8

Philips Semiconductors Product specification

UHF wideband transistor PRF947

APPLICATION INFORMATION
SPICE parameters for the PRF947 die.

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 0.466 fA
2 BF 150.4 −
3 NF 1.000 −
4 VAF 53.06 V
5 IKF 180.0 mA
6 ISE 57.30 fA
7 NE 2.000 −
8 BR 27.68 −
9 NR 1.000 −
10 VAR 1.976 V
11 IKR 9.943 mA
12 ISC 1.420 aA
13 NC 1.000 −
14 RB 12.14 Ω
15 IRB 0.000 µA
16 RBM 4.957 Ω
17 RE 0.597 Ω
18 RC 1.988 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 0.568 pF
23 VJE 600.0 mV
24 MJE 0.412 −
25 TF 2.037 ps
26 XTF 30.90 −
27 VTF 3.148 V
28 ITF 131.8 mA
29 PTF 0.000 deg
30 CJC 205.8 fF
31 VJC 296.2 mV
32 MJC 0.118 −
33 XCJC 0.104 −
34 TR 0.000 ps

(1)

35
36
37

(1)
(1)

CJS 0.000 F

VJS 700.0 mV

MJS 0.000 −
38 FC 0.943 −

(2)

39

C

bpb

83.00 fF

SEQUENCE No. PARAMETER VALUE UNIT

(2)

40

C

bpe

84.00 fF
41 AF 1.000 −
42 KF 4 x 10

−16

−

Notes

1. These parameters have not been extracted, the
default values are shown.

, C

2. C

bpb

: base-bondpad and emitter-bondpad

bpe

capacitance to collector.

handbook, halfpage

L1 L2

B

C

be ce

QLB= 50; QLE= 50;

(f) = QLB√(f/fc);

QL

B

(f) = QLE√(f/fc);

QL

E

= corner frequency = 1 GHz.

f

c

L

C

cb

B

E'

L

E

L3

E

C

MBC964

Fig.14 Package equivalent circuit SOT323.

List of components (see Fig.14)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

2fF
100 fF

100 fF
L1 0.34 nH
L2 0.10 nH
L3 0.34 nH
L

B

L

E

0.60 nH

0.60 nH

CB' C'

1999 Jul 23 9

Philips Semiconductors Product specification

UHF wideband transistor PRF947

handbook, full pagewidth

VCE= 6 V; IC= 15 mA; Zo=50Ω.

90°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180°

135°

+0.5

+0.2

0.2 0.5 1

0

−0.2

−135°

−0.5

3 GHz

500 MHz

+1

2 GHz

1 GHz

−1

−90°

200 MHz

2

100 MHz

+2

−2

45°

+5

5

−5

−45°

MGS508

Fig.15 Common emitter input reflection coefficient (s11); typical values.

handbook, full pagewidth

VCE= 6 V; IC=15mA.

90°

135°

100 MHz

180

°

50 40 30 20 10

−135°

200 MHz

500 MHz

1 GHz
2 GHz
3 GHz

−90°

45°

0°

−45°

MGS509

Fig.16 Common emitter forward transmission coefficient (s21); typical values.

1999 Jul 23 10

Philips Semiconductors Product specification

UHF wideband transistor PRF947

handbook, full pagewidth

VCE= 6 V; IC=15mA.

90°

135°

180

°

0.5 0.4 0.3 0.2 0.1

−135°

3 GHz

2 GHz

1 GHz

500 MHz
200 MHz
100 MHz

−90°

45°

0°

−45°

MGS510

Fig.17 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

VCE= 6 V; IC= 15 mA; Zo=50Ω.

90

°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180

+1

135°

+0.5

+0.2

°

0.2 0.5 1

0

−0.2

−135°

−0.5

−1

−90°

2

1 GHz

2 GHz

3 GHz

+2

5

500 MHz

200 MHz

−2

45°

+5

100 MHz

−5

−45°

MGS511

Fig.18 Common emitter output reflection coefficient (s22); typical values.

1999 Jul 23 11

Philips Semiconductors Product specification

UHF wideband transistor PRF947

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

L

p

X

v M

A

Q

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

mm

A

1.1

0.8

OUTLINE
VERSION

SOT323 SC-70

1999 Jul 23 12

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

UHF wideband transistor PRF947

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jul 23 13

Philips Semiconductors Product specification

UHF wideband transistor PRF947

NOTES

1999 Jul 23 14

Philips Semiconductors Product specification

UHF wideband transistor PRF947

NOTES

1999 Jul 23 15

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1999

Internet: http://www.semiconductors.philips.com

67

SCA

Printed in The Netherlands 125006/03/pp16 Date of release: 1999 Jul 23 Document order number: 9397 750 06131